Patil, P.D.; Ghosh, S.; Wasala, M.; Lei, S.; Vajtai, R.; Ajayan, P.M.; Talapatra, S.
Electric Double Layer Field-Effect Transistors Using Two-Dimensional (2D) Layers of Copper Indium Selenide (CuIn7Se11). Electronics 2019, 8, 645.
https://doi.org/10.3390/electronics8060645
AMA Style
Patil PD, Ghosh S, Wasala M, Lei S, Vajtai R, Ajayan PM, Talapatra S.
Electric Double Layer Field-Effect Transistors Using Two-Dimensional (2D) Layers of Copper Indium Selenide (CuIn7Se11). Electronics. 2019; 8(6):645.
https://doi.org/10.3390/electronics8060645
Chicago/Turabian Style
Patil, Prasanna D., Sujoy Ghosh, Milinda Wasala, Sidong Lei, Robert Vajtai, Pulickel M. Ajayan, and Saikat Talapatra.
2019. "Electric Double Layer Field-Effect Transistors Using Two-Dimensional (2D) Layers of Copper Indium Selenide (CuIn7Se11)" Electronics 8, no. 6: 645.
https://doi.org/10.3390/electronics8060645
APA Style
Patil, P. D., Ghosh, S., Wasala, M., Lei, S., Vajtai, R., Ajayan, P. M., & Talapatra, S.
(2019). Electric Double Layer Field-Effect Transistors Using Two-Dimensional (2D) Layers of Copper Indium Selenide (CuIn7Se11). Electronics, 8(6), 645.
https://doi.org/10.3390/electronics8060645