3.1. Sensitivity to Model Completeness
Six CR models, shown in
Table 7, are compared to demonstrate the sensitivity of the line ratio analysis to the scope and completeness of the atomic datasets used in the model. Base model A utilizes BSR, Biagi, and Puech collisional data from LXCAT and Van Regemorter cross-sections [
38] using NIST oscillator strengths (NIST-VR). LANL and FAC refer to collisional data by LANL code and FAC code. MCDHF-VR/LANL-VR/FAC-VR refers to Van Regemorter collisional data using the MCDHF/LANL/FAC oscillator strengths. MCDHF-GF/LANL-GF/FAC-GF refers to the MCDHF/LANL/FAC oscillator strengths to be used in addition to the NIST oscillator strengths. Model B adds LANL/FAC collisional data in addition to the base model A. Model C adds oscillator strengths from MCDHF and LANL code to model B. Model D adds oscillator strengths from the FAC code to model C. Model E utilizes the base model A and adds only Van Regemorter collisional data using MCDHF/LANL/FAC oscillator strengths. Model F is our final and most complete model, as well as includes the LANL/FAC collisional data and Van Regemorter data using the available oscillator strengths.
The calculated line ratios of 425.9 nm/750.4 nm analyzed by Boffard et al. [
1] are compared to demonstrate the sensitivities of the CR model to the model completeness. The 425.9 nm line corresponds to the transition between 3p
(2P
)4s
(Paschen 1s
) and 3p
(
)5p
(Paschen 3p
) states. The upper level Paschen 3p
level is populated from the ground state, and the cross-section is provided by the Puech data. The 750.4 nm line corresponds to the transition between 3p
(2P
)4s
(Paschen 1s
) and 3p
(
)4p
(Paschen 2p
) states. The upper-level Paschen 2p
level is populated from the ground state, and the cross-section is provided by the BSR data. The cross-sections to the upper levels 3p
and 2p
from the ground state stay the same for all 6 models; however, the line ratio of 425.9 nm/750.4 nm changes significantly, as the additional transitions to other levels are included in the model. In
Figure 2, the line ratios are plotted as a function of the electron temperature T
and electron density N
of 10
cm
. The addition of LANL/FAC collisional data in model B do not change the line ratio of 425.9 nm/750.4 nm significantly. However, when the oscillator strengths (i.e., spontaneous emission rates) of the MCDHF/LANL/FAC data are added to the model, the ratio decreased by more than a factor of 2. As the additional oscillator strengths are included for Van Regemorter rates, the ratio decreased even further, and the results are closer to the measured data [
41,
42] in
Section 4.1 and to the calculations performed using the measured optical emission cross-sections by Boffard et al. [
1]
The comparison in
Figure 2 shows the importance of including all relevant spontaneous emission rates when calculating the line ratios at the coronal conditions, such as N
= 10
cm
considered here.
Figure 3 shows quite different trends in the line ratio comparisons at N
of 10
cm
, the highest density case of this investigation. The line ratio is much closer among different models, as collisions make the level population distributions deviate from the coronal limit by increasing the collisional depopulation to be comparable with the spontaneous emission rates. All five models (model B–model F) are closer to the measured data [
41,
42] in
Section 4.1, slightly below the coronal calculations of Boffard et al. [
1].
A CR model should converge to a coronal limit if N
is sufficiently low and the line ratio is independent of N
. However, as N
increases, the line ratio deviates from the ratio at the coronal limit, as demonstrated for the line ratio of Ar 357.2 nm/Ar 425.9 nm in
Figure 4. The transition at Ar 357.2 nm corresponds to the transition between the 3p
(2P
)4s
(Paschen 1s
) and p
(2P
)7p
(Paschen 5p
) states. Unfortunately, there is no reliable collisional data from the ground state to the 5p
level, except for the measured optical emission cross-section for the transition from the 5p
level to the 1s
level. The optical emission cross-section is 4.6 × 10
cm
at 25 eV [
35]. The direct excitation cross-section is related to the sum of all optical emission cross-sections of transitions originating from the 5p
level, as follows. The branching ratio of the 357.2 nm transition is roughly 1/3; hence, a factor of 3 may be chosen as the apparent cross-section of the 5p
level. Then, the apparent cross-section is the sum of the direct cross-section and cascade contribution, and the direct cross-section should be greater than 4.6 × 10
cm
but smaller than 3 times 4.6 × 10
cm
. Hence, the BSR cross-section was scaled to be approximately 8.5 × 10
cm
at 25 eV was used. The line ratios are compared with the measurements and calculations by Boffard et al. [
1] in
Figure 4 as a function of Ne. All 6 models showed very large differences in the results of the line ratio of Ar 357.2 nm/Ar 425.9 nm at T
= 2 eV. The decreasing trend of the line ratio with N
agrees with the Boffard data.
