Substrate-Driven Atomic Layer Deposition of High-κ Dielectrics on 2D Materials

Round 1

Reviewer 1 Report

The manuscript is well written and provides important and interesting information about the growth of Al₂O₃ dielectric on 2D materials for the future nanoelectronics based on TMDCs. To ensure high device performance and endurance the dielectric must be carefully selected having in mind both the dielectric layer properties itself and the interface trap density. Authors provides nice overview how to grown good quality continuous film of Al₂O₃ on MoS₂ and graphene but the second important topic i.e. the density of trap at the interface between 2D material and dielectric is completely ignored. Only a brief discussion is on p.5 lines 156-163. As we know the sample treatment (annealing parameters, temperature, time atmosphere, pressure) and the method how the dielectric was grown (temperature, precursors, surface functionalization, …) will strongly affect the interface trap density D_it and final device performance. Therefore, I would strongly suggest to add one chapter where this problem will be described.

Small typos:

I would remove brackets from the text in abstract and p1. L.37 it is WeSe but should be WeSe₂

Author Response

The answers to the comments of Reviewer1 are in the attached word file.

Author Response File: Author Response.pdf

Reviewer 2 Report

1. the authors should check for grammatic spelling errors.
2. in the abstract the authors start by mentioning that  ": Atomic layer deposition (ALD) of high-κ dielectrics on two dimensional (2D) materials (including graphene and transition metal dichalcogenides) still represents a challenge". why is there this challenge I think the Author needs to mention something to do with the lack of surface dangling bonds of 2D materials hence atomic layer deposition (ALD) of high-κ dielectrics directly on  2D materials is difficult although a nucleation layer is usually required

Author Response

The answers to the comments of the Reviewer2 are in the attached word file.

Author Response File: Author Response.pdf

Reviewer 3 Report

Schilirò et. al offered here a summary and overview of articles dealing with ALD of high-κ dielectrics onto 2D materials. As the deposition of any material (in the means of the ALD technique) onto the surface of the 2D material is quite demanding, the nuber of the published works in this field is relatively low, nevertheless the field deserves writing a review. The submitted manuscript represents such as attemtpt; this work is reasonably well written with occasional glitches in the language, clearly arranged and easy to understand for a reader familiar with the topic. I'd have only a few comments to the manuscript.

1) Although the title baits the reader to a treatise on high-κ dielectrics, most of the paper is dedicated to depositions of Al2O3 only with just few notes about HfO2 as the only other mentioned material. I wonder, why aren't some other works on the other high-κ dielectrics mentioned there? (e.g. ZrO2, 10.1016/j.jallcom.2021.159116, 10.1088/2053-1583/aaef1e etc.)

2) There are occasional glitches present all through the manuscript which would deserve some polishing (e.g. lines 18, 37, 216-217, 273-274, 307-308 etc.)

Author Response

The answers to the comments of Reviewer 3 are in the attached word file.

Author Response File: Author Response.pdf