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Article

Preparation and Optoelectrical Property of Silver Nanowire Transparent Conductive Film via Slot Die Coating

by
Jiaqi Shan
1,2,
Ye Hong
3,
Haoyu Wang
4,
Kaixuan Cui
1,
Jianbao Ding
4 and
Xingzhong Guo
1,2,*
1
State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310058, China
2
ZJU-Hangzhou Global Scientific and Technological Innovation Center, Hangzhou 311200, China
3
Zhejiang X-Way Nano Technology Co., Ltd., Hangzhou 311200, China
4
Zhejiang Kechuang Advanced Materials Technology Co., Ltd., Hangzhou 310050, China
*
Author to whom correspondence should be addressed.
Coatings 2025, 15(1), 95; https://doi.org/10.3390/coatings15010095
Submission received: 23 December 2024 / Revised: 14 January 2025 / Accepted: 14 January 2025 / Published: 15 January 2025
(This article belongs to the Special Issue Advanced Films and Coatings for Flexible Electronics)
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Review Reports Versions Notes

Abstract

:
Silver nanowire transparent conductive films (AgNW TCFs), as the novel transparent electrode materials replacing ITO, are anticipated to be applied in numerous optoelectronic devices, and slot-die coating is currently acknowledged as the most suitable method for the mass production of large-sized AgNW TCFs. In this study, sodium carboxymethyl cellulose (CMC) and polyvinyl alcohol (PVA), as film-forming aids, and AgNWs, as conductive materials, were utilized to prepare a specialized AgNW ink, and a slot-die coating is employed to print and prepare AgNW TCFs. The optoelectrical properties of AgNW TCFs are optimized by adjusting the compositions of AgNW ink and the process parameters of slot-die coating. The suitable compositions of AgNW ink and the optimal parameters of slot-die coating are a CMC type of V, a PVA volume of 1 mL, a AgNW volume of 1.5 mL, a volume ratio of 30 and 45 nm AgNWs (2:1), and a coating height of 400 μm. The resultant AgNW TCFs achieve excellent comprehensive optoelectronic performance, with a sheet resistance of less than 50 Ω/sq, a visible light transmittance exceeding 92%, and a haze below 1.8%. This research provides a valuable approach to producing AgNW TCFs on a large scale via the slot-die coating.

