Anisotropy of the In-Plane and Out-of-Plane Resistivity and the Hall Effect in the Normal State of Vicinal-Grown YBa2Cu3O7−δ Thin Films
Abstract
:1. Introduction
2. Materials and Methods
2.1. Sample Preparation
2.2. Transport Measurements
2.3. Calculation of the Anisotropic Transport Properties
2.3.1. Evaluation of Diagonal Resistivity Tensor Elements
2.3.2. Evaluation of Off-Diagonal (Hall) Tensor Elements
3. Results and Discussion
4. Conclusions
Author Contributions
Funding
Data Availability Statement
Conflicts of Interest
References
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Heine, G.; Lang, W.; Rössler, R.; Pedarnig, J.D. Anisotropy of the In-Plane and Out-of-Plane Resistivity and the Hall Effect in the Normal State of Vicinal-Grown YBa2Cu3O7−δ Thin Films. Nanomaterials 2021, 11, 675. https://doi.org/10.3390/nano11030675
Heine G, Lang W, Rössler R, Pedarnig JD. Anisotropy of the In-Plane and Out-of-Plane Resistivity and the Hall Effect in the Normal State of Vicinal-Grown YBa2Cu3O7−δ Thin Films. Nanomaterials. 2021; 11(3):675. https://doi.org/10.3390/nano11030675
Chicago/Turabian StyleHeine, Gernot, Wolfgang Lang, Roman Rössler, and Johannes D. Pedarnig. 2021. "Anisotropy of the In-Plane and Out-of-Plane Resistivity and the Hall Effect in the Normal State of Vicinal-Grown YBa2Cu3O7−δ Thin Films" Nanomaterials 11, no. 3: 675. https://doi.org/10.3390/nano11030675
APA StyleHeine, G., Lang, W., Rössler, R., & Pedarnig, J. D. (2021). Anisotropy of the In-Plane and Out-of-Plane Resistivity and the Hall Effect in the Normal State of Vicinal-Grown YBa2Cu3O7−δ Thin Films. Nanomaterials, 11(3), 675. https://doi.org/10.3390/nano11030675