2.1. DFT Calculations
Layered cathode materials are poised to play a pivotal role in the advancement of AZIBs, attributed to their inherent potential for high energy storage capacities. However, the practical application of these materials is significantly hindered by the sluggish diffusion kinetics of Zn2+, a phenomenon often precipitated by the structural collapse of the cathode material during electrochemical cycling. In an effort to circumvent this challenge, the strategic integration of Ods within the vanadium oxide (VO) layers has been identified as a promising approach to reinforce structural stability and enhance Zn2+ diffusion kinetics.
To rigorously evaluate the impact of Od incorporation on the structural and electrochemical performance of NVO cathodes, DFT calculations were undertaken. These computational analyses aimed to elucidate the variations in electronic structure of NVO before and after the introduction of Ods, and further assess how these oxygen vacancies alter the electronic density of states.
Figure 1a–c delineates the schematic representations of the conventional cell structures for three distinct configurations: the pristine NVO structure, NVO-O
d, and the configuration of NVO-O
d subsequent to the incorporation of Zn
2+ ions (Zn-NVO
d). Initially, to ascertain the impact of O
ds on the electrical conductivity of these systems, density of states (DOS) calculations were performed. The DOS analysis, illustrated in
Figure 1d, reveals that the band gap of pristine NVO is quantified at 1.49 eV. Upon the introduction of O
ds, there is a significant reduction in the band gap to 0.185 eV, highlighting the enhanced metallic character of NVO-O
d which is indicative of improved conductivity. This enhancement in conductivity is attributed to the structural modifications induced by the incorporation of O
ds into the NVO matrix, which not only facilitates the insertion and extraction of Zn
2+ ions but also provides additional electrons to augment the capacity.
Subsequent to the embedding of Zn
2+ into NVO-O
d, the band gap is observed to vanish, with the emergence of a new peak at the Fermi level, as depicted in
Figure 1e. The projected density of states (PDOSs) analysis for the three systems elucidates distinct variations in the state density distributions, particularly around the Fermi level. Notably, the incorporation of Zn
2+ into NVO-O
d results in the Fermi level being shifted below 0 eV, with discernible states associated with vanadium (V) evident at the Fermi level. The introduction of O
ds into the NVO framework notably influences electron transfer processes related to V; the embedding of Zn
2+ ions transforms the material’s character to metallic, thereby enhancing electron mobility within the material. This series of observations underscores the critical role of O
ds in modulating the electronic structure and optimizing the electrochemical performance of NVO-based cathodes for aqueous zinc-ion batteries.
2.2. Composition and Structural Characterization
Utilizing the reductive capabilities of thiourea in acidic environments, nanosheets of oxygen-deficient NVOd were synthesized via a straightforward water bath methodology, employing NH4VO3 as the starting material. The decomposition of thiourea under heated acidic conditions results in the generation of ammonia, carbon dioxide, and hydrogen sulfide (H2S) gas through a hydrolysis reaction. The evolution of H2S gas during this process facilitates the introduction of Ods into the forming NVOd, acting as Lewis acid sites. To explore the effect of varying thiourea concentrations, different molar quantities of thiourea (2, 3, and 4 mmol) were utilized, resulting in the synthesis of distinct batches of NVOd, designated as NVOd-2 (with 2 mmol thiourea), NVOd-3 (with 3 mmol thiourea), and NVOd-4 (with 4 mmol thiourea). For comparative purposes, a control batch of NVO material was also prepared under identical conditions but without the addition of thiourea.
The crystalline structure of the synthesized (NH
4)
2V
10O
25·8H
2O was characterized using X-ray diffraction (XRD) analysis. The XRD patterns for the derived NVO
d and NH
4V
3O
8 specimens are presented in
Figure 2a. Analysis revealed that the diffraction peaks corresponding to NVO
d-2, NVO
d-3, and NVO
d-4 samples align with the (001), (003), (004), (020), and (420) planes, as per the standard powder diffraction file (PDF) card for (NH
4)
2V
10O
25·8H
2O (JCPDS number: 26-0097), indicating a pure phase of NVO
d with no detectable impurities resulting from the thiourea addition.
