White, R.C.; Khoury, M.; Wong, M.S.; Li, H.; Lynsky, C.; Iza, M.; Keller, S.; Sotta, D.; Nakamura, S.; DenBaars, S.P.
Realization of III-Nitride c-Plane microLEDs Emitting from 470 to 645 nm on Semi-Relaxed Substrates Enabled by V-Defect-Free Base Layers. Crystals 2021, 11, 1168.
https://doi.org/10.3390/cryst11101168
AMA Style
White RC, Khoury M, Wong MS, Li H, Lynsky C, Iza M, Keller S, Sotta D, Nakamura S, DenBaars SP.
Realization of III-Nitride c-Plane microLEDs Emitting from 470 to 645 nm on Semi-Relaxed Substrates Enabled by V-Defect-Free Base Layers. Crystals. 2021; 11(10):1168.
https://doi.org/10.3390/cryst11101168
Chicago/Turabian Style
White, Ryan C., Michel Khoury, Matthew S. Wong, Hongjian Li, Cheyenne Lynsky, Michael Iza, Stacia Keller, David Sotta, Shuji Nakamura, and Steven P. DenBaars.
2021. "Realization of III-Nitride c-Plane microLEDs Emitting from 470 to 645 nm on Semi-Relaxed Substrates Enabled by V-Defect-Free Base Layers" Crystals 11, no. 10: 1168.
https://doi.org/10.3390/cryst11101168
APA Style
White, R. C., Khoury, M., Wong, M. S., Li, H., Lynsky, C., Iza, M., Keller, S., Sotta, D., Nakamura, S., & DenBaars, S. P.
(2021). Realization of III-Nitride c-Plane microLEDs Emitting from 470 to 645 nm on Semi-Relaxed Substrates Enabled by V-Defect-Free Base Layers. Crystals, 11(10), 1168.
https://doi.org/10.3390/cryst11101168
