Reliability and Failure Analysis for Future GaN Technologies
A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Materials Physics".
Deadline for manuscript submissions: closed (10 October 2022) | Viewed by 740
Special Issue Editors
Interests: Si and wide-bandgap semiconductors; power electronics; failure analysis
Interests: characterization; reliability; compound semiconductor devices; LEDs; laser diodes; HEMTs; solar cells
Special Issues, Collections and Topics in MDPI journals
Special Issue Information
Dear Colleagues,
The topics of saving global resources by increasing energy efficiency, mastering the problems of future digitalization and communication in society, and transforming mobility systems toward green electric cars and autonomous driving are among the most significant problems global society has to address today. A major target consists in developing powerful, efficient, and reliable electronic devices to provide the required high-performing hardware components. In this context, a huge potential for GaN-based semiconductor devices is currently arising, complementing traditional Si-based electronics for many challenging applications, such as 5G high-speed communication systems, and high-frequency power converters for consumer applications, for data centers, for industry and energy technology, as well as for sensors in mobility applications. Current GaN-device research activities are focusing on size reduction, cost effectiveness, and reliability while dealing with several challenges such as:
- Higher electric fields and related drift phenomena impacting lifetime;
- Higher current densities reducing lifetime by electromigration;
- Higher power densities limiting the compactness potential by thermal issues.
Many questions with respect to lacking robustness and reliability causing significant failure risks during manufacturing have to be answered, thus forming road-blocking obstacles on the way to the mass market.
In this Special Issue, modern trends of GaN-based semiconductor technologies and devices and the related reliability risks and failure analysis approaches are highlighted and discussed.
It is my pleasure to invite you to submit a manuscript to this Special Issue. Full papers, communications, and reviews are all welcome.
Dipl. Phys. Frank Altmann
Prof. Dr. Matteo Meneghini
Guest Editors
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Keywords
- gallium nitride
- HEMT devices
- wide-bandgap semiconductors
- power electronics
- reliability
- failure analysis
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