The transformation from NH4V3O8 to (NH4)2V10O25 represents a critical phase in the synthesis process of NVOd materials, characterized by a complex interplay of structural and electronic modifications. This transition is fundamentally driven by the extraction of oxygen atoms from the lattice of NH4V3O8, resulting in the emergence of defect sites enriched with excess electrons. These surplus electrons play a significant role in augmenting the delocalized electron cloud, particularly increasing the electron density in proximity to vanadium (V) sites. Such an enhancement in electron density around V atoms triggers a reorganization of VO structural units, eventually leading to the formation of the (NH4)2V10O25 structure. This reorganization is not merely a rearrangement but is accompanied by the reduction of V atoms from a higher to a lower oxidation state. The creation of oxygen vacancies plays a pivotal role in this process, as it directly contributes to the increased electron density around the V atoms, facilitating their reduction. Consequently, this leads to the stabilization of the (NH4)2V10O25 structure.
In addition, a detailed examination of the XRD spectra, particularly around the (001) diffraction peak, is illustrated in
Figure 2b. The observed shift of the (001) diffraction peak towards lower angles with an increase in thiourea concentration suggests an expansion in the interlayer spacing of the material. This phenomenon indicates that the introduction of O
d via thiourea not only modifies the internal crystal structure but also induces a structural rearrangement that impacts the interlayer distance, facilitating enhanced electrochemical functionality.
Electron paramagnetic resonance (EPR) spectroscopy was utilized to ascertain the presence of O
ds within the synthesized materials, as depicted in
Figure 2c. The distinct sharp signal observed in the EPR spectrum of NVO
d can be attributed to electrons localized at defect sites, with the resonance corresponding to a g-value of approximately 2.02, indicative of O
ds. Notably, the intensity of this signal—and hence the concentration of oxygen vacancies—shows a direct correlation with the quantity of thiourea used during the synthesis process. In stark contrast, samples of NVO prepared in the absence of thiourea exhibited no discernible Lorentzian EPR signals, unequivocally indicating a lack of detectable O
ds within these materials. This observation underscores the pivotal role of thiourea as a facilitator of structural transformation, specifically through the induction of oxygen vacancies. Such vacancies are instrumental in modifying the electronic structure and enhancing the functional properties of the material, as evidenced by the pronounced EPR signals in thiourea-treated samples. This finding corroborates the hypothesis that thiourea not only acts as a reducing agent but also as a structural modifier, introducing beneficial defects that can significantly influence the material’s electrochemical performance.
The surface morphology of the synthesized materials was meticulously examined using scanning electron microscopy (SEM). The SEM images, as presented in
Figure 3a–i, illustrate the NVO
d samples with varying degrees of oxygen deficiency (NVO
d-2, NVO
d-3, and NVO
d-4) at multiple magnifications. These depictions reveal that the NVO
d samples consist of nanosheets with irregular shapes, predominantly featuring thicknesses within the 70 to 90 nm range. Notably, a morphological evolution is observed as the oxygen deficiency level increases; the samples exhibit a transition from voluminous to more fragmented nanosheets, while the thickness of these structures remains relatively constant across the variants.
To further elucidate the compositional homogeneity of the synthesized NVO
d nanosheets, energy-dispersive X-ray spectroscopy (EDS) mapping analysis was conducted. The EDS results, illustrated in
Figure 3j, confirm the uniform distribution of nitrogen (N), oxygen (O), and V elements across the nanosheets. Notably, sulfur (S) was not detected in the EDS analysis, indicating the effective incorporation of oxygen defects without introducing sulfur impurities into the material. This comprehensive characterization not only confirms the successful synthesis of NVO
d with specific morphological traits but also underscores the homogeneity of elemental distribution, which is crucial for the consistent electrochemical performance of these materials in AZIBs.
Furthermore, transmission electron microscopy (TEM) analysis was conducted to ascertain the morphology of the NVO
d system. The outcomes of this TEM analysis are depicted in
Figure 4. As illustrated in
Figure 4, the TEM results unambiguously confirmed the presence of a nanosheet structure, which is in alignment with the SEM findings. This congruence between TEM and SEM analyses reinforces the accuracy of our morphological characterization of the material.
