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Photonics
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III-V Semiconductors Optoelectronic Materials and Devices
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III-V Semiconductors Optoelectronic Materials and Devices

A special issue of Photonics (ISSN 2304-6732). This special issue belongs to the section "Optoelectronics and Optical Materials".

Deadline for manuscript submissions: closed (15 December 2023) | Viewed by 6238

Special Issue Editors

Dr. Xiaoying He

E-Mail Website
Guest Editor
School of Electronic Engineering, Beijing University of Posts and Telecommunications, Beijing, China
Interests: tunable semiconductor lasers; mode-locked laser; optical detector; optoelectronic neuromorphic devices
Special Issues, Collections and Topics in MDPI journals
Dr. Chong Li

E-Mail Website
Guest Editor
Key Laboratory of Optoelectronics Technology, Beijing University of Technology, Beijing 100124, China
Interests: silicon photonics; silicon-based photodetector; visible light communication; avalanche photodetector; near-infrared imaging
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

III-V semiconductor optoelectronic materials and devices, including, but not limited to conducting and semiconducting materials used in integrated opto-electronic circuits, light emitting diodes and display devices, lasers, solar cells, photo detectors, optoelectronic sensors, etc., have dramatically impacted the way humans live in the twentieth and twenty-first centuries.

Specially, new technology, e.g. nanotechnology, neuromorphic computing technology is introduced into III-V semiconductor materials to develop quantum dot laser, quantum dot LED, quantum dot detectors and so on. This special issue will cover the current status, prospects, and challenges of the field in using III-V semiconductor materials and optoelectronic devices.

We are pleased to invite you to submit your research and review articles in this Special Issue.

This Special Issue aims to establishing III-V Semiconductors Optoelectronic Materials and Devices as a leading venue for publishing high impact fundamental research in optics and photonics. This Special issue welcomes both theoretical (simulation) and experimental research. This Special issue presents a collection of original state-of-the-art research and review articles dealing with III-V semiconductors materials and optoelectronic devices and their application in a broad sense, sometimes with special emphasis on the hybrid integrated optoelectronics on silicon. This issue arm to a collection of at least 10 articles, and the Special Issue be printed in book form if this number is reached.

In this Special Issue, original research articles and reviews are welcome. Research areas may include (but not limited to) the following:

  • Semiconductor lasers and SOA
  • VCSEL
  • Frequency combs
  • Coupled lasers
  • Hybrid integrated lasers
  • Optical detectors
  • Optical modulator
  • Quantum dot laser
  • AWG
  • III-V compound semiconductor nanowires or quantum dots for optoelectronics
  • Hybrid integrated optoelectronic chips
  • Micro-LED
  • VCSEL, SOA or semiconductor ring cavity for neuromorphic computing network architectures
  • Photonic circuit design
  • III-V semiconductor material integrated with Si, SiN, 2D material

I/We look forward to receiving your contributions.

Dr. Xiaoying He
Dr. Chong Li
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Photonics is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • III-V Semiconductor material
  • semiconductor laser
  • semiconductor detector
  • VCSEL, SOA
  • AWG
  • nanowire, quantum dots, neuromorphic computing

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Published Papers (4 papers)

