Lee, S.-T.; Kong, M.; Jang, H.; Song, C.-H.; Kim, S.; Yun, D.-Y.; Jeong, H.-s.; Kim, D.-H.; Shin, C.-S.; Seo, K.-S.
The Variation of Schottky Barrier Height Induced by the Phase Separation of InAlAs Layers on InP HEMT Devices. Crystals 2022, 12, 966.
https://doi.org/10.3390/cryst12070966
AMA Style
Lee S-T, Kong M, Jang H, Song C-H, Kim S, Yun D-Y, Jeong H-s, Kim D-H, Shin C-S, Seo K-S.
The Variation of Schottky Barrier Height Induced by the Phase Separation of InAlAs Layers on InP HEMT Devices. Crystals. 2022; 12(7):966.
https://doi.org/10.3390/cryst12070966
Chicago/Turabian Style
Lee, Sang-Tae, Minwoo Kong, Hyunchul Jang, Chang-Hun Song, Shinkeun Kim, Do-Young Yun, Hyeon-seok Jeong, Dae-Hyun Kim, Chan-Soo Shin, and Kwang-Seok Seo.
2022. "The Variation of Schottky Barrier Height Induced by the Phase Separation of InAlAs Layers on InP HEMT Devices" Crystals 12, no. 7: 966.
https://doi.org/10.3390/cryst12070966
APA Style
Lee, S. -T., Kong, M., Jang, H., Song, C. -H., Kim, S., Yun, D. -Y., Jeong, H. -s., Kim, D. -H., Shin, C. -S., & Seo, K. -S.
(2022). The Variation of Schottky Barrier Height Induced by the Phase Separation of InAlAs Layers on InP HEMT Devices. Crystals, 12(7), 966.
https://doi.org/10.3390/cryst12070966
