Jacobs, A.G.; Feigelson, B.N.; Spencer, J.A.; Tadjer, M.J.; Hite, J.K.; Hobart, K.D.; Anderson, T.J.
Efficient Activation and High Mobility of Ion-Implanted Silicon for Next-Generation GaN Devices. Crystals 2023, 13, 736.
https://doi.org/10.3390/cryst13050736
AMA Style
Jacobs AG, Feigelson BN, Spencer JA, Tadjer MJ, Hite JK, Hobart KD, Anderson TJ.
Efficient Activation and High Mobility of Ion-Implanted Silicon for Next-Generation GaN Devices. Crystals. 2023; 13(5):736.
https://doi.org/10.3390/cryst13050736
Chicago/Turabian Style
Jacobs, Alan G., Boris N. Feigelson, Joseph A. Spencer, Marko J. Tadjer, Jennifer K. Hite, Karl D. Hobart, and Travis J. Anderson.
2023. "Efficient Activation and High Mobility of Ion-Implanted Silicon for Next-Generation GaN Devices" Crystals 13, no. 5: 736.
https://doi.org/10.3390/cryst13050736
APA Style
Jacobs, A. G., Feigelson, B. N., Spencer, J. A., Tadjer, M. J., Hite, J. K., Hobart, K. D., & Anderson, T. J.
(2023). Efficient Activation and High Mobility of Ion-Implanted Silicon for Next-Generation GaN Devices. Crystals, 13(5), 736.
https://doi.org/10.3390/cryst13050736
