Qin, H.; Ba, Z.; Xie, S.; Zhang, Z.; Chen, W.; Xun, Q.
Parameters Design and Optimization of SiC MOSFET Driving Circuit with Consideration of Comprehensive Loss and Voltage Stress. Micromachines 2023, 14, 505.
https://doi.org/10.3390/mi14030505
AMA Style
Qin H, Ba Z, Xie S, Zhang Z, Chen W, Xun Q.
Parameters Design and Optimization of SiC MOSFET Driving Circuit with Consideration of Comprehensive Loss and Voltage Stress. Micromachines. 2023; 14(3):505.
https://doi.org/10.3390/mi14030505
Chicago/Turabian Style
Qin, Haihong, Zhenhua Ba, Sixuan Xie, Zimo Zhang, Wenming Chen, and Qian Xun.
2023. "Parameters Design and Optimization of SiC MOSFET Driving Circuit with Consideration of Comprehensive Loss and Voltage Stress" Micromachines 14, no. 3: 505.
https://doi.org/10.3390/mi14030505
APA Style
Qin, H., Ba, Z., Xie, S., Zhang, Z., Chen, W., & Xun, Q.
(2023). Parameters Design and Optimization of SiC MOSFET Driving Circuit with Consideration of Comprehensive Loss and Voltage Stress. Micromachines, 14(3), 505.
https://doi.org/10.3390/mi14030505