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Journal: Micromachines, 2022
Volume: 13
Number: 804
804
Article: Characteristics of Activation Rate and Damage of Ion-Implanted Phosphorous in 4H-SiC after Different Annealing by Optical Absorption
Authors: by Jingmin Wu, Xiang Yang, Fengxuan Wang, Zhiyu Guo, Zhongchao Fan, Zhi He and Fuhua Yang
Link: https://www.mdpi.com/2072-666X/13/5/804

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