The comprehensive X-ray photoelectron spectroscopy (XPS) analysis depicted in
Figure 5a confirms the presence of V, O, N, and carbon (C) elements in both NVO and NVO
d samples, with S elements conspicuously absent, as demonstrated in
Figure 5b. This observation aligns with the findings obtained from EDS mapping analysis, further corroborating the purity of the synthesized materials.
Figure 5c showcases the XPS spectra of the V 2p for both NVO and NVO
d-3 samples. The incorporation of oxygen O
d is evidenced by a valence state transition of vanadium, with a partial reduction from V
5+ to V
4+. This transition is attributed to the reduction in the number of neighboring oxygen atoms surrounding the vanadium atoms, leading to an increased electron density in the vicinity of V. Such a phenomenon is indicative of the structural modifications within the VO framework prompted by the integration of O
ds, which not only facilitates the embedding and de-embedding processes of Zn
2+ ions but also contributes additional electrons, thereby augmenting the material’s capacity.
Further elucidating the structural and compositional nuances,
Figure 5d presents the XPS spectra of the O 1s for both NVO and NVO
d-3. The peak associated with lattice oxygen (V-O) in NVO is recorded at 530.18 eV. In contrast, for NVO
d-3, this peak shifts slightly to 530.28 eV, with the peak indicative of O
d observed at 531.28 eV. This subtle shift not only confirms the successful introduction of O
ds but also highlights the resultant structural rearrangement and its implications on the electronic environment surrounding the V centers.
2.3. Electrochemical Properties Characterization
Ods can serve as pivotal contributors to the charge transfer process, offering numerous jump sites and active sites that are instrumental in defining the structural stability of cathode materials. To evaluate the influence of Ods on electrochemical performance, a zinc//NVOd battery was constructed, utilizing zinc foil as the anode and 3 M Zn(CF3SO3)2 as the electrolyte. The electrochemical properties of this assembly were subsequently investigated to ascertain the impact of Ods on the battery’s performance metrics.
Figure 6a illustrates the specific capacities of the electrode materials NVO
d-2, NVO
d-3, NVO
d-4, and NVO, evaluated at a current density of 0.2 A g
−1. It is observed that an increase in O
d content correlates with enhancements in both the specific capacity and cycling stability of the electrodes. However, this trend reverses when the O
d content surpasses a certain threshold, leading to a reduction in electrode capacity. This decline in performance, particularly noted for NVO
d-4 which demonstrated a capacity of 386 mAh g
−1 at 0.2 A g
−1, can be attributed to structural degradation resulting from an overabundance of O
ds, underscoring the critical balance required in optimizing O
d levels for improved electrochemical performance.
The investigation into the electrochemical behavior of NVO
d materials enriched with O
ds reveals a superior performance compared to pristine NVO materials. This enhancement suggests that O
ds play a vital role in augmenting the electrochemical attributes of ammonium vanadate-based cathodes. Specifically, the NVO
d-3 cathode distinguishes itself by delivering an exceptional initial discharge capacity of over 458.3 mAh g
−1 at a current density of 0.2 A g
−1. This capacity significantly surpasses those of several previously reported AZIB cathodes, including VO
2 (357 mAh g
−1) [
32], Na
0.33V
2O
5 (367.1 mAh g
−1) [
33], Zn
2(OH)VO
4 (204 mAh g
−1) [
34], and other ammonium vanadate variants such as (NH
4)
2V
4O
9 (378 mAh g
−1) [
35] and (NH
4)
2V
6O
16 (323.5 mAh g
−1) [
36]. Remarkably, after 15 cycles, the NVO
d-3 cathode achieved a peak discharge capacity of 479.3 mAh g
−1. Moreover, after enduring 50 cycles, it maintained a capacity retention rate of approximately 90.1%, underscoring its exceptional durability and performance consistency in AZIB applications.
Figure 6b–d present the galvanostatic charge–discharge profiles of NVO
d-2, NVO
d-3, and NVO
d-4, each tested at a current density of 0.2 A g
−1. Notably, all profiles feature two distinct, relatively flat charge–discharge plateaus, indicative of the complex electrochemical processes underway. These plateaus are attributed to the sequential reactions occurring within the NVO
d electrode during the charge–discharge cycle, specifically the embedding and de-embedding of Zn
2+ ions coupled with the electron redox reactions.
