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Applied Sciences
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Two-Dimensional (2D) Materials: Applications, Performance and Future Trends
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Two-Dimensional (2D) Materials: Applications, Performance and Future Trends

A special issue of Applied Sciences (ISSN 2076-3417). This special issue belongs to the section "Materials Science and Engineering".

Deadline for manuscript submissions: closed (20 September 2024) | Viewed by 5497

Special Issue Editor

Dr. Zhibin Yang

E-Mail Website
Guest Editor
Center for Terahertz Waves and College of Precision Instrument and Optoelectronics Engineering, Tianjin University, Tianjin 300072, China
Interests: 2D materials; nano-optoelectronics; wafer-scale synthesis
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

Since the discovery of graphene in 2004, two-dimensional (2D) materials have attracted considerable attention in the past decade. The atomically thin thickness and van der Waals (vdWs) interaction between adjacent layers endow 2D materials with unique layer-dependent electrical, optical, and mechanical properties. With the rapid expansion of 2D groups in recent years, 2D materials have been applied in various fields, such as electronics, optoelectronics, biomedicine, catalysis, and energy storage. Compared to conventional materials, 2D devices not only possess a small size and tunable features but also exhibit remarkable performance and potential to develop real applications. This Special Issue of Applied Sciences aims to present original articles on the applications, performance, and future trends of 2D materials, providing a platform to share ideas and improve the investigation of the development of practical 2D devices. Both original research and review articles are welcomed in this issue.

Dr. Zhibin Yang
Guest Editor

Manuscript Submission Information

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Keywords

  • 2D materials
  • nanotechnology
  • electronic devices
  • optoelectronic applications
  • energy storage
  • wafer-scale synthesis

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Published Papers (4 papers)

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Research

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12 pages, 2833 KiB  
Article
Strain-Controlled Electronic and Magnetic Properties of Janus Nitride MXene Monolayer MnCrNO2
by Wentao Yue, Jun Shan, Runxian Jiao, Lichuan Zhang, Yuanping Chen and Dong Hao
Appl. Sci. 2024, 14(18), 8427; https://doi.org/10.3390/app14188427 - 19 Sep 2024
Viewed by 634
Abstract
Two-dimensional (2D) van der Waals (vdW) magnetic materials show potential for the advancement of high-density, energy-efficient electronic and spintronic applications in future memory and computation. Here, by using first-principles density functional theory (DFT) calculations, we predict a new 2D Janus nitride MXene MnCrNO [...] Read more.
Two-dimensional (2D) van der Waals (vdW) magnetic materials show potential for the advancement of high-density, energy-efficient electronic and spintronic applications in future memory and computation. Here, by using first-principles density functional theory (DFT) calculations, we predict a new 2D Janus nitride MXene MnCrNO2 monolayer. Our results suggest that the optimized MnCrNO2 monolayer possesses a hexagonal structure and exhibits good dynamical stability. The intrinsic monolayer MnCrNO2 exhibits semiconductive properties and adopts a ferromagnetic ground state with an out-of-plane easy axis. It can sustain strain effects within a wide range of strains from −10% to +8%, as indicated by the phonon dispersion spectra. Under the biaxial tensile strain, a remarkable decrease in the bandgap of the MnCrNO2 is induced, which is attributed to the distinct roles played by Mn and Cr in the VBM or CBM bands. Furthermore, when the compressive strain reaches approximately −8%, the magnetic anisotropy undergoes a transition from an out-of-plane easy axis to an in-plane easy axis. This change is mainly influenced by the efficient hybridization of the d orbitals, particularly in Mn atoms. Our study of the Janus MXene MnCrNO2 monolayer indicates its potential as a promising candidate for innovative electronic and spintronic devices; this potential is expected to create interest in its synthesis. Full article
(This article belongs to the Special Issue Two-Dimensional (2D) Materials: Applications, Performance and Future Trends)
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17 pages, 6083 KiB  
Article
Floquet Modification of the Bandgaps and Energy Spectrum in Flat-Band Pseudospin-1 Dirac Materials
by Andrii Iurov, Michael Mattis, Liubov Zhemchuzhna, Godfrey Gumbs and Danhong Huang
Appl. Sci. 2024, 14(14), 6027; https://doi.org/10.3390/app14146027 - 10 Jul 2024
Viewed by 950
Abstract
In this paper, we investigate the so-called electronic dressed states, a unified quasiparticle resulting from the interaction between electrons in a two-dimensional material with an off-resonance optical dressing field. If the frequency of this field is much larger than all characteristic energies in [...] Read more.
In this paper, we investigate the so-called electronic dressed states, a unified quasiparticle resulting from the interaction between electrons in a two-dimensional material with an off-resonance optical dressing field. If the frequency of this field is much larger than all characteristic energies in the system, such as the Fermi energy or bandgap(s), the electronic band structure is affected by radiation so that some important properties of the electron dispersions could be modified in a way desirable for practical applications. For example, circularly polarized light can be used to vary the bandgap of Dirac materials: it opens a gap in graphene and other metallic and semimetallic lattices, or it modifies the magnitude of an existing gap. This will either enhance or reduce a gap, depending on its initial value as well as properties of a host material. Here, we consider gapped dice and Lieb lattices as samples, and we put forward a full theoretical model to reveal how these electronic states are deformed by elliptically-polarized irradiation with a focus on the generation and modification of a bandgap. Full article
(This article belongs to the Special Issue Two-Dimensional (2D) Materials: Applications, Performance and Future Trends)
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13 pages, 5130 KiB  
Article
Characterization of Monovacancy Defects in Vanadium Diselenide Monolayer: A DFT Study
by Andrey A. Kistanov
Appl. Sci. 2024, 14(3), 1205; https://doi.org/10.3390/app14031205 - 31 Jan 2024
Viewed by 1198
Abstract
Defects are an integral part of the structure of various two-dimensional materials (2D), including 2D transition-metal dichalcogenides. These defects usually govern their electronic properties. In this work, simulations based on the density functional theory are employed for a comprehensive characterization of typical point [...] Read more.
Defects are an integral part of the structure of various two-dimensional materials (2D), including 2D transition-metal dichalcogenides. These defects usually govern their electronic properties. In this work, simulations based on the density functional theory are employed for a comprehensive characterization of typical point defects in the T–VSe2 and H–VSe2 monolayers. Specifically, Se and V monovacancy defects are studied. The formation of monovacancies in T–VSe2 and H–VSe2 monolayers are found to be less favorable than in other common transition-metal dichalcogenides. Meanwhile, Se and V monovacancy defects tune the electronic structure of the T–VSe2 and H–VSe2 monolayers significantly. The scanning tunneling microscopy simulated images obtained could facilitate the detection of monovacancies in T–VSe2 and H–VSe2 monolayers in experiments. Full article
(This article belongs to the Special Issue Two-Dimensional (2D) Materials: Applications, Performance and Future Trends)
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Review

