Advanced Surface Passivation Processes for Solar Cells
A special issue of Coatings (ISSN 2079-6412).
Deadline for manuscript submissions: closed (20 March 2018) | Viewed by 10735
Special Issue Editors
Interests: SOI MOS devices; digital and analog circuits, as well as sensors; MEMS and solar cells; ultra low-voltage low-power; microwave; biomedical; radiation-hardened and high-temperature electronics and microsystems
Special Issues, Collections and Topics in MDPI journals
Special Issue Information
Dear Colleagues,
We would like to invite you to submit your work to this Special Issue on "Advanced Surface Passivation Processes for Solar Cells". Surface and interface recombination in silicon imposes a fundamental limit to the performance of solar cells. At the core of solar energy research is the understanding of charge dynamics at, or near the surfaces and interfaces in silicon solar cells. As cells become thinner, their optical and electronic properties are more strongly affected by internal interfaces. A great deal of interest has been sparked recently on the processing techniques by which charge dynamics can be controlled at interfaces, specially passivation techniques that prevent carrier recombination at the surface of silicon solar cells. This has led to a new appreciation for surface phenomena and an extensive development of dielectric materials and their deposition techniques. Dielectrics ranging from SiOx and SiNx, to AlOx, HfOx, MoOx and TiOx have been shown to effectively passivate the silicon surface. Vast scientific and technological progress has been achieved on this topic by universities and research institutes all around the world. This progress has been supported by the industrial development of novel characterization and deposition tools. The aim of this Special Issue is to present the latest experimental and theoretical developments in the field, through a combination of original research papers and review articles from leading groups around the world.
In particular, the topic of interest includes, but is not limited to
- Fundamentals and new concepts of silicon surface passivation;
- Novel thin film dielectrics and deposition technology;
- Modeling and characterization methods of surface charge dynamics;
- Implementation of passivation technology into solar cells;
- Passivated hole and electron selective contacts.
Prof. Dr. Denis Flandre
Dr. Ratan Kotipalli
Guest Editors
Manuscript Submission Information
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