The most complete model F agrees best with the Boffard data, although the absolute value differs by approximately 20–30%. This is likely to be attributed to the uncertainties in the spontaneous emission rates, as well as collisional rates involving the 5p level, as most transition data involving this level are from the FAC code. Although quite sensitive to N, the line ratios are found to be insensitive to T under 4 eV, the maximum temperature considered in the simulations. In the following results, we use the most complete model F as our model for discussion.
3.2. Radiation Trapping Effects
The effects of radiation trapping on the line intensities and ratios are discussed in the context of the measured pressure dependence of optical emission cross-sections for the selected levels of Ar by Boffard et al. [
1]. Radiation trapping for Paschen 2p
− 1s
lines is attributed to the large number of atoms in the 1s metastable and resonance levels, direct trapping from the ground state, or indirect contributions due to cascades from the higher resonance levels. It was suggested to use Ar np
and np
levels (both J = 0) to avoid the radiation trapping effects because the optical excitation from the metastable state is weak.
The radiation trapping effects are functions of parameters, such as atomic density, thermodynamic conditions, plasma size, line shapes, etc. To investigate the radiation trapping effects, we assume the following: First, the atomic density or gas pressure is the most important parameter influencing the trapping effects, and it is fixed at 10 cm in our comparison. Second, different N and T will produce different lower level population distributions; therefore, we compares the lines for the same density and temperature to maintain the lower-level population the same for comparison. Third, the length of the line of sight increases the optical depth and, hence, the radiation trapping effect linearly, which allows the comparison of the radiation trapping effect in a straightforward manner. Finally, different line shape profiles can modify the optical depths and, hence, the radiation trapping effect. In this investigation, the line shape is calculated for the Doppler profile and is, therefore, fixed.
Figure 5 and
Figure 6 compare the ratios of the line intensities of 451.1 nm and 750.4 nm with (10 cm plasma size) and without the radiation trapping effect as a function of T
for the electron densities of 10
- 10
cm
. If the radiation trapping effects are insignificant, the ratios of line intensity for the 10 cm case and the optically thick case will be close to unity. The ratios deviate from 1 more significantly for 451.1 nm emitted from the 2p
level than for 750.4 nm emitted from the 2p
level for N
below 10
cm
. A slight T
dependence on the radiation trapping effects was observed in the case of 451.1 nm, and the lower T
ratios deviated further away from unity. As N
increases further, collisions change the ground and metastable level population significantly, and the combined effects drive the line intensities away from the coronal limit and the optically thin case.
In OES analysis, the radiation trapping effects are usually considered with the gas pressure. It is a dominant factor, but the radiation trapping effects should be considered with all factors that influence the population kinetics, for example, gas density, N, and T, as well as the length of the line of sight. In addition, if wall recombination and quenching, or two-temperature distribution effects are combined, the radiation trapping effects may be even more dramatic because these effects modify the lower-level population distribution significantly.
3.3. Non-Maxwellian Electron Energy Distributions
Plasmas are frequently found to deviate from a single temperature Maxwellian electron energy distribution. It is useful to understand how line intensities change with non-thermal electron energy distribution functions. We compares two cases: (1) 99% bulk T of 1–4 eV and 1% of 10 eV non-thermal electrons and (2) 60% bulk T of 1–4 eV and 40 % of 0.1 eV cold electrons for different electron densities. Radiation trapping was not considered. The first example involves the observation of the effects of 1% 10 eV non-thermal electrons on line ratios of 99% 1–4 eV electron plasmas for a range of electron densities.
Figure 7 shows the ratios of the enhancement due to hot electrons. The ratios of the two lines in the analysis can remain the same if the two line intensities are enhanced by the same factor. In this case, the ratio of the enhancement is close to unity; therefore, the line ratios can be used as a robust diagnostic of the bulk plasma conditions regardless of the existence of small fractions of Non-Maxwellian electrons. Comparing the two line ratios, 357.2 nm/425.9 nm and 425.9 nm/750.4 nm, we find that the former is rather insensitive to the addition of 1% hot electrons, whereas the latter is modified significantly at 1–2 eV. The changes in the ratio become smaller as N
becomes higher.
