Advances in Halide Perovskite Materials
A special issue of Crystals (ISSN 2073-4352). This special issue belongs to the section "Organic Crystalline Materials".
Deadline for manuscript submissions: closed (31 October 2022) | Viewed by 9285
Special Issue Editors
Interests: hybrid halide perovskites; oxide semiconductors; amorphous oxides; nuclear materials; surface and interfaces in perovskites and MXenes; electronic structure calculations
Interests: organic semiconductors; hybrid/composite semiconductors; photovoltaic; optoelectronic devices; detectors
Interests: molecular beam epitaxy of III-V semiconductor compounds; growth on lattice mismatched substrates; strained layer superlattices; carrier recombination and transport in semiconductor heterostructures; optoelectronic devices and integrated circuits
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Special Issue Information
Dear Colleagues,
The excellent electronic properties and incredible photovoltaic performance of hybrid organic–inorganic perovskites have brought significant attention to this class of halide semiconductors, resulting in the recent surge in active study of halide semiconductors and insulators. These materials are used in various optoelectronic devices, such as highly efficient perovskite solar cells and light-emitting diodes. Therefore, understanding and tuning the halide perovskites' structural and optoelectronic properties is essential in the search for materials with targeted properties.
In halide semiconductors or insulators, defect formation plays an essential role in carrier generation and transport. Along with studying the extrinsic defects so as to tune the electronic structure, finding intrinsic defects, such as vacancy, un-intentional defects, polarons, and excitons, is essential in order to understand the physics of the system, because we cannot avoid the formation of defects, and those defects alter the host properties. For instance, defect tolerance in organic–inorganic hybrid perovskite plays a critical role because of its unprecedented carrier diffusion length, resulting in enhanced photovoltaic efficiency. In contrast, zero-dimensional perovskite (Cs4PbBr6) is a promising compound with an excellent high photoluminescence quantum yield, and although its green emission source has not yet been identified, experimentation suggests that there is stable binding energy of exciton, which is usually a hole and electron recombination centre. Because both materials have the same perovskite structure but with opposite properties, they constitute an excellent example to investigate carrier transport mechanisms regarding exciton formation in halide perovskite.
This Special Issue is aimed at designing advanced halide perovskite, inviting papers on, but not limited to, the following topics: design, synthesis, and characterizations of perovskite; from bulk- to nano- and zero-dimensional crystals; theoretical calculation for the structure; surface passivation; ligand engineering; post-synthesis treatment; self-assembly; tuning the luminescence; trap states; charge carrier dynamics; stability enhancement; and optoelectronic applications.
Dr. Rabi Khanal
Dr. Byungkyun Kang
Prof. Dr. Dmitri Donetski
Guest Editors
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Keywords
- Halide perovskite
- Optoelectronic devices
- Defect
- Luminescence
- Photovoltaic
- Charge carrier dynamics
- Defect passivation
- Polaron
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