Prospective Outlook on Perovskite Materials and Devices

A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "A:Physics".

Deadline for manuscript submissions: 20 December 2024 | Viewed by 3015

Special Issue Editors

School of Materials Science and Engineering, Beijing Institute of Technology, Beijing 100081, China
Interests: optoelectronic materials and devices; semiconductor nanocrystals; halide perovskite
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Guest Editor
School of Materials Science and Engineering, Beijing Institute of Technology, Beijing 100081, China
Interests: optoelectronic materials and devices; halide perovskite; high-energy radiation detection
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

For optoelectronic devices based on halide perovskite to become high-performance and cost-effective optoelectronic technology, their efficiency/stability/industrialization must be considered. In particular, their working stability is a significant obstacle to the development of perovskite materials and devices; this is primarily influenced by polycrystalline materials with a low formation energy. In recent years, significant advances have been made in the study of the crystal growth process, photo/moisture/oxygen/heat-induced degradation, performance optimization, and the design of perovskite devices in terms of both mechanisms and solutions. However, how do environmental factors affect the formation/degradation of perovskite lattices? Is component engineering, facet engineering, or additive engineering more suitable for the commercial development of perovskite? How can perovskite optoelectronic devices achieve long-term relevance in the silicon market? These questions remain unanswered, and represent pertinent topics. This Special Issue, entitled “Prospective Outlook on Perovskite Materials and Devices”, aims to provide an overview of the progress achieved in recent years. Potential topics include, but are not limited to, the following: perovskite solar cells; perovskite light-emitting devices; perovskite detectors; perovskite memristors; perovskite nanocrystals; material science or material chemistry regarding halide perovskite; device physics regarding perovskite devices; the process of developing novel devices; the characterization of novel perovskite films and devices; and the design of novel perovskite materials and devices.

Dr. Jing Wei
Prof. Dr. Fangze Liu
Guest Editors

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Keywords

  • perovskite
  • commercial development
  • interface engineer
  • crystal growth
  • device stability
  • degradation
  • solar cells
  • light emitting devices
  • memristor
  • nanocrystals

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Published Papers (3 papers)

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Research

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10 pages, 1634 KiB  
Article
Analytical Model for Current–Voltage Characteristics in Perovskite Solar Cells Incorporating Bulk and Surface Recombination
by M. Z. Kabir
Micromachines 2024, 15(8), 972; https://doi.org/10.3390/mi15080972 - 29 Jul 2024
Viewed by 726
Abstract
The effects of surface recombination on the steady-state carrier profiles and photocurrent in perovskite solar cells are investigated in this paper. The continuity equations for both holes and electrons are solved considering carrier drift and diffusion under the exponential carrier generation profile in [...] Read more.
The effects of surface recombination on the steady-state carrier profiles and photocurrent in perovskite solar cells are investigated in this paper. The continuity equations for both holes and electrons are solved considering carrier drift and diffusion under the exponential carrier generation profile in the perovskite layer and considering both bulk and interface carrier recombination. An analytical expression for the solar-induced photocurrent is derived. The rate of carrier recombination at the interfaces has a very significant effect on the carrier profile, photocurrent, and, hence, on the charge collection efficiency. The external current density is calculated considering the dark current and nominal solar spectrum-induced photocurrent. The proposed model is fitted and verified with published experimental results from various publications. The fittings of the model with experimental results provide information about the interface and bulk charge carrier transport parameters. Full article
(This article belongs to the Special Issue Prospective Outlook on Perovskite Materials and Devices)
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10 pages, 2169 KiB  
Article
Efficient Quasi-Two-Dimensional Perovskite Light-Emitting Diodes Achieved through the Passivation of Multi-Fluorine Phosphate Molecules
by Peiding Li, Chunyu Wei, He Dong, Zhuolin Zhan, Yanni Zhu, Jie Hua, Gang Zhang, Chen Chen, Yuan Chai, Jin Wang and You Chao
Micromachines 2024, 15(6), 799; https://doi.org/10.3390/mi15060799 - 18 Jun 2024
Viewed by 887
Abstract
The surface morphology of perovskite films significantly influences the performance of perovskite light-emitting diodes (PeLEDs). However, the thin perovskite thickness (~10 nm) results in low surface coverage on the substrate, limiting the improvement of photoelectric performance. Here, we propose a molecular additive strategy [...] Read more.
The surface morphology of perovskite films significantly influences the performance of perovskite light-emitting diodes (PeLEDs). However, the thin perovskite thickness (~10 nm) results in low surface coverage on the substrate, limiting the improvement of photoelectric performance. Here, we propose a molecular additive strategy that employs pentafluorophenyl diphenylphosphinate (FDPP) molecules as additives. P=O and Pentafluorophenyl (5F) on FDPP can coordinate with Pb2+ to slow the crystallization process of perovskite and enhance surface coverage. Moreover, FDPP reduces the defect density of perovskite and enhances the crystalline quality. The maximum brightness, power efficiency (PE), and external quantum efficiency (EQE) of the optimal device reached 24,230 cd m−2, 82.73 lm W−1, and 21.06%, respectively. The device maintains an EQE of 19.79% at 1000 cd m−2 and the stability is further enhanced. This study further extends the applicability of P=O-based additives. Full article
(This article belongs to the Special Issue Prospective Outlook on Perovskite Materials and Devices)
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Review

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18 pages, 36209 KiB  
Review
Application of Metal Halide Perovskite in Internet of Things
by Zhihao Chai, Hui Lin, Hang Bai, Yixiang Huang, Zhen Guan, Fangze Liu and Jing Wei
Micromachines 2024, 15(9), 1152; https://doi.org/10.3390/mi15091152 - 14 Sep 2024
Viewed by 995
Abstract
The Internet of Things (IoT) technology connects the real and network worlds by integrating sensors and internet technology, which has greatly changed people’s lifestyles, showing its broad application prospects. However, traditional materials for the sensors and power components used in the IoT limit [...] Read more.
The Internet of Things (IoT) technology connects the real and network worlds by integrating sensors and internet technology, which has greatly changed people’s lifestyles, showing its broad application prospects. However, traditional materials for the sensors and power components used in the IoT limit its development for high-precision detection, long-term endurance, and multi-scenario applications. Metal halide perovskite, with unique advantages such as excellent photoelectric properties, an adjustable bandgap, flexibility, and a mild process, exhibits enormous potential to meet the requirements for IoT development. This paper provides a comprehensive review of metal halide perovskite’s application in sensors and energy supply modules within IoT systems. Advances in perovskite-based sensors, such as for gas, humidity, photoelectric, and optical sensors, are discussed. The application of indoor photovoltaics based on perovskite in IoT systems is also discussed. Lastly, the application prospects and challenges of perovskite-based devices in the IoT are summarized. Full article
(This article belongs to the Special Issue Prospective Outlook on Perovskite Materials and Devices)
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