Capan, I.; Yamazaki, Y.; Oki, Y.; Brodar, T.; Makino, T.; Ohshima, T.
Minority Carrier Trap in n-Type 4H–SiC Schottky Barrier Diodes. Crystals 2019, 9, 328.
https://doi.org/10.3390/cryst9070328
AMA Style
Capan I, Yamazaki Y, Oki Y, Brodar T, Makino T, Ohshima T.
Minority Carrier Trap in n-Type 4H–SiC Schottky Barrier Diodes. Crystals. 2019; 9(7):328.
https://doi.org/10.3390/cryst9070328
Chicago/Turabian Style
Capan, Ivana, Yuichi Yamazaki, Yuya Oki, Tomislav Brodar, Takahiro Makino, and Takeshi Ohshima.
2019. "Minority Carrier Trap in n-Type 4H–SiC Schottky Barrier Diodes" Crystals 9, no. 7: 328.
https://doi.org/10.3390/cryst9070328
APA Style
Capan, I., Yamazaki, Y., Oki, Y., Brodar, T., Makino, T., & Ohshima, T.
(2019). Minority Carrier Trap in n-Type 4H–SiC Schottky Barrier Diodes. Crystals, 9(7), 328.
https://doi.org/10.3390/cryst9070328