Li, J.; Meng, C.; Yu, L.; Li, Y.; Yan, F.; Han, P.; Ji, X.
Effect of Various Defects on 4H-SiC Schottky Diode Performance and Its Relation to Epitaxial Growth Conditions. Micromachines 2020, 11, 609.
https://doi.org/10.3390/mi11060609
AMA Style
Li J, Meng C, Yu L, Li Y, Yan F, Han P, Ji X.
Effect of Various Defects on 4H-SiC Schottky Diode Performance and Its Relation to Epitaxial Growth Conditions. Micromachines. 2020; 11(6):609.
https://doi.org/10.3390/mi11060609
Chicago/Turabian Style
Li, Jinlan, Chenxu Meng, Le Yu, Yun Li, Feng Yan, Ping Han, and Xiaoli Ji.
2020. "Effect of Various Defects on 4H-SiC Schottky Diode Performance and Its Relation to Epitaxial Growth Conditions" Micromachines 11, no. 6: 609.
https://doi.org/10.3390/mi11060609
APA Style
Li, J., Meng, C., Yu, L., Li, Y., Yan, F., Han, P., & Ji, X.
(2020). Effect of Various Defects on 4H-SiC Schottky Diode Performance and Its Relation to Epitaxial Growth Conditions. Micromachines, 11(6), 609.
https://doi.org/10.3390/mi11060609