Yu, Z.; Zhao, X.; Ai, C.; Fang, X.; Zhao, X.; Wang, Y.; Zhang, H.
Two-Terminal Nonvolatile Write-Once-Read-Many-Times Memory Based on All-Inorganic Halide Perovskite. Micromachines 2023, 14, 93.
https://doi.org/10.3390/mi14010093
AMA Style
Yu Z, Zhao X, Ai C, Fang X, Zhao X, Wang Y, Zhang H.
Two-Terminal Nonvolatile Write-Once-Read-Many-Times Memory Based on All-Inorganic Halide Perovskite. Micromachines. 2023; 14(1):93.
https://doi.org/10.3390/mi14010093
Chicago/Turabian Style
Yu, Zhipeng, Xiaofeng Zhao, Chunpeng Ai, Xin Fang, Xiaohan Zhao, Yanchao Wang, and Hongquan Zhang.
2023. "Two-Terminal Nonvolatile Write-Once-Read-Many-Times Memory Based on All-Inorganic Halide Perovskite" Micromachines 14, no. 1: 93.
https://doi.org/10.3390/mi14010093
APA Style
Yu, Z., Zhao, X., Ai, C., Fang, X., Zhao, X., Wang, Y., & Zhang, H.
(2023). Two-Terminal Nonvolatile Write-Once-Read-Many-Times Memory Based on All-Inorganic Halide Perovskite. Micromachines, 14(1), 93.
https://doi.org/10.3390/mi14010093