Article Versions Notes

Chen S, Cui P, Xu M, Lin Z, Xu X, Zeng Y, Han J. Improved Electrical Performance of InAlN/GaN High Electron Mobility Transistors with Post Bis(trifluoromethane) Sulfonamide Treatment. Crystals. 2022; 12(11):1521. https://doi.org/10.3390/cryst12111521

Chen, Siheng, Peng Cui, Mingsheng Xu, Zhaojun Lin, Xiangang Xu, Yuping Zeng, and Jisheng Han. 2022. "Improved Electrical Performance of InAlN/GaN High Electron Mobility Transistors with Post Bis(trifluoromethane) Sulfonamide Treatment" Crystals 12, no. 11: 1521. https://doi.org/10.3390/cryst12111521

Chen, S., Cui, P., Xu, M., Lin, Z., Xu, X., Zeng, Y., & Han, J. (2022). Improved Electrical Performance of InAlN/GaN High Electron Mobility Transistors with Post Bis(trifluoromethane) Sulfonamide Treatment. Crystals, 12(11), 1521. https://doi.org/10.3390/cryst12111521