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Electronics
Special Issues
Ultrasensitive Photodetectors and Applications
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Ultrasensitive Photodetectors and Applications

A special issue of Electronics (ISSN 2079-9292). This special issue belongs to the section "Semiconductor Devices".

Deadline for manuscript submissions: closed (1 March 2022) | Viewed by 9528

Special Issue Editor

Prof. Dr. Arash Takshi

E-Mail Website
Guest Editor
Department of Electrical Engineering, University of South Florida, Tampa, FL 33620, USA
Interests: solar cells; organic electronics; stretchable electronics

Special Issue Information

Dear Colleagues,

Recent studies on novel materials such as perovskites, graphene, and photosynthetic proteins have shown unique material properties with nearly a 100% internal quantum efficiency in converting photons to electric charges. This has opened the doors for designing ultrasensitive photodetectors for various applications in photo-spectroscopy, dark vision cameras, and other applications.

While some materials are naturally suitable for making photodetectors, the sensitivity of the photodetector can largely depend on the design of the sensor. In this Special Issue, we are interested in the research works on ultrasensitive photodetectors using emerging materials, or detectors with new designs. Also, new or special applications that require photosensors with a high sensitivity are within the scope of this Special Issue. Studies related to the lifetime and performance of new or conventional sensitive photodetectors will also be considered.

The topics to be covered in this Special Issue are as follows:

  • Phototransistors
  • Photodiodes
  • Photoresistors
  • Rectana-based sensors
  • Photoelectrochemical sensors
  • Perovskite-based photosensors
  • Graphene-based photodetectors
  • Organic photosensors
  • Reaction center-based photodetectors
  • Photosynthetic materials for light detection
  • Piezo-photonic sensors
  • Broad and narrow bandwidth photodetectors
  • Ultrasensitive photo-spectroscopy
  • Night vision cameras
  • Stability and lifetime of photosensors

Prof. Dr. Arash Takshi
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Electronics is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

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Published Papers (3 papers)

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Research

10 pages, 18064 KiB  
Article
The Characteristics of Aluminum-Gallium-Zinc-Oxide Ultraviolet Phototransistors by Co-Sputtering Method
by Wei-Lun Huang, Sheng-Po Chang, Cheng-Hao Li and Shoou-Jinn Chang
Electronics 2021, 10(5), 631; https://doi.org/10.3390/electronics10050631 - 9 Mar 2021
Cited by 3 | Viewed by 2718
Abstract
In this thesis, Aluminum-Gallium-Zinc oxide (AGZO) photo thin film transistors (PTFTs) fabricated by the co-sputtered method are investigated. The transmittance and absorption show that AGZO is highly transparent across the visible light region, and the bandgap of AGZO can be tuned by varying [...] Read more.
In this thesis, Aluminum-Gallium-Zinc oxide (AGZO) photo thin film transistors (PTFTs) fabricated by the co-sputtered method are investigated. The transmittance and absorption show that AGZO is highly transparent across the visible light region, and the bandgap of AGZO can be tuned by varying the co-sputtering power. The AGZO TFT demonstrates high performance with a threshold voltage (VT) of 0.96 V, on/off current ratio of 1.01 × 107, and subthreshold swing (SS) of 0.33 V/dec. Besides, AGZO has potential for solar-blind applications because of its wide bandgap. The AGZO PTFT of this research can achieve a rejection ratio of 4.31 × 104 with proper sputtering power and a rising and falling time of 35.5 s and 51.5 s. Full article
(This article belongs to the Special Issue Ultrasensitive Photodetectors and Applications)
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9 pages, 2546 KiB  
Article
Microfluidic Approach for Lead Halide Perovskite Flexible Phototransistors
by Fatemeh Khorramshahi and Arash Takshi
Electronics 2020, 9(11), 1852; https://doi.org/10.3390/electronics9111852 - 5 Nov 2020
Cited by 7 | Viewed by 3486
Abstract
Lead halide perovskites possess outstanding optical characteristics that can be employed in the fabrication of phototransistors. However, due to low current modulation at room temperature, sensitivity to the ambient environment, lack of patterning techniques and low carrier mobility of polycrystalline form, investigation in [...] Read more.
Lead halide perovskites possess outstanding optical characteristics that can be employed in the fabrication of phototransistors. However, due to low current modulation at room temperature, sensitivity to the ambient environment, lack of patterning techniques and low carrier mobility of polycrystalline form, investigation in perovskite phototransistors has been limited to rigid substrates such as silicon and glass to improve the film quality. Here, we report on room temperature current modulation in a methylammonium lead iodide perovskite (MAPbI3) flexible transistor made by an extremely cheap and facile fabrication process. The proposed phototransistor has the top-gate configuration with a lateral drain–channel–source structure. The device performed in the linear and saturation regions both in the dark and under white light in different current ranges according to the illumination conditions. The transistor showed p-type transport characteristics and the field effect mobility of the device was calculated to be ~1.7 cm2 V−1 s−1. This study is expected to contribute to the development of MAPbI3 flexible phototransistors. Full article
(This article belongs to the Special Issue Ultrasensitive Photodetectors and Applications)
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8 pages, 2833 KiB  
Article
Bio-Phototransistors with Immobilized Photosynthetic Proteins
by Arash Takshi, Houman Yaghoubi, Daniel Jun and J. Thomas Beatty
Electronics 2020, 9(10), 1709; https://doi.org/10.3390/electronics9101709 - 18 Oct 2020
Cited by 4 | Viewed by 2406
Abstract
The efficient mechanism of light capture by photosynthetic proteins allows for energy transfer and conversion to electrochemical energy at very low light intensities. In this work, reaction center (RC) proteins, or a core complex consisting of the RC encircled by light harvesting (LH1) [...] Read more.
The efficient mechanism of light capture by photosynthetic proteins allows for energy transfer and conversion to electrochemical energy at very low light intensities. In this work, reaction center (RC) proteins, or a core complex consisting of the RC encircled by light harvesting (LH1) proteins (RC-LH1) from photosynthetic bacteria, were immobilized on an insulating layer of an ion-sensitive field-effect transistor (ISFET) to build bio-photodetectors. The orientation of the RC proteins was controlled via application of a hybrid linker made of 10-carboxydecylphosphonic acid and cytochrome c that anchored the RCs to their electron donor side. Bio-phototransistors consisting of either the core RC or the RC-LH1 core complex were tested under white and monochromic light. The difference between the dark and light currents at different wavelengths are well-matched with the absorption spectrum of the photosynthetic proteins. The results show potential for the use of photosynthetic proteins in photodetectors. Full article
(This article belongs to the Special Issue Ultrasensitive Photodetectors and Applications)
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