1. Introduction

Silver nanowires (AgNWs), as a type of one-dimensional nanometal material, exhibit characteristics such as a nanoscale diameter (10–200 nm), an ultra-high aspect ratio (>1000), extremely low resistivity (1.586 × 10−8 Ω·m), and excellent flexibility [1,2,3,4,5]. Based on these characteristics, researchers have constructed an interconnected conductive network of AgNWs on the surface of flexible transparent plastic films to prepare silver nanowire transparent conductive films (AgNW TCFs). Compared to traditional indium tin oxide transparent conductive films (ITO TCFs), this new type of transparent conductive film material not only possesses excellent optoelectrical properties but also has a lighter weight, better flexibility, a larger size, and lower manufacturing costs [6,7]. ITO TCFs are inorganic oxide materials with high brittleness, rendering them highly susceptible to bending and subsequent failure [8,9]. High-performance ITO TCFs with excellent optoelectrical properties are typically prepared using magnetron sputtering [10,11,12], which involves expensive equipment and incurs high costs. The flexibility and bending resistance of AgNW TCFs far surpasses those of ITO TCFs, which indicates that AgNW TCFs hold promising applications in the field of flexible electronics [13,14,15]. In general, AgNW TCFs can utilize ultra-thin (≤50 μm) polyester films with ultra-high visible light transmittance (≥97%) as substrates [16], offering greater thinness and higher visible light transmittance. There are numerous methods for preparing AgNW TCFs, including spin coating [17,18], spray coating [19,20], blade coating [21,22], Meyer rod coating [23,24,25], screen printing [26,27,28], slot-die coating [29,30], and self-driven climbing [31]. Among these methods, slot-die coating is considered the most promising method for achieving large-scale production of AgNW TCFs. The AgNW TCFs prepared via slot-die coating can exhibit excellent optoelectrical properties and good uniformity. The width of the prepared AgNW TCFs can reach up to 1600 mm, enabling roll-to-roll printing. The cost of producing AgNW TCFs on a large-area slot-die coating production line can be reduced to 50 RMB/m2, while ITO TCFs with the same quality cost 110 RMB/m2 [32]. Therefore, AgNW TCFs are expected to replace ITO TCFs as the next-generation transparent electrode material and are applicable to various optoelectronic devices such as touch panels [33,34], solar cells [35,36], electroluminescent displays (ACEL/OLED) [37,38], polymer dispersed liquid crystal (PDLC) [39,40], transparent heaters [41,42], and so on.
Although AgNW TCFs offer notable advantages over ITO TCFs, they also encounter challenges such as immature preparation processes and inadequate application verification. Different types of optoelectronic devices have distinct property requirements for transparent electrodes. For example, OLED and perovskite solar cells have stringent requirements for the sheet resistance less than 20 Ω/sq of transparent electrodes [43,44], while touch panels have relatively lower requirements for sheet resistance, i.e., less than 50 Ω/sq of transparent electrodes [45]. However, they have higher requirements for the haze of transparent electrodes, which should be less than 2.0% [46]. PDLC has the lowest requirements for the sheet resistance of transparent electrodes, which should be less than 100 Ω/sq, and also requires lower haze, which should be less than 1.0% [39]. Therefore, optimizing the preparation process of AgNW TCFs for various application scenarios to obtain high-quality AgNW TCFs with diverse optoelectrical properties is an urgent research task that needs to be undertaken. In particular, research on optimizing the slot-die coating process can build a foundation for the mass production and wide application of AgNW TCFs. Currently, there are limited reports on the preparation of AgNW TCFs via slot-die coating; in particular, research reports on conductive ink for slot-die coating and process optimization are relatively scarce. Existing research on the preparation of AgNW TCFs via slot-die coating primarily focuses on optimizing the dispensing speed and coating speed of ink, and the reported AgNWs TCFs possess a sheet resistance of 50 Ω/sq and a visible light transmittance less than 90% [29,30]. The process parameters for slot-die coating must align with actual production requirements, and the range of adjustment is relatively narrow. In contrast, the formulation of AgNW ink used in actual production offers a broader scope for adjustment and optimization, exerting a greater influence on the optoelectrical property of AgNW TCFs [47]. Hence, research on the formulation of AgNW ink is important for regulating the optoelectrical property of AgNW TCFs.
This study aims to utilize ultra-thin polyethylene terephthalate (PET) films with ultra-high visible light transmittance as substrates, to fabricate AgNW ink using various diameters of AgNWs, and to prepare AgNW TCFs via the slot-die coating method. The process parameters of slot-die coating and the compositions of AgNW ink are optimized to achieve the regulation and enhancement of the optoelectrical properties of AgNW TCFs.

