Wang, B.; Xu, H.; Ren, N.; Wang, H.; Huang, K.; Sheng, K.
A Novel SiC Trench MOSFET with Self-Aligned N-Type Ion Implantation Technique. Micromachines 2023, 14, 2212.
https://doi.org/10.3390/mi14122212
AMA Style
Wang B, Xu H, Ren N, Wang H, Huang K, Sheng K.
A Novel SiC Trench MOSFET with Self-Aligned N-Type Ion Implantation Technique. Micromachines. 2023; 14(12):2212.
https://doi.org/10.3390/mi14122212
Chicago/Turabian Style
Wang, Baozhu, Hongyi Xu, Na Ren, Hengyu Wang, Kai Huang, and Kuang Sheng.
2023. "A Novel SiC Trench MOSFET with Self-Aligned N-Type Ion Implantation Technique" Micromachines 14, no. 12: 2212.
https://doi.org/10.3390/mi14122212
APA Style
Wang, B., Xu, H., Ren, N., Wang, H., Huang, K., & Sheng, K.
(2023). A Novel SiC Trench MOSFET with Self-Aligned N-Type Ion Implantation Technique. Micromachines, 14(12), 2212.
https://doi.org/10.3390/mi14122212