THz On-Chip Devices and Their Applications

A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "E:Engineering and Technology".

Deadline for manuscript submissions: closed (22 September 2022) | Viewed by 4709

Special Issue Editors


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Guest Editor
1. Institute for Beam Physics and Technology (IBPT), Department of Accelerator Research and Development + Operations II, Karlsruhe Institute of Technology (KIT), Karlsruhe, Germany
2. Honorable Guest Professor of Shizuoka University, Graduate School of Science and Technology, Shizuoka University, Shizuoka, Japan
Interests: THz techniques; diagnosis R&D; accelerator technology; real-world applications; nanovision

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Guest Editor
Communication Technology for IIoT, Institute for Electrical Information Technology, TU Clausthal, 38678 Clausthal-Zellerfeld, Germany
Interests: on-chip THz devices; microwave photonics; sensors and measurement systems

Special Issue Information

Dear colleagues,

Despite enormous research efforts and the beginning of commercial exploitation, THz technology and its applications are still an emerging field. Benefitting from advances in manufacturing technology as well as from the small dimensions coming with wavelengths of 1 mm and below, an increasing number of THz solutions, including near-field effect-based structures, are becoming available as on-chip THz devices. Starting with relatively simple detectors or sources, e.g., electronic–photonic integration can enhance functionality and enable more complex devices for applications in engineering such as high-speed communication or non-destructive testing and physics such as in particle accelerators or spectroscopy.

Consequently, we would like to run the gamut from on-chip THz devices and their manufacturing to applications in science and technology. Thus, we look forward to receiving your high-quality contributions in these fields in different formats, such as research papers or review articles.

Dr. Erik Bründermann
Prof. Dr. Niels Neumann
Guest Editors

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Keywords

  • THz
  • sub-mm wave
  • far-infrared
  • THz technology
  • THz detector
  • THz source
  • THz spectrometer
  • THz on-chip device
  • THz field-enhancing components
  • THz measurements
  • THz communications
  • THz near-field based structures

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Published Papers (2 papers)

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Research

18 pages, 3820 KiB  
Article
Single/Dual/Triple Broadband Metasurface Based Polarisation Converter with High Angular Stability for Terahertz Applications
by Shyam Sundar Pati and Swaroop Sahoo
Micromachines 2022, 13(9), 1547; https://doi.org/10.3390/mi13091547 - 18 Sep 2022
Cited by 8 | Viewed by 2096
Abstract
This paper presents design and characterisation of a new compact metasurface based linear polarisation converter for terahertz applications. The metasurface unit cell with periodicity of 0.292λ0 consists of an asymmetrically oriented planar double semicircular goblet-shaped resonators. It is printed on a [...] Read more.
This paper presents design and characterisation of a new compact metasurface based linear polarisation converter for terahertz applications. The metasurface unit cell with periodicity of 0.292λ0 consists of an asymmetrically oriented planar double semicircular goblet-shaped resonators. It is printed on a polydimethylsiloxane (PDMS) dielectric substrate backed by a gold layer that acts as a ground plane. This metasurface structure exhibits a broadband cross-polarisation conversion in the frequency range of 0.72–0.99 THz with a polarisation conversion ratio (PCR) > 95% and angular stability > 40 for both TE and TM modes. However, the PCR for the single band is >99% at resonant frequencies of 0.755 and 0.94 THz, while the optimised design shows 100% PCR over a BW of 95 GHz. Furthermore, slight modification and optimisation of the broadband design results in quad-ring and slotted DSGRs that produce dual and triple broadband polarisation conversion, respectively. The quad-ring DSGR performs polarisation conversion for frequency range of 0.70–1.08 and 1.61–1.76 THz while the slotted DSGR shows the triple broadband cross-conversion for frequency range of 0.67–0.85, 1.04–1.11, and 1.62–1.76 THz with PCR > 95%. This design is simple, easy to modify to implement single and multi broadband polarisation conversion with high PCR at terahertz regime. In addition to that, it is easy to fabricate and integrate with other components like multiple-input multiple-output terahertz antennas for mutual coupling reduction. Full article
(This article belongs to the Special Issue THz On-Chip Devices and Their Applications)
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8 pages, 2416 KiB  
Communication
Wavelength Modulation Characteristics of Metal Gratings on Si-Based Blocked-Impurity-Band (BIB) Terahertz Detectors
by Yulu Chen, Zuoru Dong, Yangzhou Zhou, Jiajia Tao, Wulin Tong, Yifei Wu, Wenhui Liu, Bingbing Wang, Xiaowan Dai and Xiaodong Wang
Micromachines 2022, 13(5), 811; https://doi.org/10.3390/mi13050811 - 23 May 2022
Cited by 5 | Viewed by 1788
Abstract
In this work, the wavelength selection characteristics of metal gratings on Si-based blocked-impurity-band (BIB) detectors in the terahertz band were studied by performing experiments and a finite difference time domain (FDTD) simulation. The transmission spectra of metal gratings with different periods on 130 [...] Read more.
In this work, the wavelength selection characteristics of metal gratings on Si-based blocked-impurity-band (BIB) detectors in the terahertz band were studied by performing experiments and a finite difference time domain (FDTD) simulation. The transmission spectra of metal gratings with different periods on 130 μm intrinsic Si substrates were measured. When the metal grating period increased from 16 to 20 to 32 μm, the peak position of the spectrum moved from 21.71 to 24.50 to 36.59 μm, which is in good agreement with the FDTD simulation results. The structure with the period of 32 μm shows the best wavelength selective transmission characteristics. Then, the bare Si-based BIB devices and metal grating/Si-based BIB hybrid devices with different thicknesses of blocking layers of 2 and 5 μm were fabricated. By covering different periods of metal gratings for the devices with a thicker blocking layer of 2 μm, we obtained more effective wavelength selection characteristics and stronger response spectra enhancement ratios that were about 1.3, 2.4, or 1.9 times. This was mainly due to the localized optical field enhancement effect of the plasmons resonance in metal gratings, which decays exponentially in a vertical direction. Our results demonstrate a new approach for the Si-based BIB detector to realize multiband selective detection applications. Full article
(This article belongs to the Special Issue THz On-Chip Devices and Their Applications)
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