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Crystals
Special Issues
Nanowires and Quantum Dots for IoT Applications
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Nanowires and Quantum Dots for IoT Applications

A special issue of Crystals (ISSN 2073-4352).

Deadline for manuscript submissions: closed (15 December 2019) | Viewed by 13876

Special Issue Editors

Dr. Bassem Salem

E-Mail Website1 Website2 Website3
Guest Editor
Laboratoire des Technologies de la Microélectronique, 38054 Grenoble, France
Interests: nanowires and quantum dots; nanoelectronic devices; 3D integration; nanomaterials; thin films growth and nanotechnology; optoelectronics; terahertz spectroscopy; sensors; micro- and nanofabrication; tunnel FET
Dr. Bouraoui Ilahi

E-Mail Website
Guest Editor
Department of Physics and Astronomy, College of Sciences, King Saud University, Riyadh, Saudi Arabia
Interests: crystal growth; quantum wells/wires/dots; numerical modeling; optical and structural characterization; optoelectronic and photovoltaic devices

Special Issue Information

Dear Colleagues,

Nanowires and quantum dots are emerging as building blocks for the bottom–up assembly of nano-devices and functional systems, holding promise for a variety of application fields including chemical and biological sensors, field effect transistors, light-emitting diodes, photovoltaic cells, and photodetectors. The continuous progress in the improvement of nanowires and quantum dots properties as well as the development of novel nanostructures has paved the way to significant achievements in electronic and optoelectronic device performance.

This volume intends to cover the main fundamental and technological achievements related to the preparation methods and techniques, as well as the optical, electrical, and structural properties of materials and devices based on nanowires and quantum dots. Numerical modelling of the fundamental properties of the nanowires and quantum dots as well as the modelling and simulation of nanoelectronic and optoelectronic devices based on these nanostructures are particularly welcome.

This Special Issue of Crystals focuses on these innovative topics by inviting original contributions as well as topical reviews dealing with the fabrication, characterization, and modelling of materials and devices based on crystalline nanowires and quantum dots for IoT applications.

Dr. Bassem Salem
Dr. Bouraoui Ilahi
Guest Editors

Manuscript Submission Information

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Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Crystals is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2100 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • nanowires, nanorods, and quantum dots growth
  • fundamental properties of novel nanowires and quantum dots structures (III-V, Ge(Si)Sn, III-V on Si substrate, etc.)
  • nanowires and quantum dots based optoelectronic devices and active layers (LED, photodetector, solar cells, etc.)
  • nanowire transistor and nanowire sensors
  • 3D integration
  • modeling nanowire/quantum dots electronic and optical properties
  • physico-chemical characterizations
  • strain engineered nanostructures
  • luminescence properties of nanowires and quantum dots
  • nanowire/quantum dots made from CMOS-compatible direct band gap materials (GeSn, GePb, GeC, etc.)

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Published Papers (3 papers)

