Search for Articles:
Title / Keyword
Author / Affiliation / Email
Journal
Article Type
 
 
Advanced Search
 
Section
Special Issue
Volume
Issue
Number
Page
 
4.2
2.4
Journals
Crystals
Special Issues
Epitaxial Growth and Application of Metallic Oxide Thin Films
share announcement

Epitaxial Growth and Application of Metallic Oxide Thin Films

A special issue of Crystals (ISSN 2073-4352). This special issue belongs to the section "Inorganic Crystalline Materials".

Deadline for manuscript submissions: closed (20 September 2024) | Viewed by 4452

Special Issue Editors

Dr. Fengmiao Li

E-Mail Website
Guest Editor
Stewart Blusson Quantum Matter Institute, The University of British Columbia, Vancouver, BC, Canada
Interests: superconducting materials; epitaxial film growth; X-ray spectroscopy; thin films
Dr. Ronny Sutarto

E-Mail Website
Guest Editor
Canadian Light Source (CLS) ,University of Saskatchewan, Saskatoon, SK, Canada
Interests: solid state spectroscopy; thin film deposition

Special Issue Information

Dear Colleagues,

Oxides are abundantly found in nature, encompassing insulators, semiconductors, as well as (good and bad) metals. Of these, metallic films are of particular interest. Metallic thin films as electrical conducting layers or contacts are essential components in electronic and spintronic devices. Itinerant electrons in quantum materials interact strongly with lattice, spin, and charge degree of freedom, leading to interesting electrical and magnetic properties and useful functionalities. Epitaxial growth that can control film stoichiometry and thickness, strain, as well as defects serves as a versatile experimental method for engineering material properties. Further, integrating different materials by epitaxial growth could create new physical properties at the boundary of two materials, i.e., at the interface. For instance, superconductivity, ferromagnetism, and high-mobility electron gases have been discovered recently at two-dimensional oxide interfaces.

This Special Issue aims to present a collection of articles describing recent advances in the epitaxial growth of oxide films using various epitaxy techniques such as molecular beam epitaxy (MBE), pulsed laser deposition (PLD), atomic layer deposition (ALD), and sputtering deposition, and will also provide new results and insights into the physical properties and their application. The topics, with more emphasis on film synthesis and application, cover the theoretical design of novel materials, synthesis and characterization of oxide films, and device development based on metallic thin films.

Dr. Fengmiao Li
Dr. Ronny Sutarto
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Crystals is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2100 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • metallic oxide films
  • epitaxial growth
  • oxide interfaces
  • molecular beam epitaxy
  • pulsed laser deposition
  • atomic layer deposition
  • sputtering deposition

Benefits of Publishing in a Special Issue

  • Ease of navigation: Grouping papers by topic helps scholars navigate broad scope journals more efficiently.
  • Greater discoverability: Special Issues support the reach and impact of scientific research. Articles in Special Issues are more discoverable and cited more frequently.
  • Expansion of research network: Special Issues facilitate connections among authors, fostering scientific collaborations.
  • External promotion: Articles in Special Issues are often promoted through the journal's social media, increasing their visibility.
  • e-Book format: Special Issues with more than 10 articles can be published as dedicated e-books, ensuring wide and rapid dissemination.

Further information on MDPI's Special Issue polices can be found here.

Published Papers (3 papers)

Download All Papers
Order results
Result details
Show export options expand_more Show export options expand_less
Select all
Export citation of selected articles as:

Research

12 pages, 11793 KiB  
Article
Investigation and Comparison of the Performance for β-Ga2O3 Solar-Blind Photodetectors Grown on Patterned and Flat Sapphire Substrate
by Zuyong Yan, Shan Li, Zeng Liu, Jianying Yue, Xueqiang Ji, Jinjin Wang, Shanglin Hou, Gang Wu, Jingli Lei, Guobin Sun, Peigang Li and Weihua Tang
Crystals 2024, 14(7), 625; https://doi.org/10.3390/cryst14070625 - 7 Jul 2024
Viewed by 1094
Abstract
Ga2O3, with its large band gap, is a promising material suitable for utilization in solar-blind photodetection. Sapphire with a higher lattice match with Ga2O3 was used as the substrate for epitaxial growth of Ga2O [...] Read more.
Ga2O3, with its large band gap, is a promising material suitable for utilization in solar-blind photodetection. Sapphire with a higher lattice match with Ga2O3 was used as the substrate for epitaxial growth of Ga2O3. Here, the epitaxial layers of Ga2O3 were deposited by MOCVD on patterned sapphire substrates. The structure of epitaxial Ga2O3 layers on patterned substrates has been identified by X-ray diffractometry. To investigate the influence of the patterned substrates on the formation of epitaxial layers, thin Ga2O3 layers were grown on a flat sapphire substrate under the same conditions. Both types of samples were β-phase. However, no improvement in the layers’ crystalline quality was discovered when utilizing patterned sapphire substrates. In addition, the performance of the obtained two types of Ga2O3 photodetectors was compared. The photoelectric properties, such as responsivity, response speed, and detection capability, were different in the case of flat samples. Full article
(This article belongs to the Special Issue Epitaxial Growth and Application of Metallic Oxide Thin Films)
►▼ Show Figures

