Wong, M.S.; Chan, P.; Lim, N.; Zhang, H.; White, R.C.; Speck, J.S.; Denbaars, S.P.; Nakamura, S.
Low Forward Voltage III-Nitride Red Micro-Light-Emitting Diodes on a Strain Relaxed Template with an InGaN Decomposition Layer. Crystals 2022, 12, 721.
https://doi.org/10.3390/cryst12050721
AMA Style
Wong MS, Chan P, Lim N, Zhang H, White RC, Speck JS, Denbaars SP, Nakamura S.
Low Forward Voltage III-Nitride Red Micro-Light-Emitting Diodes on a Strain Relaxed Template with an InGaN Decomposition Layer. Crystals. 2022; 12(5):721.
https://doi.org/10.3390/cryst12050721
Chicago/Turabian Style
Wong, Matthew S., Philip Chan, Norleakvisoth Lim, Haojun Zhang, Ryan C. White, James S. Speck, Steven P. Denbaars, and Shuji Nakamura.
2022. "Low Forward Voltage III-Nitride Red Micro-Light-Emitting Diodes on a Strain Relaxed Template with an InGaN Decomposition Layer" Crystals 12, no. 5: 721.
https://doi.org/10.3390/cryst12050721
APA Style
Wong, M. S., Chan, P., Lim, N., Zhang, H., White, R. C., Speck, J. S., Denbaars, S. P., & Nakamura, S.
(2022). Low Forward Voltage III-Nitride Red Micro-Light-Emitting Diodes on a Strain Relaxed Template with an InGaN Decomposition Layer. Crystals, 12(5), 721.
https://doi.org/10.3390/cryst12050721