2. Materials and Methods

Materials: ultra-pure water (H2O, Shanghai Yuanye Bio–Technology Co., Ltd., Shanghai, China), ethanol (EtOH, Sinopharm Chemical Reagent Co., Ltd., Shanghai, China, 99.7%, AR), sodium carboxymethyl cellulose I–V (CMC I–V, Shanghai Aladdin Biochemical Technology Co., Ltd., Shanghai, China, AR), polyvinyl alcohol (PVA, Shanghai Aladdin Biochemical Technology Co., Ltd., Shanghai, China, M.W. 89,000~98,000), silver nanowires (AgNWs, Zhejiang Kechuang Advanced Materials Technology Co., Ltd., Hangzhou, China, 20, 30 and 45 nm, 10 mg/mL Ethanol dispersion), and polyethylene terephthalate (PET, Dongguan Kam Electronic Material Co., Ltd., Dongguan, China, 50 um, T = 97%).
Preparation process of AgNW ink and AgNW TCFs: The CMC was dissolved in ultra-pure water to prepare a clear and uniform CMC colloidal solution. Similarly, PVA was dissolved in ultra-pure water to prepare a clear and uniform PVA colloidal solution. Then, the CMC colloidal solution, PVA colloidal solution, ultra-pure water (1 mL), ethanol (5 mL), and AgNW dispersion solution were mixed and stirred at a constant speed for 30 min to obtain AgNW ink. The PET film was cut to the required size and secured onto the coating platform of the slot-die coating equipment (PE Coater-S300, Hunan NanoUp Electronics Technology Co., Ltd., Changsha, China). The prepared AgNW ink was transferred into the ink injector of the equipment. The parameters, including the ink injection speed (1 mL/min), coating speed (5 mm/s), and coating height (300–600 μm) of the slot-die coating equipment were set, and the ink was coated on the PET surface to form a liquid film with the movement of PET. Then, the PET was transferred to a 60 °C heating platform for drying, and AgNW TCFs were prepared after drying.
Characterization of AgNWs and AgNW TCFs: The microstructures of the AgNWs and AgNW TCFs were observed by a scanning electron microscope (SEM, Hitachi Corp., Tokyo, Japan, SU8010). The diameter of the AgNWs were performed by a transmission electron microscope (TEM, Thermo Fisher Scientific, Waltham, MA, USA, Talos F200X S). The UV–visible transmittance spectra of AgNW TCFs were characterized by an UV–visible spectrophotometer (UV–VIS, Shimadzu Corp., Kyoto, Japan, UV–3600i Plus). The sheet resistance of AgNW TCFs were measured by a four-point probe sheet resistance meter (Guangzhou four-point probe technology, Guangzhou, China, RTS–9, Φ0.5 mm tips). The visible light transmittance (at 550 nm) and haze of AgNWs were determined by a transmittance/haze tester (Shanghai Yidian Physical Optics Instrument Co., Ltd., Shanghai, China, WGT–S). The size of AgNW TCFs prepared in this paper were 15 cm × 15 cm. Each sample was divided into 9 small pieces of 5 cm × 5 cm to test the visible light transmittance, sheet resistance, and haze. The measured data of 9 small pieces were statistically analyzed via software “Origin Pro 2021” to obtain the average and median values.

3. Results and Discussion

3.1. Preparation Principle of AgNW TCFs

As shown in Figure 1, the preparation process of AgNW TCFs primarily comprises two parts: the preparation of AgNW ink and the printing of AgNW TCFs. In this process, the slot-die coating is employed to print AgNW TCFs, and the AgNW ink is suitable for the slot coating process. The AgNW ink primarily consists of solvents, film-forming aids, thickeners, and AgNWs. EtOH and H2O serve as solvents, which are used to disperse AgNWs and adjust the surface tension of the AgNW ink. CMC and PVA act as film-forming aids and possess excellent film-forming properties, which facilitate the formation of a conductive network structure by AgNWs. Additionally, CMC also play the role of a thickener, which can adjust the viscosity of the AgNW ink and enhance the adhesion of AgNWs on PET. AgNWs is used as the primary conductive material to construct the conductive network and constitute AgNW TCFs. When the prepared AgNW ink is transferred to the injector of the slot-die coating equipment, the AgNW ink is pumped into the coating head by the injector and extruded from the slit of the coating head onto the transparent PET substrate. As the PET moves and the AgNW ink is continuously injected, a liquid film containing AgNWs is formed on the PET surface, which can form AgNW TCFs after drying. Therefore, the final performance of AgNW TCFs is primarily influenced by the compositions of the AgNW ink and the process parameters of slot-die coating.
To optimize the optoelectrical property of AgNW TCFs to meet the application requirements in different fields, this study adjusted the formulation of AgNW ink and the process parameters of slot-die coating. Detailed information is provided in Table 1.