Figure 1

11 pages, 4830 KiB  
Article
Study of AlN Epitaxial Growth on Si (111) Substrate Using Pulsed Metal–Organic Chemical Vapour Deposition
by Muhammad Iznul Hisyam, Ahmad Shuhaimi, Rizuan Norhaniza, Marwan Mansor, Adam Williams and Mohd Rofei Mat Hussin
Crystals 2024, 14(4), 371; https://doi.org/10.3390/cryst14040371 - 16 Apr 2024
Cited by 3 | Viewed by 1368
Abstract
A dense and smooth aluminium nitride thin film grown on a silicon (111) substrates using pulsed metal–organic chemical vapor deposition is presented. The influence of the pulsed cycle numbers on the surface morphology and crystalline quality of the aluminium nitride films are discussed [...] Read more.
A dense and smooth aluminium nitride thin film grown on a silicon (111) substrates using pulsed metal–organic chemical vapor deposition is presented. The influence of the pulsed cycle numbers on the surface morphology and crystalline quality of the aluminium nitride films are discussed in detail. It was found that 70 cycle numbers produced the most optimized aluminium nitride films. Field emission scanning electron microscopy and atomic force microscopy images show a dense and smooth morphology with a root-mean-square-roughness of 2.13 nm. The narrowest FWHM of the X-ray rocking curve for the AlN 0002 and 10–12 reflections are 2756 arcsec and 3450 arcsec, respectively. Furthermore, reciprocal space mapping reveals an in-plane tensile strain of 0.28%, which was induced by the heteroepitaxial growth on the silicon (111) substrate. This work provides an alternative approach to grow aluminium nitride for possible application in optoelectronic and power devices. Full article
(This article belongs to the Special Issue Epitaxial Growth and Application of Metallic Oxide Thin Films)
►▼ Show Figures

Figure 1

10 pages, 4921 KiB  
Article
The Effect of Sputtering Target Density on the Crystal and Electronic Structure of Epitaxial BaTiO3 Thin Films
by Fugang Qi, Shaoqin Peng, Jiachang Bi, Shunda Zhang, Guanhua Su, Peiyi Li, Jiahui Zhang, Tengteng Zhang, Weisong Zhou, Ruyi Zhang and Yanwei Cao
Crystals 2024, 14(4), 304; https://doi.org/10.3390/cryst14040304 - 26 Mar 2024
Viewed by 1511
Abstract
Barium titanate (BaTiO3) is a promising material for silicon-integrated photonics due to its large electro-optical coefficients, low loss, high refractive index, and fast response speed. Several deposition methods have been employed to synthesize BaTiO3 films. Magnetron sputtering is one of [...] Read more.
Barium titanate (BaTiO3) is a promising material for silicon-integrated photonics due to its large electro-optical coefficients, low loss, high refractive index, and fast response speed. Several deposition methods have been employed to synthesize BaTiO3 films. Magnetron sputtering is one of these methods, which offers specific advantages for growing large-scale films. However, there is a scarcity of studies investigating the effect of sputtering target density on the quality of BaTiO3 films. Therefore, this study aims to uncover the effect of sputtering targets on the crystal and electronic structures of epitaxial BaTiO3 thin films. Two BaTiO3 ceramic targets were sintered at different densities by altering the sintering temperatures. The crystal structure and chemical composition of the targets were then characterized using X-ray diffraction, Raman spectroscopy, and scanning electron microscopy with energy-dispersive X-ray spectroscopy. Subsequently, BaTiO3 epitaxial films were grown by magnetron sputtering using these two targets. The crystal and electronic structures of the BaTiO3 films were analyzed using high-resolution X-ray diffraction, X-ray photoemission spectroscopy, atomic force microscopy, and spectroscopic ellipsometry. Notably, the BaTiO3 films grown with high-density targets show superior quality but contain oxygen vacancies, whereas those films synthesized with low-density targets display high surface roughness. These findings provide insights into the effect of sputtering target density on the crystal and electronic structures of epitaxial BaTiO3 thin films. Full article
(This article belongs to the Special Issue Epitaxial Growth and Application of Metallic Oxide Thin Films)
►▼ Show Figures

Figure 1

Show export options expand_more Show export options expand_less
Select all
Export citation of selected articles as:
 
Displaying articles 1-3
Back to TopTop