In summary, if N is high and T is high, the effect of 1% 10 eV electrons will be negligible, and the line ratios can be used as a bulk temperature diagnostic. The commonly used line ratios of 425.9 nm/750.4 nm are shown to be more sensitive to the addition of hot electrons; hence, one should be cautious when using this line ratio as a bulk temperature diagnostics. Investigation of the population mechanisms revealed that the cascades from high-lying states are significant for low-lying states, such as 2p, the upper level of 750.4 nm. The population cascades increase the enhancement significantly at low temperatures, leading to a large enhancement in the line intensity and deviation from the single T line ratio of 425.9 nm/750.4 nm.
Figure 8 shows that the ratios of line intensity ratios are rather insensitive to the 40% cold electrons when N
is sufficiently low. Contrary to the expectation that the line intensities will be reduced due to lower collisionalities, the line intensities are enhanced in the case of 2–4 eV. The ground state population is found to have significantly changed by adding 40% cold electrons in the case of 2–4 eV, where the ground state of neutral atoms is mostly ionized (without wall effects). With the cold electrons, the collisional ionization rate is 40% smaller while radiative recombination and dielectric recombination are higher, which leads to a lower charge state distribution and, hence, higher ground-state population of neutral atoms. Therefore, reduced high-lying and ionized state populations result in reduced cascades from those states and increase the validity of the coronal models for line ratio analysis. The modified line ratios with 40% cold electrons are lower than that in the single temperature case, whereas those with 1% 10 eV non-thermal electrons are generally higher than that in the single temperature case.
3.4. Wall Recombination and Quenching Effects
All the investigations in the previous subsections are performed without considering the boundaries, that is, the wall effects. However, processing plasmas is unique in the sense that the steady-state operation of the plasma is sustained by externally applied fields compensatory energy and particle losses by the wall or boundaries. The main function of the wall in terms of population kinetics is to provide a substantial amount of recombination to the plasma. In general, argon plasmas at 2 eV and N of 10 cm should ionize substantially to the singly ionized system considering the atomic ionization and recombination rate coefficients. However, Langmuir probe measurements show that the degree of ionization is as low as 1%.
This introduces a difficulty in building a general CR model because the charge balance should be coupled with the diffusion of atoms to the wall and the spatial distribution of plasma conditions established by wall contact [
7,
10]. Because the diffusion and spatial behavior of plasmas is out of the scope of this work, we focus on the effect of wall recombination on the line ratio analysis. The main influence is the reduction in the charge state population; consequently, the cascades from the ionized states through Rydberg or high-lying states are significantly reduced, as well. To investigate the effect of wall recombination on the line ratios, we added an ad-hoc wall recombination rate to the total recombination rate to make the charge states comparable to those from the Langmuir probe measurements.
As expected from the fact that the wall recombination reduces the ionization, which in turn increases the ground state population, the modified line ratios have similar trends to those in the case of 40% cold electrons, as shown in
Figure 9. There is a slight difference in that the enhancement is similar for all lines because only the ground state population changes, whereas, with the 40% cold electrons, the collisional rates change according to the bulk electron temperatures. The ratio of line intensity ratios will be close to unity if the wall effects are negligible. As shown in
Figure 9, the commonly used line ratios of 357.2 nm/425.9 nm and 425.9 nm/750.4 nm are not significantly affected by wall recombination for low N
cases, where the coronal approximation is relatively good.
Additionally, it is noted that the wall contact changes the metastable population distributions. Metastable state populations play an important role in stepwise excitation and ionization as N increases. Therefore, the quenching of the metastable population distribution could be very important in line ratio analysis. The wall quenching rate is assumed to be the same as the wall recombination rate, assuming that the wall recombination and quenching rates are a function of the diffusion velocity of particles regardless of their quantum state in this comparison. The results show that the quenching of metastable states did not result in any significantly greater difference than the wall recombination. The line ratios were modified in the same way as that in the case of wall recombination for 357.2 nm, 425.9 nm, and 750.4 nm. It is cautioned that lines sensitive to metastable populations are likely to be affected to a greater extent by wall quenching.