Zhang, J.; Zhang, Y.; Chen, D.; Zhu, W.; Xi, H.; Zhang, J.; Zhang, C.; Hao, Y.
Bendable Single Crystal Silicon Nanomembrane Thin Film Transistors with Improved Low-Temperature Processed Metal/n-Si Ohmic Contact by Inserting TiO2 Interlayer. Nanomaterials 2018, 8, 1060.
https://doi.org/10.3390/nano8121060
AMA Style
Zhang J, Zhang Y, Chen D, Zhu W, Xi H, Zhang J, Zhang C, Hao Y.
Bendable Single Crystal Silicon Nanomembrane Thin Film Transistors with Improved Low-Temperature Processed Metal/n-Si Ohmic Contact by Inserting TiO2 Interlayer. Nanomaterials. 2018; 8(12):1060.
https://doi.org/10.3390/nano8121060
Chicago/Turabian Style
Zhang, Jiaqi, Yi Zhang, Dazheng Chen, Weidong Zhu, He Xi, Jincheng Zhang, Chunfu Zhang, and Yue Hao.
2018. "Bendable Single Crystal Silicon Nanomembrane Thin Film Transistors with Improved Low-Temperature Processed Metal/n-Si Ohmic Contact by Inserting TiO2 Interlayer" Nanomaterials 8, no. 12: 1060.
https://doi.org/10.3390/nano8121060
APA Style
Zhang, J., Zhang, Y., Chen, D., Zhu, W., Xi, H., Zhang, J., Zhang, C., & Hao, Y.
(2018). Bendable Single Crystal Silicon Nanomembrane Thin Film Transistors with Improved Low-Temperature Processed Metal/n-Si Ohmic Contact by Inserting TiO2 Interlayer. Nanomaterials, 8(12), 1060.
https://doi.org/10.3390/nano8121060