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Journal: Appl. Sci., 2019
Volume: 9
Number: 788
788
Article: Enhanced Device Performance of GaInN-Based Green Light-Emitting Diode with Sputtered AlN Buffer Layer
Authors: by Seiji Ishimoto, Dong-Pyo Han, Kengo Yamamoto, Ryoya Mano, Satoshi Kamiyama, Tetsuya Takeuchi, Motoaki Iwaya and Isamu Akasaki
Link: https://www.mdpi.com/2076-3417/9/4/788

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