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Micromachines
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Novel Electronics Devices Integrated with 2D Quantum Materials
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Novel Electronics Devices Integrated with 2D Quantum Materials

A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "A：Physics".

Deadline for manuscript submissions: closed (30 April 2023) | Viewed by 7023

Special Issue Editor

Dr. Peng Song

E-Mail Website
Guest Editor
School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore
Interests: spintronic devices; device physics; 2D materials; memory and computing devices; quantum materials and technologies

Special Issue Information

Dear Colleagues,

Two-dimensional quantum materials have emerged as strong competitors to build next-generation electronic and optoelectronic devices in multiple frontiers. Among many others, some exciting progresses are field-effect transistors with ultralow switching voltage and subnanometer channel length, electronic devices that are extremely sensitive to magnetic fields. Atomic structures and underlying novel physics are the key driving forces that push progress in the field. Meanwhile, the richness of the material system brings tremendous opportunity and potential to design even more novel electronic devices with 2D quantum materials. It is thus timely and of great interest to publish a Special Issue to communicate the cutting-edge research activities in this fast-evolving direction. Accordingly, this Special Issue seeks to showcase research papers, short communications, and review articles that focus on the development of novel electronic devices based on 2D quantum materials.

Dr. Peng Song
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Micromachines is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • nanoelectronic devices
  • optoelectronics
  • 2D materials
  • quantum materials

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Published Papers (3 papers)

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Research

15 pages, 66052 KiB  
Article
Performance Analysis of an α-Graphyne Nano-Field Effect Transistor
by Habibullah Khan, Md. Monirul Islam, Rajnin Imran Roya, Sariha Noor Azad and Mahbub Alam
Micromachines 2023, 14(7), 1385; https://doi.org/10.3390/mi14071385 - 6 Jul 2023
Viewed by 2006
Abstract
Graphyne has attractive electronic properties that make it a possible replacement of silicon in FET technology. In FET technology, the goal is to achieve low power dissipation and lower subthreshold swing. In this study, we focused on achieving these goals and studied the [...] Read more.
Graphyne has attractive electronic properties that make it a possible replacement of silicon in FET technology. In FET technology, the goal is to achieve low power dissipation and lower subthreshold swing. In this study, we focused on achieving these goals and studied the electronic properties of α-graphyne nanoribbons. We simulated the transfer and output characteristics of an α-graphyne ballistic nanoribbon FET. We used the tight-binding model with nearest-neighbor approximation to obtain the band structure which gives the same band structure as the one found from the DFT. In order to simulate the I-V characteristics of the transistor we used the non-equilibrium Green’s function (NEGF) formalism. The results show that the modeled FET can provide a high Ion/Ioff ratio and low subthreshold swing. We also studied the effects of defects as defects cannot be avoided in any practical device. The study shows that the Ion/Ioff ratio and subthreshold swing improves as defects are added, but the delay time and dynamic power dissipation worsen. Full article
(This article belongs to the Special Issue Novel Electronics Devices Integrated with 2D Quantum Materials)
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12 pages, 3573 KiB  
Article
Photodetection Enhancement via Graphene Oxide Deposition on Poly 3-Methyl Aniline
by Asmaa M. Elsayed, Fatemah H. Alkallas, Amira Ben Gouider Trabelsi, Salem AlFaify, Mohd Shkir, Tahani A. Alrebdi, Kholoud S. Almugren, Feodor V. Kusmatsev and Mohamed Rabia
Micromachines 2023, 14(3), 606; https://doi.org/10.3390/mi14030606 - 6 Mar 2023
Cited by 16 | Viewed by 1735
Abstract
A graphene oxide (GO)/poly 3-methyl aniline (P3MA) photodetector has been developed for light detection in a broad optical region: UV, Vis, and IR. The 3-methyl aniline was initially synthesized via radical polymerization using an acid medium, i.e., K2S2O8 [...] Read more.
A graphene oxide (GO)/poly 3-methyl aniline (P3MA) photodetector has been developed for light detection in a broad optical region: UV, Vis, and IR. The 3-methyl aniline was initially synthesized via radical polymerization using an acid medium, i.e., K2S2O8 oxidant. Consequently, the GO/P3MA composite was obtained through the adsorption of GO into the surface of P3MA. The chemical structure and optical properties of the prepared materials have been illustrated via XRD, FTIR, SEM, and TEM analysis. The absorbance measurements demonstrate good optical properties in the UV, Vis, and near-IR regions, although a decrease in the bandgap from 2.4 to 1.6 eV after the composite formation was located. The current density (Jph) varies between 0.29 and 0.68 mA·cm−2 (at 2.0 V) under dark and light, respectively. The photodetector has been tested using on/off chopped light at a low potential, in which the produced Jph values decrease from 0.14 to 0.04 µA·cm−2, respectively. The GO/P3MA photodetector exhibits excellent R (and D) values of 4 and 2.7 mA·W−1 (0.90 × 109 and 0.60 × 109 Jones) in the UV (340 nm) and IR (730 nm) regions, respectively. The R and D values obtained here make the prepared photodetector a promising candidate for future light detection instruments. Full article
(This article belongs to the Special Issue Novel Electronics Devices Integrated with 2D Quantum Materials)
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8 pages, 1714 KiB  
Article
Optimization of the Field Plate Design of a 1200 V p-GaN Power High-Electron-Mobility Transistor
by Chia-Hao Liu, Chong-Rong Huang, Hsiang-Chun Wang, Yi-Jie Kang, Hsien-Chin Chiu, Hsuan-Ling Kao, Kuo-Hsiung Chu, Hao-Chung Kuo, Chih-Tien Chen and Kuo-Jen Chang
Micromachines 2022, 13(9), 1554; https://doi.org/10.3390/mi13091554 - 19 Sep 2022
Cited by 1 | Viewed by 2666
Abstract
This study optimized the field plate (FP) design (i.e., the number and positions of FP layers) of p-GaN power high-electron-mobility transistors (HEMTs) on the basic of simulations conducted using the technology computer-aided design software of Silvaco. Devices with zero, two, and three FP [...] Read more.
This study optimized the field plate (FP) design (i.e., the number and positions of FP layers) of p-GaN power high-electron-mobility transistors (HEMTs) on the basic of simulations conducted using the technology computer-aided design software of Silvaco. Devices with zero, two, and three FP layers were designed. The FP layers of the HEMTs dispersed the electric field between the gate and drain regions. The device with two FP layers exhibited a high off-state breakdown voltage of 1549 V because of the long distance between its first FP layer and the channel. The devices were subjected to high-temperature reverse bias and high-temperature gate bias measurements to examine their characteristics, which satisfied the reliability specifications of JEDEC. Full article
(This article belongs to the Special Issue Novel Electronics Devices Integrated with 2D Quantum Materials)
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