Mohd Saman, R.; Wan Sabli, S.K.; Mat Hussin, M.R.; Othman, M.H.; Mohammad Haniff, M.A.S.; Syono, M.I.
High Voltage Graphene Nanowall Trench MOS Barrier Schottky Diode Characterization for High Temperature Applications. Appl. Sci. 2019, 9, 1587.
https://doi.org/10.3390/app9081587
AMA Style
Mohd Saman R, Wan Sabli SK, Mat Hussin MR, Othman MH, Mohammad Haniff MAS, Syono MI.
High Voltage Graphene Nanowall Trench MOS Barrier Schottky Diode Characterization for High Temperature Applications. Applied Sciences. 2019; 9(8):1587.
https://doi.org/10.3390/app9081587
Chicago/Turabian Style
Mohd Saman, Rahimah, Sharaifah Kamariah Wan Sabli, Mohd Rofei Mat Hussin, Muhammad Hilmi Othman, Muhammad Aniq Shazni Mohammad Haniff, and Mohd Ismahadi Syono.
2019. "High Voltage Graphene Nanowall Trench MOS Barrier Schottky Diode Characterization for High Temperature Applications" Applied Sciences 9, no. 8: 1587.
https://doi.org/10.3390/app9081587
APA Style
Mohd Saman, R., Wan Sabli, S. K., Mat Hussin, M. R., Othman, M. H., Mohammad Haniff, M. A. S., & Syono, M. I.
(2019). High Voltage Graphene Nanowall Trench MOS Barrier Schottky Diode Characterization for High Temperature Applications. Applied Sciences, 9(8), 1587.
https://doi.org/10.3390/app9081587