Liang, Y.; Duan, J.; Zhang, P.; Low, K.L.; Zhang, J.; Liu, W.
Characterization of Trap States in AlGaN/GaN MIS-High-Electron-Mobility Transistors under Semi-on-State Stress. Nanomaterials 2024, 14, 1529.
https://doi.org/10.3390/nano14181529
AMA Style
Liang Y, Duan J, Zhang P, Low KL, Zhang J, Liu W.
Characterization of Trap States in AlGaN/GaN MIS-High-Electron-Mobility Transistors under Semi-on-State Stress. Nanomaterials. 2024; 14(18):1529.
https://doi.org/10.3390/nano14181529
Chicago/Turabian Style
Liang, Ye, Jiachen Duan, Ping Zhang, Kain Lu Low, Jie Zhang, and Wen Liu.
2024. "Characterization of Trap States in AlGaN/GaN MIS-High-Electron-Mobility Transistors under Semi-on-State Stress" Nanomaterials 14, no. 18: 1529.
https://doi.org/10.3390/nano14181529
APA Style
Liang, Y., Duan, J., Zhang, P., Low, K. L., Zhang, J., & Liu, W.
(2024). Characterization of Trap States in AlGaN/GaN MIS-High-Electron-Mobility Transistors under Semi-on-State Stress. Nanomaterials, 14(18), 1529.
https://doi.org/10.3390/nano14181529