3.2. Effect of Coating Height on the Optoelectrical Property of AgNW TCFs

The primary process parameters of slot-die coating encompass ink injection speed, coating speed, slot width, and coating height. In practical production, the setting of coating speed often hinges on production efficiency, whereas the ink injection speed must be adjusted in conjunction with the coating speed to guarantee the film-forming quality and uniformity of the film. The slot width is constrained by the viscosity of the conductive ink. Hence, for slot-die coating processes, optimizing the coating height holds greater significance for practical production. As shown in Table 1, samples A1–A7 were prepared with different coating heights. The sheet resistance, visible light transmittance, and haze of these AgNW TCFs are presented in Figure 2. It is seen that as the coating height increases, the sheet resistance and visible light transmittance of the AgNW TCFs gradually decrease, while the haze gradually increases. This is attributed to the fact that the higher coating height will lead to the thicker AgNW TCFs, which implies a greater number of silver nanowires stacked on the PET. Figure 3 presents SEM images of AgNW TCFs prepared with various coating heights, illustrating that an increase in coating height results in a more compact stacking of AgNWs. The increased number of AgNWs enhances more conductive pathways, subsequently reducing sheet resistance. Simultaneously, a higher density of stacking inevitably causes the absorption and reflection of more visible light, resulting in a decrease in visible light transmittance and an increase in haze. As shown in Figure 2, when the coating height increases from 350 to 400 μm, the sheet resistance of AgNW TCFs decreases significantly, while the changes in visible light transmittance and haze are relatively minor. However, when the coating height further increases to 450 μm, the decrease in sheet resistance of AgNW TCFs slows down, while the haze increases significantly. Therefore, the coating height of 400 μm represents the optimal coating height, AgNW TCFs prepared with the coating height of 400 μm possess a mean sheet resistance of 91.6 Ω/sq, a mean visible light transmittance exceeding 92.7%, and a mean haze of 1.79%. The coating height of 400 μm facilitates the formation of TCFs with a more uniform distribution of AgNWs, enhancing the interconnection between AgNWs. However, too high a coating height may cause the aggregation of AgNWs, resulting in a significant increase in haze.

3.3. Effect of CMC on the Optoelectrical Property of AgNW TCFs

Film-forming aids are indispensable components in AgNW ink. Since AgNWs themselves do not possess film-forming properties, it is difficult to form AgNW TCFs with a conductive network using a dispersion solution containing only AgNWs for slot-die coating. During the coating process, AgNWs are prone to aligning parallel to the direction of ink flow, the effective connections between them are prevented, resulting in a large sheet resistance of the film [48]. CMC, as a water-soluble polymer compound, possesses excellent film-forming properties and adhesion, enabling the guidance of AgNWs to form a network distribution structure while adhering to the substrate surface during the coating process. Common CMCs can be categorized into five distinct types, namely, I–V, based on their molecular weight, viscosity, and degree of substitution (DS), as outlined in Table S1. Figure 4 illustrates the sheet resistance, visible light transmittance, and haze of AgNW TCFs prepared using different types of CMC as a film-forming aid. It is noted that AgNW TCF prepared with type V CMC exhibits lower sheet resistance (mean value of 83.1 Ω/sq), higher visible light transmittance (mean value of 92.6%), and lower haze (mean value of 1.82%), indicating superior optoelectrical properties. Compared to other types of CMC, type V CMC is more suitable as a film-forming aid for AgNW ink. Upon comparing Table S1 and Figure 4, it is evident that type-V CMC possesses a lower viscosity and DS value. High-viscosity CMC hinders the leveling of AgNW ink, whereas type-I CMC, possessing the highest viscosity, will lead to a more uneven distribution of sheet resistance in the prepared TCFs. The CMC with a high DS value possesses more carboxymethyl sodium groups and fewer surface hydroxyl groups, which hinders the internal dispersion between CMC, ethanol, and AgNWs in the AgNW ink. Type-II CMC boasts the highest DS value, and the prepared TCFs exhibit the highest haze, likely resulting from the agglomeration of AgNWs caused by uneven dispersion between CMC and AgNWs. Additionally, it can be observed that a large number of flaky particles appeared on the surface of AgNW TCFs prepared using CMC V, as shown in Figure 3. Therefore, we conducted an EDS mapping test on the AgNW TCFs, and the results are presented in Figure 5. The Ag element distribution on the surface of the nanowires is denser, while the surface of the flaky particles is densely distributed with Na and O elements, which may be due to the precipitation of NaOH from CMC during the film drying process. The presence of NaOH may increase the haze of AgNW TCFs, and the CMC with a higher DS has a higher Na content, consistent with the results shown in Figure 4c.