Moreover, subsequent to the initial cycle, the profiles of these curves and their associated charge–discharge plateaus exhibit remarkable consistency across subsequent cycles, demonstrating a high degree of reproducibility with minimal deviation. Among the variants, NVOd-4 exhibits the most pronounced curve overlap, albeit with the lowest discharge capacity. Conversely, NVOd-2, while showing less pronounced curve overlap, achieves a slightly higher capacity than NVOd-4. NVOd-3 stands out by offering an optimal balance of high capacity and stability, showcasing its efficacy in maintaining performance across cycles. This observation underscores the critical interplay between structural integrity and electrochemical functionality within the NVOd materials, highlighting the nuanced impact of Od concentration on the overall performance of ammonium vanadate cathodes.
Figure 7a delineates the rate capabilities of NVO
d-2, NVO
d-3, and NVO
d-4 across a current density range from 0.1 to 10 A g
−1, while
Figure 7b details the rate performance of pristine NVO within the same current density spectrum. Comparative analysis of the data presented in these figures reveals that NVO
d variants manifest a significantly enhanced rate performance in comparison to pristine NVO. Notably, NVO
d-3 demonstrates remarkable capacities at varying current densities, achieving 476.4, 461.2, 427.8, 400.2, 340.8, 274.1, 188.7, and 148.7 mAh g
−1 at current densities of 0.1, 0.2, 0.5, 1, 3, 5, 8, and 10 A g
−1, respectively. In contrast, NVO exhibits capacities of 299.7, 294.4, 281.5, 250.4, 96.2, and 13.8 mAh g
−1 at 0.1, 0.2, 0.5, 1, 3, and 5 A g
−1, respectively, indicating a pronounced disparity in performance.
Both NVOd-2 and NVOd-4 display reversible specific capacities that are lower than those of NVOd-3 at all tested current densities. Specifically, NVOd-2 presents capacities of 449.3, 441.4, 420.1, 377.4, 233.2, 109.4, 38.1, and 12.3 mAh g−1, while NVOd-4 exhibits capacities of 449.1, 440.3, 420.1, 400.2, 343.3, 275.4, 165.4, and 101.3 mAh g−1 at 0.1, 0.2, 0.5, 1, 3, 5, 8, and 10 A g−1, respectively. Upon reverting the current density back to 0.1 A g−1, all three materials demonstrate the ability to recover to their initial capacity values. Remarkably, the Zn//NVOd-3 battery sustains a high capacity of 465.2 mAh g−1 upon this return to the baseline current density, significantly outstripping the Zn//NVO, which registers a capacity of 304.2 mAh g−1. The superior rate capability of NVOd-3 underscores the beneficial impact of strategically introduced defects, which evidently enhance the kinetics of Zn2+ embedding and de-embedding.
Furthermore, the long-term cycling performance of NVO
d-2, NVO
d-3, NVO
d-4, and pristine NVO was assessed, with the findings presented in
Figure 8. These evaluations were conducted at a rigorous current density of 10 A g
−1 to test the endurance of the materials under high-rate conditions. Notably, NVO
d-3 initiated the test with an initial capacity of 198 mAh g
−1. This capacity observed a decrement during the initial cycles but reached a stable capacity of 169 mAh g
−1 after the first 10 cycles. Impressively, after 1500 cycles, NVO
d-3 maintained a capacity retention of 65.4% relative to its stabilized capacity, highlighting its durability and resilience over extended cycling.
In contrast, pristine NVO started with an initial capacity of less than 100 mAh g−1, underlining a significant disparity in performance when compared to the NVOd variants. While both NVOd-2 and NVOd-4 exhibited promising initial capacities exceeding 250 mAh g−1, they suffered a precipitous decline to merely 30% of their initial capacities after 400 cycles, highlighting challenges in maintaining long-term stability. Among the materials tested, NVOd-3 distinguished itself by demonstrating a commendable balance of high reversible specific capacity and sustained cycle stability.
