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Advanced Photodetectors: Materials, Design and Applications

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A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "D：Materials and Processing".

Deadline for manuscript submissions: 15 June 2025 | Viewed by 2234

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Special Issue Editors

Dr. Maurizio Casalino

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Guest Editor

Institute of Applied Science and Intelligent Systems “Eduardo Caianiello” (CNR), Via P. Castellino n. 141, 80131 Naples, Italy
Interests: photodetectors; emerging materials; optoelectronics; silicon
Special Issues, Collections and Topics in MDPI journals

Dr. Teresa Crisci

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Guest Editor Assistant

Institute of Applied Science and Intelligent Systems “Eduardo Caianiello” (CNR), Via P. Castellino n. 141, 80131 Naples, Italy
Interests: photonics; graphene; photodetectors; solid state devices
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

We invite researchers, scientists, and experts in the field of photodetectors to submit their innovative work for consideration in our upcoming Special Issue "Advanced Photodetectors: Materials, Design, and Applications".

This Special Issue aims to provide a platform for showcasing cutting-edge advancements in photodetector technology. We encourage submissions related to:

Materials: Explore novel materials that are revolutionizing photodetection, from traditional semiconductors to emerging nanomaterials and organic compounds. Share your insights into the unique properties and potential applications of these materials.
Design: Present your research on innovative photodetector designs, including plasmonic structures, quantum dot-based architectures, and beyond. Discuss how these designs optimize light absorption, enhance sensitivity, and enable new functionalities.
Applications: Demonstrate the practical relevance of advanced photodetectors in various domains, such as optical communications, imaging, remote sensing, and biomedical applications. Showcase how your work contributes to solving real-world challenges.

By submitting your contributions to this Special Issue, you will join a dynamic community of experts pushing the boundaries of photodetector technology. Your research will help bridge the gap between materials science, design innovation, and practical applications.

Do’ not miss the opportunity to be part of this exciting exploration, share your groundbreaking research, and contribute to the advancement of this vital field. Submit your manuscripts today to be considered for publication in this prestigious Special Issue.

Dr. Maurizio Casalino
Guest Editor

Dr. Teresa Crisci
Guest Editors Assistant

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Micromachines is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2100 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

photodetectors
materials science
semiconductor devices
design
sensing technology
optoelectronics
nanomaterials
quantum dots
optical communication
imaging technologies

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Published Papers (2 papers)

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Research

11 pages, 4529 KiB

Open AccessArticle

Reversibly Alterable Hot-Electron Photodetection Without Altering Working Wavelengths Through Phase-Change Material Sb₂S₃

by Yaoyao Li, Xiaoyan Yang, Jia Hao, Junhui Hu, Qingjia Zhou and Weijia Shao

Micromachines 2025, 16(2), 146; https://doi.org/10.3390/mi16020146 - 26 Jan 2025

Viewed by 384

Abstract

Generally, the responsivities of hot-electron photodetectors (HE PDs) are mainly dependent on the device working wavelengths. Therefore, a common approach to altering device responsivities is to change the working wavelengths. Another strategy for manipulating electrical performances of HE PDs is to harness electric bias that can be used to regulate hot-electron harvesting at specified working wavelengths. However, the reliance on bias hampers the flexibility in device operations. In this study, we propose a purely planar design of HE PDs that contains the phase-change material Sb₂S₃, realizing reversibly alterable hot-electron photodetection without altering the working wavelengths. Optical simulations show that the designed device exhibits strong absorptance (>0.95) at the identical resonance wavelengths due to the excitations of Tamm plasmons (TPs), regardless of Sb₂S₃ phases. Detailed electrical calculations demonstrate that, by inducing Sb₂S₃ transitions between crystalline and amorphous phases back and forth, the device responsivities at TP wavelengths can be reversibly altered between 59.9 nA/mW to 128.7 nA/mW. Moreover, when device structural parameters are variable and biases are involved, the reversibly alterable hot-electron photodetection at specified TP wavelengths is maintained. Full article

(This article belongs to the Special Issue Advanced Photodetectors: Materials, Design and Applications)

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12 pages, 6219 KiB

Open AccessArticle

Room-Temperature (RT) Extended Short-Wave Infrared (e-SWIR) Avalanche Photodiode (APD) with a 2.6 µm Cutoff Wavelength

by Michael Benker, Guiru Gu, Alexander Z. Senckowski, Boyang Xiang, Charles H. Dwyer, Robert J. Adams, Yuanchang Xie, Ramaswamy Nagarajan, Yifei Li and Xuejun Lu

Micromachines 2024, 15(8), 941; https://doi.org/10.3390/mi15080941 - 24 Jul 2024

Cited by 1 | Viewed by 1218

Abstract

Highly sensitive infrared photodetectors are needed in numerous sensing and imaging applications. In this paper, we report on extended short-wave infrared (e-SWIR) avalanche photodiodes (APDs) capable of operating at room temperature (RT). To extend the detection wavelength, the e-SWIR APD utilizes a higher indium (In) composition, specifically In_0.3Ga_0.7As_0.25Sb_0.75/GaSb heterostructures. The detection cut-off wavelength is successfully extended to 2.6 µm at RT, as verified by the Fourier Transform Infrared Spectrometer (FTIR) detection spectrum measurement at RT. The In_0.3Ga_0.7As_0.25Sb_0.75/GaSb heterostructures are lattice-matched to GaSb substrates, ensuring high material quality. The noise current at RT is analyzed and found to be the shot noise-limited at RT. The e-SWIR APD achieves a high multiplication gain of

M ~ 190

at a low bias of

V_{b i a s} = - 2.5 V

under illumination of a distributed feedback laser (DFB) with an emission wavelength of 2.3 µm. A high photoresponsivity of

R > 140 A / W

is also achieved at the low bias of

V_{b i a s} = - 2.5 V

. This type of highly sensitive e-SWIR APD, with a high internal gain capable of RT operation, provides enabling technology for e-SWIR sensing and imaging while significantly reducing size, weight, and power consumption (SWaP). Full article