3.4. Effect of PVA on the Optoelectrical Property of AgNW TCFs

PVA is also a water-soluble polymer; it aids in film formation and enhances the adhesion of AgNWs. In this work, it serves as a secondary film-forming aid in AgNW ink. The impact of PVA addition on the sheet resistance, visible light transmittance, and haze of AgNW TCFs is illustrated in Figure 6. With the addition of PVA, the sheet resistance of AgNW TCFs increases, while the haze decreases. Especially when 1 mL of PVA solution is added, the haze of AgNW TCFs decreases significantly, while the sheet resistance and visible light transmittance remain relatively unchanged. When the volume of the PVA solution increases to 3 mL, the sheet resistance of AgNW TCFs significantly increases. The addition of PVA reduces the haze of AgNW TCFs, possibly due to the abundant hydroxyl groups on the surface of PVA, which facilitates improved dispersion uniformity of AgNWs in the AgNW ink. The excessive addition of PVA leads to an increase in sheet resistance, which can be attributed to two reasons. The first reason is that excessive PVA may hinder the overlapping between AgNWs, thereby increasing contact resistance. Another reason is that the addition of PVA solution indirectly reduces the content of AgNWs in the ink. Therefore, adding 1 mL of PVA solution to the ink system is suitable in this work; AgNW TCFs prepared with a PVA volume of 1 mL possess a mean sheet resistance of 70.4 Ω/sq, a mean visible light transmittance exceeding 93.0%, and a mean haze of 1.74%.

3.5. Effect of AgNWs on the Optoelectrical Property of AgNW TCFs

The most crucial component in AgNW ink is the AgNW dispersion. The content, diameter, and aspect ratio of AgNWs in AgNW ink have significant roles on the optoelectrical properties of the resulting AgNW TCFs. In this study, three different diameters of AgNW dispersion were used. The diameters of AgNWs were measured and statistically analyzed using TEM, while the lengths of AgNWs were measured and statistically analyzed using SEM, as shown in Figure 7, Figure 8, and Figure 9, respectively. Since the median diameters of the three types of AgNWs are close to 20, 30, and 45 nm, they are named 20 nm AgNWs, 30 nm AgNWs, and 45 nm AgNWs, respectively. As shown in Figure 9, Gaussian fitting was performed on the statistical distribution of the diameters and lengths of AgNWs, yielding normal distribution curves. The diameters of AgNWs were normally distributed around 20.5, 29.4, and 44.4 nm, respectively, and the lengths of AgNWs were normally distributed around 13.9, 30.2, and 49.6 μm, respectively. The ratio of the above length to the diameter of AgNWs is defined as the aspect ratio. Therefore, the aspect ratios of the three types of AgNWs are 678, 1027, and 1117, respectively.
To explore the impact of the type and dosage of AgNWs on the optoelectrical properties of AgNW TCFs, AgNW inks were prepared using different volumes of 20, 30 and 45 nm AgNW dispersions for AgNW TCFs. Their sheet resistance, visible light transmittance, and haze are presented in Figure 10, Figure 11 and Figure 12. It is evident that with the decrease in the usage of the three types of AgNWs, the sheet resistance and visible light transmittance of AgNW TCFs gradually increase, while the haze gradually decreases. This trend is similar to the variation in the optoelectrical performance of AgNW TCFs with coating height (Figure 2). The underlying reason is that an increase in the usage of AgNWs and coating height directly leads to an increase in the number of AgNWs accumulated on the PET. This conclusion is supported by the SEM images of AgNW TCFs, as shown in Figure 13. Upon further comparison of Figure 10, Figure 11, Figure 12 and Figure S1, it can be observed that when the amount of AgNWs is the same, TCFs prepared from thicker AgNWs exhibit lower sheet resistance and visible light transmittance, as well as higher haze. This is because the sheet resistance, visible light transmittance, and haze of AgNW TCFs are not only influenced by the quantity of AgNWs but also by the length and diameter of AgNWs, respectively. The 45 nm AgNWs with a longer length lead to more random interlacing between these AgNWs, indicating an increase in the “parallel connection” of AgNWs, which, in turn, reduces the resistance of the film. The 20 and 30 nm AgNWs with the thinner diameters can block less visible light under the same quantity, thus resulting in higher visible light transmittance for the corresponding TCFs. Compared to sheet resistance and visible light transmittance, the haze exerts a greater influence on the appearance of AgNW TCFs, as illustrated in Figure S2. The haze of AgNW TCFs is predominantly influenced by the diameter of AgNW. When the diameter of AgNW is significantly smaller than the wavelength of visible light, Rayleigh scattering will occur on the surface of AgNW, and the intensity of Rayleigh scattering is directly proportional to the diameter of AgNW. Consequently, a larger diameter of AgNW results in stronger Rayleigh scattering and a higher haze of TCFs. As a result, utilizing 45 nm AgNW facilitates the preparation of TCFs with low sheet resistance, whereas employing 20 and 30 nm AgNW is more conducive to producing TCFs with high visible light transmittance and low haze.
Continuing to analyze Figure 10, Figure 11 and Figure 12, it can also be observed that TCFs with the same sheet resistance, prepared using 30 and 45 nm AgNWs, exhibit higher visible light transmittance compared to those prepared using 20 nm AgNWs. The main reason is related to the quantity, length, and diameter of the AgNWs. To prepare TCFs with the same sheet resistance, finer diameter AgNWs often require a larger number of interconnections to reduce resistance due to their shorter length. The increase in the number of AgNWs means a decrease in visible light transmittance, and a finer diameter of AgNWs can mitigate this effect. Therefore, AgNWs with smaller diameters and larger lengths—that is, with higher aspect ratios—lead to the preparation of AgNW TCFs with lower sheet resistance and higher visible light transmittance. According to the results in Figure 9, 30 and 45 nm AgNWs exhibit higher aspect ratios compared to 20 nm AgNWs, which aligns with the findings in Figure 10, Figure 11 and Figure 12 and our inference. Comprehensively considering the aspect ratio advantage of 30 and 45 nm AgNW over 20 nm AgNW, as well as the lower haze of TCFs prepared with 30 nm AgNW and the lower sheet resistance of TCFs prepared with 45 nm AgNW, this study attempted to prepare AgNW ink by mixing 30 and 45 nm AgNW dispersions at different volume ratios. The sheet resistance, visible light transmittance, and haze of the prepared TCFs are presented in Figure 14. It is seen that when the volume ratio of 30 and 45 nm AgNWs is 2:1, AgNW TCFs exhibit higher visible light transmittance and lower haze, demonstrating superior optoelectrical properties with a sheet resistance of less than 50 Ω/sq, a visible light transmittance exceeding 92%, and a haze below 1.8%. The formation mechanism of this phenomenon may be attributed to the fact that a small amount of 45 nm AgNWs with a larger length increases the interconnection nodes between AgNWs, enhancing the “parallel connection” among them, while a large amount of 30 nm AgNWs with a thinner diameter ensures that the visible light transmittance and haze of TCFs remain unaffected.

