Article Versions Notes

Ben Messaoud J, Michaud J-F, Certon D, Camarda M, Piluso N, Colin L, Barcella F, Alquier D. Investigation of the Young’s Modulus and the Residual Stress of 4H-SiC Circular Membranes on 4H-SiC Substrates. Micromachines. 2019; 10(12):801. https://doi.org/10.3390/mi10120801

Ben Messaoud, Jaweb, Jean-François Michaud, Dominique Certon, Massimo Camarda, Nicolò Piluso, Laurent Colin, Flavien Barcella, and Daniel Alquier. 2019. "Investigation of the Young’s Modulus and the Residual Stress of 4H-SiC Circular Membranes on 4H-SiC Substrates" Micromachines 10, no. 12: 801. https://doi.org/10.3390/mi10120801

Ben Messaoud, J., Michaud, J. -F., Certon, D., Camarda, M., Piluso, N., Colin, L., Barcella, F., & Alquier, D. (2019). Investigation of the Young’s Modulus and the Residual Stress of 4H-SiC Circular Membranes on 4H-SiC Substrates. Micromachines, 10(12), 801. https://doi.org/10.3390/mi10120801