Article Versions Notes

Choi Y-J, Lee J-H, Choi J-S, An S-J, Hwang Y-M, Roh J-S, Im K-S. Improved Noise and Device Performances of AlGaN/GaN HEMTs with In Situ Silicon Carbon Nitride (SiCN) Cap Layer. Crystals. 2021; 11(5):489. https://doi.org/10.3390/cryst11050489

Choi, Yeo-Jin, Jae-Hoon Lee, Jin-Seok Choi, Sung-Jin An, Young-Min Hwang, Jae-Seung Roh, and Ki-Sik Im. 2021. "Improved Noise and Device Performances of AlGaN/GaN HEMTs with In Situ Silicon Carbon Nitride (SiCN) Cap Layer" Crystals 11, no. 5: 489. https://doi.org/10.3390/cryst11050489

Choi, Y. -J., Lee, J. -H., Choi, J. -S., An, S. -J., Hwang, Y. -M., Roh, J. -S., & Im, K. -S. (2021). Improved Noise and Device Performances of AlGaN/GaN HEMTs with In Situ Silicon Carbon Nitride (SiCN) Cap Layer. Crystals, 11(5), 489. https://doi.org/10.3390/cryst11050489