Order Article Reprints

Hu H, Zhang B, Liu L, Xu D, Shao Y, Wu Y, Hao X. Growth of Freestanding Gallium Nitride (GaN) Through Polyporous Interlayer Formed Directly During Successive Hydride Vapor Phase Epitaxy (HVPE) Process. Crystals. 2020; 10(2):141. https://doi.org/10.3390/cryst10020141

Hu, Haixiao, Baoguo Zhang, Lei Liu, Deqin Xu, Yongliang Shao, Yongzhong Wu, and Xiaopeng Hao. 2020. "Growth of Freestanding Gallium Nitride (GaN) Through Polyporous Interlayer Formed Directly During Successive Hydride Vapor Phase Epitaxy (HVPE) Process" Crystals 10, no. 2: 141. https://doi.org/10.3390/cryst10020141

Hu, H., Zhang, B., Liu, L., Xu, D., Shao, Y., Wu, Y., & Hao, X. (2020). Growth of Freestanding Gallium Nitride (GaN) Through Polyporous Interlayer Formed Directly During Successive Hydride Vapor Phase Epitaxy (HVPE) Process. Crystals, 10(2), 141. https://doi.org/10.3390/cryst10020141