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17 pages, 3930 KiB  
Review
Recent Progress in Synthesis and Photonic Applications of Two-Dimensional Bismuthene
by Haoran Li and Zhibin Yang
Appl. Sci. 2023, 13(12), 6885; https://doi.org/10.3390/app13126885 - 6 Jun 2023
Cited by 5 | Viewed by 2132
Abstract
The emergence of phosphorene has generated significant interest in 2D group VA nanomaterials. Among this group, bismuthene exhibits layer-dependent direct bandgaps, high carrier mobility, and topological insulator properties because of its unique structure and ultrathin nature, distinguishing it as a promising candidate for [...] Read more.
The emergence of phosphorene has generated significant interest in 2D group VA nanomaterials. Among this group, bismuthene exhibits layer-dependent direct bandgaps, high carrier mobility, and topological insulator properties because of its unique structure and ultrathin nature, distinguishing it as a promising candidate for photonic applications. Particularly, its outstanding stability in air makes bismuthene more advantageous than phosphorene for practical applications. Here, we provide a comprehensive review of recent advances regarding 2D bismuth by focusing on the aspects of methods of synthesis and photonic applications. First, the structure and fundamental properties of bismuthene are described, referring to its crystallinity and band structures, as well as to its nonlinear optical properties. Subsequently, the common synthesis methods for 2D bismuth are summarized, including both top-down and bottom-up approaches. Then, potential photonic applications based on 2D bismuth, involving nonlinear photonic devices, photocatalyst, and photodetectors, are illustrated. The performance, mechanisms, and features of the devices are discussed. Finally, the review is summarized and some challenges and future outlooks in this field are addressed. Full article
(This article belongs to the Special Issue Two-Dimensional (2D) Materials: Applications, Performance and Future Trends)
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