Characteristics of Activation Rate and Damage of Ion-Implanted Phosphorous in 4H-SiC after Different Annealing by Optical Absorption

Round 1

Reviewer 1 Report

This paper provides a convenient, non-destructive technique to monitor the depth of ion implantation damage layer. The thickness of the ion-implanted damage layer is monitored using an ellipsometer with optical sensitivity, and compared to standard SIMS measurements.

In addition, the damage caused by ion implantation and the electrical activation after annealing are investigated by means of optical absorption. The conclusions are supported by the experimental results of the specific contact resistance obtained by CTLM. The path of the experiment and the conclusions drawn look quite logical.

These methods can quickly evaluate the stability of ion implantation and activation annealing during the fabrication of SiC devices, effectively assisting in improving the level of semiconductor fabrication processes. I believe this work has a practical interest.

Meanwhile, I have one question, there is a clarification that needs to be addressed. In the section of optical absorption analysis, the authors should mention how the absorption is obtained by R and T.

Author Response

Dear reviewer:

On behalf of my co-authors, I would like to express our great appreciation for your constructive comments. We have carefully read the comments and then made necessary changes to all comments and suggestions. These comments and suggestions have significantly improved the quality of our manuscript. We hope that the responses to the comments will meet with approval, and the detailed responses are listed in the attachment.

Please see the attachment.

Thank you again for your significant contribution to our paper. Looking forward to hearing from you soon.

 

Best regards.

Yours sincerely,

Jingmin Wu and co-authors

Author Response File: Author Response.docx

Reviewer 2 Report

In this work, the authors have made efforts to determine the activation of ion implanted region in the SiC. Authors also claimed that damage depth in the implanted SiC is determined by ellipsometery. Though the work sounds good, but not presented in a systematic manner. Experiments and results are vague in current form and needs major revison. Authors are encouraged to discuss in understandable manner so that it can add something to exist pool of knowledge:   

Line 34-- This material is also useful for temperature sensing applications. some well known work may refer e.g.,: 

https://doi.org/10.1016/j.vacuum.2020.109590

https://doi.org/10.1116/1.4884756 

Line 34 -- How about dopant diffusion instead implantation?

Line 54 -- Can you please explore the unique optical absorption?

Line 66- Please explore on c-film formation. 

Line 71-- O2 plasma means simple ashing? Please explore. 

Line 87-- What do you mean by "Dates". 

Line 101-- Please explore on optical model and grade? 

-- 4H-SiC is a transparent material and there will be rarely any reflection. How the ellipsometry is done?

line 104 -- "The damage layer ----" is vague. Please rewrite. 476nm is range of the ions? 

Line 107-- How the 476nm is determined by ellipsometer? clarify your justifications. 

Line 136-- "--absorption intensity" add suitable refrence here. 

Line 138-- encircle the regions in figure 2 for better readibility. 

-- Is the technique discussed in the work only applicable to 1) SiC and 2) ion implanted semiconductors? How about e.g., Si and dopant diffusion? Please comment.  

 

Author Response

Dear reviewer:

On behalf of my co-authors, I would like to express our great appreciation for your constructive comments. We have carefully read the comments and then made necessary changes to all comments and suggestions. These comments and suggestions have significantly improved the quality of our manuscript. We hope that the responses to the comments will meet with approval, and the detailed responses are listed in the attachment.

Please see the attachment.

Thank you again for your significant contribution to our paper. Looking forward to hearing from you soon.

 

Best regards.

Yours sincerely,

Jingmin Wu and co-authors

Author Response File: Author Response.docx

Round 2

Reviewer 2 Report

Authors have satisfactory responded to reviewer's queries. Based on those, the work may be accepted. 

Line 32-- please check the refrence.