Wu, J.; Yang, X.; Wang, F.; Guo, Z.; Fan, Z.; He, Z.; Yang, F.
Characteristics of Activation Rate and Damage of Ion-Implanted Phosphorous in 4H-SiC after Different Annealing by Optical Absorption. Micromachines 2022, 13, 804.
https://doi.org/10.3390/mi13050804
AMA Style
Wu J, Yang X, Wang F, Guo Z, Fan Z, He Z, Yang F.
Characteristics of Activation Rate and Damage of Ion-Implanted Phosphorous in 4H-SiC after Different Annealing by Optical Absorption. Micromachines. 2022; 13(5):804.
https://doi.org/10.3390/mi13050804
Chicago/Turabian Style
Wu, Jingmin, Xiang Yang, Fengxuan Wang, Zhiyu Guo, Zhongchao Fan, Zhi He, and Fuhua Yang.
2022. "Characteristics of Activation Rate and Damage of Ion-Implanted Phosphorous in 4H-SiC after Different Annealing by Optical Absorption" Micromachines 13, no. 5: 804.
https://doi.org/10.3390/mi13050804
APA Style
Wu, J., Yang, X., Wang, F., Guo, Z., Fan, Z., He, Z., & Yang, F.
(2022). Characteristics of Activation Rate and Damage of Ion-Implanted Phosphorous in 4H-SiC after Different Annealing by Optical Absorption. Micromachines, 13(5), 804.
https://doi.org/10.3390/mi13050804