To further investigate the electrochemical reaction mechanisms underpinning its performance, cyclic voltammetry (CV) tests were executed using an electrochemical workstation across a voltage window of 0.2 to 1.6 V, employing scan rates of 0.1, 0.2, 0.4, 0.6, and 0.8 mV s
−1, as depicted in
Figure 9a,d,g. The CV results elucidate that an increase in the scan rate leads to enhanced polarization, which in turn precipitates a discernible shift in the oxidation and reduction peaks. Specifically, the oxidation peaks are observed to migrate towards higher voltages, while the reduction peaks shift towards lower voltages, indicating kinetic limitations within the electrochemical processes. Despite these shifts, the overall morphology of the CV curves remains consistent across the various scan rates.
The peak current density (
i) and the scan rate (
v) are governed by the following formulas, used to quantify the influence of capacitance and diffusion control on the overall capacitance:
where the value of
b reflects the degree to which the electrochemical reaction is controlled by diffusion or capacitance. Generally, when
b approaches 0.5, it indicates a typical diffusion-controlled process, and when
b approaches 1, it suggests pseudocapacitive-dominated behavior. As shown in
Figure 9b,e,h, the characteristic peak b values for NVO
d-2, NVO
d-3, and NVO
d-4 lie between 0.5 and 1, indicating contributions from both mechanisms, with pseudocapacitance playing a dominant role. Some peak values are largely influenced by capacitive control, approaching 1.
As delineated in
Figure 9c,f,i, the analysis of pseudocapacitive contributions for NVO
d-2, NVO
d-3, and NVO
d-4 at a scan rate of 0.8 mV s
−1 reveals contribution rates of 70%, 92%, and 99%, respectively. Furthermore,
Figure 10a,c,e highlight the variation in pseudocapacitive contribution rates of NVO
d-2, NVO
d-3, and NVO
d-4 across scan rates ranging from 0.1 to 0.8 mV s
−1. For NVO
d-2, the capacitive contribution escalates from 41% to 70%, for NVO
d-3, it increases from 79% to 92%, and for NVO
d-4, it advances from 91% to 99%. These observations underscore a distinct trend: with an increment in the concentration of oxygen defects, there is a corresponding increase in the pseudocapacitive contribution rate of the material.
The employment of the galvanostatic intermittent titration technique (GITT) provided further insight into the dynamics of Zn
2+ diffusion and its contribution to charge transfer within the material. The GITT experiments were performed at a controlled current density of 0.2 A g
−1, incorporating a relaxation period of 30 min and a data acquisition interval of 10 s. As illustrated in
Figure 10b,d,f, the derived diffusion coefficients for Zn
2+ across the examined materials were found to range between 10
−10 and 10
−11 cm
2 s
−1, indicating a moderate diffusion rate conducive to electrochemical activity. Notably, the diffusion coefficient for NVO
d-3 was marginally superior compared to those of NVO
d-2 and NVO
d-4.
Finally, to understand the implications of electrochemical cycling on the morphological evolution of electrodes, we conducted an examination of the morphological changes using SEM. This analysis was focused on cathode samples in various states: pristine (uncycled), fully discharged to 0.2 V, and fully charged to 1.6 V. The findings, depicted in
Figure 11, provide a visual representation of the dynamic changes occurring at the electrode surface throughout the cycling process.
Initially, SEM images of the pristine electrodes illustrated a clean surface, indicating a uniform and defect-free material. Upon discharging to 0.2 V, a distinct morphological transformation was observed. The electrode surfaces developed micrometer-scale flakes, indicative of the active material’s response to the electrochemical environment. These features were attributed to the accommodation of Zn2+ ions within the electrode matrix, leading to the creation of new surface structures.
Remarkably, when the electrodes were fully charged to 1.6 V, the micrometer-scale flakes disappeared, reverting the surface to a state closely resembling the initial pristine condition. This reversible morphological change is a testament to the electrode’s ability to undergo significant transformations while maintaining structural integrity and functionality. The disappearance of the flakes upon recharging demonstrates the excellent reversibility of Zn2+ intercalation/de-intercalation and the resilience of the electrode material under cycling conditions.