Chow, H.-C.; Lee, B.-W.; Cheng, S.-Y.; Huang, Y.-H.; Chang, R.-D.
A Surface Potential Model for Metal-Oxide-Semiconductor Transistors Operating near the Threshold Voltage. Electronics 2023, 12, 4242.
https://doi.org/10.3390/electronics12204242
AMA Style
Chow H-C, Lee B-W, Cheng S-Y, Huang Y-H, Chang R-D.
A Surface Potential Model for Metal-Oxide-Semiconductor Transistors Operating near the Threshold Voltage. Electronics. 2023; 12(20):4242.
https://doi.org/10.3390/electronics12204242
Chicago/Turabian Style
Chow, Hwang-Cherng, Bo-Wen Lee, Shang-Ying Cheng, Yung-Hsuan Huang, and Ruey-Dar Chang.
2023. "A Surface Potential Model for Metal-Oxide-Semiconductor Transistors Operating near the Threshold Voltage" Electronics 12, no. 20: 4242.
https://doi.org/10.3390/electronics12204242
APA Style
Chow, H. -C., Lee, B. -W., Cheng, S. -Y., Huang, Y. -H., & Chang, R. -D.
(2023). A Surface Potential Model for Metal-Oxide-Semiconductor Transistors Operating near the Threshold Voltage. Electronics, 12(20), 4242.
https://doi.org/10.3390/electronics12204242