Article Versions Notes

Li H, Wang J, Bai J, Zhang S, Zhang S, Sun Y, Dou Q, Ding M, Wang Y, Qu D, et al. The Structural, Electronic, and Optical Properties of Ge/Si Quantum Wells: Lasing at a Wavelength of 1550 nm. Nanomaterials. 2020; 10(5):1006. https://doi.org/10.3390/nano10051006

Li, Hongqiang, Jianing Wang, Jinjun Bai, Shanshan Zhang, Sai Zhang, Yaqiang Sun, Qianzhi Dou, Mingjun Ding, Youxi Wang, Dan Qu, and et al. 2020. "The Structural, Electronic, and Optical Properties of Ge/Si Quantum Wells: Lasing at a Wavelength of 1550 nm" Nanomaterials 10, no. 5: 1006. https://doi.org/10.3390/nano10051006

Li, H., Wang, J., Bai, J., Zhang, S., Zhang, S., Sun, Y., Dou, Q., Ding, M., Wang, Y., Qu, D., Du, J., Tang, C., Li, E., & Prades, J. D. (2020). The Structural, Electronic, and Optical Properties of Ge/Si Quantum Wells: Lasing at a Wavelength of 1550 nm. Nanomaterials, 10(5), 1006. https://doi.org/10.3390/nano10051006