4. Conclusions

In summary, AgNW TCFs have been successfully prepared by slot-die coating a specialized AgNW ink on the surface of PET substrate, while the AgNW ink was composed of CMC and PVA as film-forming aids and AgNWs as conductive materials. The influence of the coating height, the type of CMC, the amount of PVA, and the diameter and amount of AgNWs on the optoelectrical properties of AgNW TCFs were investigated in detail. The coating height and the amount of AgNWs directly affect the optoelectrical properties of AgNW TCFs by altering the quantity of AgNWs deposited on the PET surface. The CMC and PVA control the optoelectrical properties of AgNW TCFs by modifying the dispersibility of AgNWs in the AgNW ink and on the PET. The length of AgNWs has a significant impact on the sheet resistance of AgNW TCFs, while the diameter of AgNWs has a notable impact on the visible light transmittance and haze of TCFs. The combination of AgNWs with two different diameters can further enhance the optoelectrical properties of AgNW TCFs, and the effect of high aspect ratio AgNWs is more obvious. The suitable compositions of AgNW ink and process parameters of slot-die coating are coating height of 400 μm, the CMC type of V, the PVA volume of 1 mL, the AgNW volume of 1.5 mL, and the volume ratio of 30 and 45 nm AgNWs of 2:1, and the resultant AgNW TCFs exhibit superior optoelectrical properties. This work offers valuable insights for slot-die coating to large-scale produce AgNW TCFs for various optoelectronic devices.
Slot-die coating technology facilitates the large-scale and continuous production of AgNW TCFs, ensures their optoelectrical properties, reduces their cost, and enhances their potential applications in optoelectronic devices. For practical applications, alongside the cost and optoelectrical properties, the stability of AgNW TCFs is also crucial. The oxidation and electromigration of Ag are the primary reasons for the poor stability of AgNWs. Regarding how to prevent AgNW oxidation and Ag migration, our present work concerns the coating of Au on the surface of AgNWs to obtain airtight encapsulation and isolate it from contact with water and oxygen, which will lead to excellent stability for AgNWs.

