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Micromachines
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Novel Diamond Electronic Devices
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Novel Diamond Electronic Devices

A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "D：Materials and Processing".

Deadline for manuscript submissions: closed (31 May 2023) | Viewed by 6342

Special Issue Editors

Prof. Dr. Bing Dai

E-Mail Website
Guest Editor
National Key Laboratory of Science and Technology on Advanced Composites in Special Environments, Harbin Institute of Technology, Harbin 150080, China
Interests: diamond growth; micro machining of ultra-hard materials; color centers in diamond; diamond power devices; devices for extreme environments
Prof. Dr. Jianlei Cui

E-Mail Website
Guest Editor
State Key Laboratory for Manufacturing Systems Engineering, Xi'an Jiaotong University, Xi’an 710049, China
Interests: laser micro/nano joining and welding technology; laser micro/nano fabrication; laser precision manufacturing technology
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

Diamond has the most interesting and extreme thermal, dielectric, electronic and mechanical properties. The benefits of using diamond for power electronic devices can be illustrated by a new figure of merit. The exploration of possible device applications, such as MEMS and devices through “elastic strain engineering” has been motivated by the significant advances in growth and electronic technologies of diamond. We would like to highlight recent developments on two specific problems of power electronic: thermal management and novel electronic devices. Indeed, diamond exhibits a unique combination of the highest electric breakdown field and thermal conduction that make it a potential candidate for novel electronic devices. Moreover, recent improvements in single crystal diamond growth have resulted in films with very high carrier mobility and high electric breakdown field that present a new interest for novel electronic devices. In addition, ultra-fast/ultra-short wavelength lasers provide a unique technological opportunity to precisely and efficiently micromachine materials with minimal thermal damage. There is an increasing demand to further develop the laser extreme machining technology to improve the machining quality, minimize the total machining time and increase the flexibility of machining complex patterns on diamond. In general, This Special Issue will provide a highly-visible, multi-disciplinary, freely-accessible collection of recent advances in the field of diamond growth, high power devices, diamond micromachining, novel mechanical properties and other related topics for their fundametal research and applications. 

Prof. Dr. Bing Dai
Prof. Dr. Jianlei Cui
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Micromachines is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • diamond growth
  • micro machining of ultra-hard materials
  • color centers in diamond
  • diamond power devices
  • devices for extreme environments
  • MEMS

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Published Papers (2 papers)

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Research

11 pages, 6878 KiB  
Article
Bottom-Up Cu Filling of High-Aspect-Ratio through-Diamond vias for 3D Integration in Thermal Management
by Kechen Zhao, Jiwen Zhao, Xiaoyun Wei, Xiaoyu Guan, Chaojun Deng, Bing Dai and Jiaqi Zhu
Micromachines 2023, 14(2), 290; https://doi.org/10.3390/mi14020290 - 22 Jan 2023
Cited by 4 | Viewed by 3198
Abstract
Three-dimensional integrated packaging with through-silicon vias (TSV) can meet the requirements of high-speed computation, high-density storage, low power consumption, and compactness. However, higher power density increases heat dissipation problems, such as severe internal heat storage and prominent local hot spots. Among bulk materials, [...] Read more.
Three-dimensional integrated packaging with through-silicon vias (TSV) can meet the requirements of high-speed computation, high-density storage, low power consumption, and compactness. However, higher power density increases heat dissipation problems, such as severe internal heat storage and prominent local hot spots. Among bulk materials, diamond has the highest thermal conductivity (≥2000 W/mK), thereby prompting its application in high-power semiconductor devices for heat dissipation. In this paper, we report an innovative bottom-up Cu electroplating technique with a high-aspect-ratio (10:1) through-diamond vias (TDV). The TDV structure was fabricated by laser processing. The electrolyte wettability of the diamond and metallization surface was improved by Ar/O plasma treatment. Finally, a Cu-filled high-aspect-ratio TDV was realized based on the bottom-up Cu electroplating process at a current density of 0.3 ASD. The average single-via resistance was ≤50 mΩ, which demonstrates the promising application of the fabricated TDV in the thermal management of advanced packaging systems. Full article
(This article belongs to the Special Issue Novel Diamond Electronic Devices)
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9 pages, 2834 KiB  
Article
Thermal Performance Improvement of AlGaN/GaN HEMTs Using Nanocrystalline Diamond Capping Layers
by Huaixin Guo, Yizhuang Li, Xinxin Yu, Jianjun Zhou and Yuechan Kong
Micromachines 2022, 13(9), 1486; https://doi.org/10.3390/mi13091486 - 7 Sep 2022
Cited by 7 | Viewed by 2030
Abstract
Nanocrystalline diamond capping layers have been demonstrated to improve thermal management for AlGaN/GaN HEMTs. To improve the RF devices, the application of the technology, the technological approaches and device characteristics of AlGaN/GaN HEMTs with gate length less than 0.5 μm using nanocrystalline diamond [...] Read more.
Nanocrystalline diamond capping layers have been demonstrated to improve thermal management for AlGaN/GaN HEMTs. To improve the RF devices, the application of the technology, the technological approaches and device characteristics of AlGaN/GaN HEMTs with gate length less than 0.5 μm using nanocrystalline diamond capping layers have been studied systematically. The approach of diamond-before-gate has been adopted to resolve the growth of nanocrystalline diamond capping layers and compatibility with the Schottky gate of GaN HEMTs, and the processes of diamond multi-step etching technique and AlGaN barrier protection are presented to improve the technological challenge of gate metal. The GaN HEMTs with nanocrystalline diamond passivated structure have been successfully prepared; the heat dissipation capability and electrical characteristics have been evaluated. The results show the that thermal resistance of GaN HEMTs with nanocrystalline diamond passivated structure is lower than conventional SiN-GaN HEMTs by 21.4%, and the mechanism of heat transfer for NDC-GaN HEMTs is revealed by simulation method in theory. Meanwhile, the GaN HEMTs with nanocrystalline diamond passivated structure has excellent output, small signal gain and cut-off frequency characteristics, especially the current–voltage, which has a 27.9% improvement than conventional SiN-GaN HEMTs. The nanocrystalline diamond capping layers for GaN HEMTs has significant performance advantages over the conventional SiN passivated structure. Full article
(This article belongs to the Special Issue Novel Diamond Electronic Devices)
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