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Research

7 pages, 2647 KiB  
Article
Size and Shape Evolution of GaAsSb-Capped InAs/GaAs Quantum Dots: Dependence on the Sb Content
by Khairiah Alshehri, Abdelmajid Salhi, Niyaz Ahamad Madhar and Bouraoui Ilahi
Crystals 2019, 9(10), 530; https://doi.org/10.3390/cryst9100530 - 15 Oct 2019
Cited by 3 | Viewed by 2852
Abstract
Capping InAs/GaAs quantum dots (QDs) with a thin GaAsSb layer alters the QDs structural properties, leading to considerable changes in their optical properties. The increase of the Sb content induces a redshift of the emission energies, indicating a change in the buried QDs [...] Read more.
Capping InAs/GaAs quantum dots (QDs) with a thin GaAsSb layer alters the QDs structural properties, leading to considerable changes in their optical properties. The increase of the Sb content induces a redshift of the emission energies, indicating a change in the buried QDs shape and size. The presence of well-defined ground- and excited-state emission bands in all the photoluminescence spectra allow an accurate estimation of the buried QDs size and shape by numerical evaluation and tuning of the theoretical emission energies. For an Sb content below 14%, the QDs are found to have a type I band alignment with a truncated height pyramidal form. However, for higher Sb content (22%), the QDs are present in a full pyramidal shape. The observed behavior is interpreted in terms of increasing prevention of InAs QDs decomposition with increasing the Sb content in the cap layer. Full article
(This article belongs to the Special Issue Nanowires and Quantum Dots for IoT Applications)
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9 pages, 3743 KiB  
Article
Synthesis and Study of CdSe QDs by a Microfluidic Method and via a Bulk Reaction
by Jinfeng Liu, Yarong Gu, Qirui Wu, Xiaohong Wang, Lijuan Zhao, Andrew deMello, Weijia Wen, Rui Tong and Xiuqing Gong
Crystals 2019, 9(7), 368; https://doi.org/10.3390/cryst9070368 - 18 Jul 2019
Cited by 9 | Viewed by 4405
Abstract
In this work, we synthesized monodispersed CdSe quantum dots (QDs) by a microfluidic method and via a bulk reaction. The structures of the CdSe QDs were characterized by X-ray powder diffraction (XRD) and high-resolution transmission electron microscopy (HR-TEM). The optical properties of the [...] Read more.
In this work, we synthesized monodispersed CdSe quantum dots (QDs) by a microfluidic method and via a bulk reaction. The structures of the CdSe QDs were characterized by X-ray powder diffraction (XRD) and high-resolution transmission electron microscopy (HR-TEM). The optical properties of the prepared CdSe QDs were determined using ultraviolet-visible absorption spectroscopy and photoluminescence spectroscopy. The CdSe QDs obtained by the microfluidic method have a faster crystal growth rate and a higher absolute photoluminescence quantum yield than those obtained via the bulk reaction. Additionally, we investigated the growth process of the CdSe QDs with increasing residence times. Full article
(This article belongs to the Special Issue Nanowires and Quantum Dots for IoT Applications)
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14 pages, 7113 KiB  
Article
Determination of Crystal Growth Geometry Factors and Nucleation Site Densities of Electrodeposited Ferromagnetic Cobalt Nanowire Arrays
by Ryusei Saeki and Takeshi Ohgai
Crystals 2019, 9(3), 142; https://doi.org/10.3390/cryst9030142 - 10 Mar 2019
Cited by 11 | Viewed by 6008
Abstract
The time-dependence of electrochemical reduction current, which was observed during the one-dimensional (1-D) crystal growth of ferromagnetic cobalt nanowire arrays, was analyzed by Johnson–Mehl–Avrami–Kolmogorov (JMAK) theory. Textured hcp-Co nanowire arrays were synthesized by potentio-static electrochemical reduction of Co2+ ions in anodized aluminum [...] Read more.
The time-dependence of electrochemical reduction current, which was observed during the one-dimensional (1-D) crystal growth of ferromagnetic cobalt nanowire arrays, was analyzed by Johnson–Mehl–Avrami–Kolmogorov (JMAK) theory. Textured hcp-Co nanowire arrays were synthesized by potentio-static electrochemical reduction of Co2+ ions in anodized aluminum oxide (AAO) nanochannel films. Crystal growth geometry factor n in the JMAK equation was determined to be ca. 1. Hence, the electrochemical crystal growth process of a numerical nanowires array can be explained by 1-D geometry. The crystal nucleation frequency factor, k in JMAK equation was estimated to be the range between 10−4 and 10−3. Our experimental results revealed that the crystal nucleation site density Nd increased up to 2.7 × 10−8 nm−3 when increasing the overpotential for cobalt electrodeposition by shifting the cathode potential down to −0.85 V vs. Ag/AgCl. The (002) crystal orientation of hcp-Co nanowire arrays was, remarkably, observed by decreasing Nd. Spontaneous magnetization behavior was observed in the axial direction of nanowires. By decreasing the overpotential for cobalt electrodeposition, the coercivity of the nanocomposite film increased and reached up to 1.88 kOe, with a squareness of ca. 0.9 at room temperature. Full article
(This article belongs to the Special Issue Nanowires and Quantum Dots for IoT Applications)
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