Supplementary Materials

The following supporting information can be downloaded at https://www.mdpi.com/article/10.3390/coatings15010095/s1: Table S1. Specifications of different types of sodium carboxymethyl cellulose (CMC); Figure S1. UV-vis spectra of PET and AgNW TCFs (samples D2, E2, and F2 in Table 1); Figure S2. Photos of AgNW TCFs with different haze; Figure S3. SEM images of AgNW TCF prepared with the volume ratios of 30 and 45 nm AgNWs of 2:1.

Author Contributions

Conceptualization, J.S. and X.G.; methodology, J.S. and Y.H.; validation, Y.H., H.W. and K.C.; formal analysis, J.S.; investigation, Y.H., H.W. and K.C.; resources, X.G. and J.D.; data curation, J.S. and Y.H.; writing—original draft preparation, J.S.; writing—review and editing, X.G.; visualization, J.S.; supervision, X.G. and J.D.; project administration, X.G. and J.D.; funding acquisition, J.S., H.W., J.D. and X.G. All authors have read and agreed to the published version of the manuscript.

Funding

This research was funded by the Leading Talent R&D Program of Zhejiang Province of China (2024C01149).

Informed Consent Statement

Not applicable.

Data Availability Statement

The data that support the findings of this study are available on request from the corresponding author upon reasonable request.

Conflicts of Interest

Ye Hong is employed by Zhejiang X-Way Nano Technology Co., Ltd. and Haoyu Wang and Jianbao Ding are employed by Zhejiang Kechuang Advanced Materials Technology Co., Ltd. The remaining authors declare that the research was conducted in the absence of any commercial or financial relationships that could be construed as a potential conflict of interest.

