Dai, J.-J.; Liu, C.-W.; Wu, S.-K.; Huynh, S.-H.; Jiang, J.-G.; Yen, S.-A.; Mai, T.T.; Wen, H.-C.; Chou, W.-C.; Hu, C.-W.;
et al. Improving Transport Properties of GaN-Based HEMT on Si (111) by Controlling SiH4 Flow Rate of the SiNx Nano-Mask. Coatings 2021, 11, 16.
https://doi.org/10.3390/coatings11010016
AMA Style
Dai J-J, Liu C-W, Wu S-K, Huynh S-H, Jiang J-G, Yen S-A, Mai TT, Wen H-C, Chou W-C, Hu C-W,
et al. Improving Transport Properties of GaN-Based HEMT on Si (111) by Controlling SiH4 Flow Rate of the SiNx Nano-Mask. Coatings. 2021; 11(1):16.
https://doi.org/10.3390/coatings11010016
Chicago/Turabian Style
Dai, Jin-Ji, Cheng-Wei Liu, Ssu-Kuan Wu, Sa-Hoang Huynh, Jhen-Gang Jiang, Sui-An Yen, Thi Thu Mai, Hua-Chiang Wen, Wu-Ching Chou, Chih-Wei Hu,
and et al. 2021. "Improving Transport Properties of GaN-Based HEMT on Si (111) by Controlling SiH4 Flow Rate of the SiNx Nano-Mask" Coatings 11, no. 1: 16.
https://doi.org/10.3390/coatings11010016
APA Style
Dai, J. -J., Liu, C. -W., Wu, S. -K., Huynh, S. -H., Jiang, J. -G., Yen, S. -A., Mai, T. T., Wen, H. -C., Chou, W. -C., Hu, C. -W., & Xuan, R.
(2021). Improving Transport Properties of GaN-Based HEMT on Si (111) by Controlling SiH4 Flow Rate of the SiNx Nano-Mask. Coatings, 11(1), 16.
https://doi.org/10.3390/coatings11010016