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Coatings 15 00095 g001
Figure 1. Schematic diagram of the preparation principle of AgNW TCFs.
Figure 1. Schematic diagram of the preparation principle of AgNW TCFs.
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Figure 2. Sheet resistance (a), visible light transmittance (b), and haze (c) of AgNW TCFs with various coating heights.
Figure 2. Sheet resistance (a), visible light transmittance (b), and haze (c) of AgNW TCFs with various coating heights.
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Figure 3. SEM images (magnification 10,000×) of AgNW TCFs (samples A2–A7 in Table 1) slot-die coated with various coating heights.
Figure 3. SEM images (magnification 10,000×) of AgNW TCFs (samples A2–A7 in Table 1) slot-die coated with various coating heights.
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Figure 4. Sheet resistance (a), visible light transmittance (b), and haze (c) of AgNW TCFs with different types of CMC.
Figure 4. Sheet resistance (a), visible light transmittance (b), and haze (c) of AgNW TCFs with different types of CMC.
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Figure 5. EDS mapping results of AgNW TCFs (sample A3 in Table 1).
Figure 5. EDS mapping results of AgNW TCFs (sample A3 in Table 1).
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Figure 6. Box plot of AgNW TCFs’ sheet resistance (a), visible light transmittance (b), and haze (c) versus volume of PVA solution.
Figure 6. Box plot of AgNW TCFs’ sheet resistance (a), visible light transmittance (b), and haze (c) versus volume of PVA solution.
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Figure 7. SEM images (magnification 10,000×) of AgNWs with various diameters.
Figure 7. SEM images (magnification 10,000×) of AgNWs with various diameters.
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Figure 8. TEM images of AgNWs with various diameters.
Figure 8. TEM images of AgNWs with various diameters.
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Figure 9. Diameter distribution chart of 20 nm (a), 30 nm (b), and 45 nm (c) AgNWs and length distribution chart of 20 nm (d), 30 nm (e), and 45 nm (f) AgNWs.
Figure 9. Diameter distribution chart of 20 nm (a), 30 nm (b), and 45 nm (c) AgNWs and length distribution chart of 20 nm (d), 30 nm (e), and 45 nm (f) AgNWs.
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Figure 10. Sheet resistance (a), visible light transmittance (b), and haze (c) of AgNW TCFs with various volumes of 20 nm AgNWs.
Figure 10. Sheet resistance (a), visible light transmittance (b), and haze (c) of AgNW TCFs with various volumes of 20 nm AgNWs.
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Figure 11. Sheet resistance (a), visible light transmittance (b), and haze (c) of AgNW TCFs with various volumes of 30 nm AgNWs.
Figure 11. Sheet resistance (a), visible light transmittance (b), and haze (c) of AgNW TCFs with various volumes of 30 nm AgNWs.
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Figure 12. Sheet resistance (a), visible light transmittance (b), and haze (c) of AgNW TCFs with various volumes of 45 nm AgNWs.
Figure 12. Sheet resistance (a), visible light transmittance (b), and haze (c) of AgNW TCFs with various volumes of 45 nm AgNWs.
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Figure 13. SEM images (magnification 10,000×) of AgNW TCFs slot-die coated with various volumes of 20 nm AgNW.
Figure 13. SEM images (magnification 10,000×) of AgNW TCFs slot-die coated with various volumes of 20 nm AgNW.
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Figure 14. Sheet resistance (a), visible light transmittance (b), and haze (c) of AgNW TCFs with various volume ratios of 30 and 45 nm AgNWs.
Figure 14. Sheet resistance (a), visible light transmittance (b), and haze (c) of AgNW TCFs with various volume ratios of 30 and 45 nm AgNWs.
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Table 1. Process parameters and ink formula of slot-die coating for AgNW TCFs.
Table 1. Process parameters and ink formula of slot-die coating for AgNW TCFs.
SampleCoating Height, h (μm)Type of CMCVCMC 1 (mL)VPVA 2 (mL)Diameter of AgNW (nm)VAgNW 3 (mL)
A1300V102202.5
A2350V102202.5
A3400V102202.5
A4450V102202.5
A5500V102202.5
A6550V102202.5
A7600V102202.5
B1400I102202.5
B2400II102202.5
B3400III102202.5
B4400IV102202.5
B5400V102202.5
C1400V103202.5
C2400V102202.5
C3400V101202.5
C4400V100202.5
D1400V101203.0
D2400V101202.5
D3400V101202.0
D4400V101201.5
D5400V101201.0
E1400V101303.0
E2400V101302.5
E3400V101302.0
E4400V101301.5
E5400V101301.0
F1400V101453.0
F2400V101452.5
F3400V101452.0
F4400V101451.5
F5400V101451.0
G1400V101450.5
301.0
G2400V101450.75
300.75
G3400V101451.0
300.5
1 VCMC means the volume of CMC/H2O solution, and the concentration of CMC solution is 10 mg/mL. 2 VPVA means the volume of PVA/H2O solution, and the concentration of PVA solution is 10 mg/mL. 3 VAgNW means the volume of AgNW/EtOH solution, and the concentration of AgNW suspension is 10 mg/mL.
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MDPI and ACS Style

Shan, J.; Hong, Y.; Wang, H.; Cui, K.; Ding, J.; Guo, X. Preparation and Optoelectrical Property of Silver Nanowire Transparent Conductive Film via Slot Die Coating. Coatings 2025, 15, 95. https://doi.org/10.3390/coatings15010095

AMA Style

Shan J, Hong Y, Wang H, Cui K, Ding J, Guo X. Preparation and Optoelectrical Property of Silver Nanowire Transparent Conductive Film via Slot Die Coating. Coatings. 2025; 15(1):95. https://doi.org/10.3390/coatings15010095

Chicago/Turabian Style

Shan, Jiaqi, Ye Hong, Haoyu Wang, Kaixuan Cui, Jianbao Ding, and Xingzhong Guo. 2025. "Preparation and Optoelectrical Property of Silver Nanowire Transparent Conductive Film via Slot Die Coating" Coatings 15, no. 1: 95. https://doi.org/10.3390/coatings15010095

APA Style

Shan, J., Hong, Y., Wang, H., Cui, K., Ding, J., & Guo, X. (2025). Preparation and Optoelectrical Property of Silver Nanowire Transparent Conductive Film via Slot Die Coating. Coatings, 15(1), 95. https://doi.org/10.3390/coatings15010095

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