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Research

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18 pages, 5108 KiB  
Article
Investigations of Nanoscale Columnar AlxGa1-xN/AlN Heterostructures Grown on Silicon Substrates with Different Modifications of the Surface
by Pavel Vladimirovich Seredin, Nikolay Kurilo, Dmitry L. Goloshchapov, Vladimir Kashkarov, Aleksandr S. Lenshin, Nikita Buylov, Dmitry Nesterov, Andrey Mizerov, Sergey A. Kukushkin, S. Timoshnev, K. Yu. Shubina and M. S. Sobolev
Photonics 2023, 10(11), 1209; https://doi.org/10.3390/photonics10111209 - 30 Oct 2023
Viewed by 1052
Abstract
The growth of nanoscale columnar AlxGa1-xN/AlN heterostructures on the surface of silicon substrates using plasma-activated nitrogen molecular-beam epitaxy was investigated in this work. Silicon substrates include atomic-smooth cSi substrate, Si substrate with a transition layer of porous silicon porSi/cSi [...] Read more.
The growth of nanoscale columnar AlxGa1-xN/AlN heterostructures on the surface of silicon substrates using plasma-activated nitrogen molecular-beam epitaxy was investigated in this work. Silicon substrates include atomic-smooth cSi substrate, Si substrate with a transition layer of porous silicon porSi/cSi and a hybrid substrate involving a silicon carbide layer grown with matched substitution of the atoms on the surface of porous silicon SiC/porSi/cSi. A complex analysis performed using a set of structural and spectroscopic techniques demonstrated that the epitaxial growth of the nuclear AlN layer on all types of the substrates in a N-enriched environment resulted in the formation of AlxGa1-xN/AlN heterostructures with a Ga-polar surface, which was realized only on the SiC/porSi/cSi substrate. The layer of AlxGa1-xN on cSi and porSi/cSi substrates was in the state of disordered alloy with an excess of gallium atom content. It was shown that a great difference in the lattice parameters of a substrate–film pair resulted not only in the appearance of a number of various defects but also in a considerable effect on the chemical process of the formation of the alloys, in our case, the AlxGa1-xN alloy. It was shown that nanoscale columns of AlxGa1-xN formed on SiC/porSi/cSi substrate were inclined relative to the c-axis, which was connected with the features of the formation of a SiC layer by the matched substitution of the atoms on the porous Si substrate, resulting in the formation of the inclined (111) SiC facets at the boundary of the (111) Si surface and pores in Si. Optical studies of the grown samples demonstrated that the optical band-to-band transition for the AlxGa1-xN alloy with Eg = 3.99 eVB was observed only for the heterostructure grown on the SiC/porSi/cSi substrate. A qualitative model is proposed to explain the difference in the formation of AlxGa1-xN layers on the substrates of cSi, porSi/cSi and SiC/porSi/cSi. The results obtained in our work demonstrate the availability of using SiC/porSi/cSi substrates for the integration of silicon technology and that used for the synthesis of nanoscale columnar AlxGa1-xN heterostructures using plasma-activated molecular-beam epitaxy with a nitrogen source. Full article
(This article belongs to the Special Issue III-V Semiconductors Optoelectronic Materials and Devices)
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19 pages, 3826 KiB  
Article
SOA-MZI Differential Transformation Approach Applied on Simultaneous Electro-Optical Mixing
by Hassan Termos and Ali Mansour
Photonics 2023, 10(6), 649; https://doi.org/10.3390/photonics10060649 - 3 Jun 2023
Cited by 1 | Viewed by 1512
Abstract
We experimentally incubate a ground-breaking design, for the first time, of concurrent electro-optical semiconductor optical amplifier Mach–Zehnder interferometer mixing (SOA-MZI) based on a differential transformation methodology. Projecting the simultaneous electro-optical mixing system and improving its efficiency and quality achievement in optical and electrical [...] Read more.
We experimentally incubate a ground-breaking design, for the first time, of concurrent electro-optical semiconductor optical amplifier Mach–Zehnder interferometer mixing (SOA-MZI) based on a differential transformation methodology. Projecting the simultaneous electro-optical mixing system and improving its efficiency and quality achievement in optical and electrical features is a crucial task due to the characteristics of an optical pulse source (OPS) operating with a repetition rate of f= 58.5 GHz and a pulse width duration of 1 picosecond (ps). The resultant of the contemporaneous electro-optical mixing exhibits exceptional passive power stability, reaching 0.8% RMS over a two-hour period. Furthermore, when the optical bandpass filter is controlled at the data wavelength of 1540 nm, we achieve up to 30 dBm of the overall mean output power with an optical conversion gain of 46 dB and an exceptionally high optical signal-to-noise ratio reaching 80 dB. Using orthogonal frequency division multiplexing (OFDM) signals, each data subcarrier is modulated using 128 quadratic amplitude modulation (128-QAM) at carrier frequencies fk and simultaneously up-mixed to high aim frequencies nf±fk at the SOA-MZI output. Additionally, the resulting OFDM_128-QAM up-mixed signal is examined using the specifications for the error vector magnitudes (EVMs) and the electrical conversion gains (ECGs). The SOA-MZI mixing experiment can handle high frequencies up to 120 GHz. Positive ECGs are followed by a sharp reduction over the entire band of the aim frequencies. The highest frequency range achieved during the realistic investigation is shown at 2f+f4= 120 GHz, where the EVM reaches 8% with a symbol rate of 15 GSymb/s. Furthermore, the concurrent OFDM_128-QAM up-mixed signal achieves an absolute maximum bit rate of 80.4 Gbit/s. The investigation into the simultaneous electro-optical mixing regime is finally supported by unmatched characterization improvements. Full article
(This article belongs to the Special Issue III-V Semiconductors Optoelectronic Materials and Devices)
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11 pages, 62214 KiB  
Article
The Effect of GaSb Substrate Oxidation Layer on InAs/GaSb Type II Superlattice
by Jiabo Liu, Lianqing Zhu, Ruixin Gong, Bingfeng Liu, Mingliang Gong, Qingsong Feng, Zhiping Chen, Dongliang Zhang, Xiantong Zheng, Yulin Feng, Lidan Lu and Yuan Liu
Photonics 2023, 10(3), 345; https://doi.org/10.3390/photonics10030345 - 22 Mar 2023
Cited by 1 | Viewed by 2075
Abstract
Type-II superlattices (T2SLs) are emerging as next-generation materials for infrared detectors. The epitaxial quality of T2SLs is of great importance to the performance of infrared detectors such as dark current and detectivity. Herein, we explore the effect of the native GaSb oxide layer [...] Read more.
Type-II superlattices (T2SLs) are emerging as next-generation materials for infrared detectors. The epitaxial quality of T2SLs is of great importance to the performance of infrared detectors such as dark current and detectivity. Herein, we explore the effect of the native GaSb oxide layer on the surface morphology and crystal quality of InAs/GaSb T2SLs grown with molecular beam epitaxy. The experimental results demonstrate that the thickness of the oxidation layer on GaSb substrates gradually increases over time and is saturated at around 73 Å in the natural oxidation condition. Moreover, the oxidation process is sensitive to humidity. As the thickness of the GaSb oxide layer increases from 18.79 Å to 61.54 Å, the full width at half maximum of the first satellite peak increases from 38.44 to 61.34 arcsec in X-ray diffraction measurements, and the root mean square roughness increases from 0.116 nm to 0.171 nm in atomic force microscopy measurements. Our results suggest that the thickness of the GaSb oxide layer should be less than 55 Å to obtain smooth buffer layers and qualified superlattices. The work provides an optimized direction for achieving high-quality superlattices for infrared optoelectronic devices. Full article
(This article belongs to the Special Issue III-V Semiconductors Optoelectronic Materials and Devices)
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8 pages, 1782 KiB  
Brief Report
Ultra-Short Lifetime of Intersubband Electrons in Resonance to GaN-Based LO-Phonons at 92 meV
by Daniel Hofstetter, Hans Beck and David P. Bour
Photonics 2023, 10(8), 909; https://doi.org/10.3390/photonics10080909 - 7 Aug 2023
Viewed by 998
Abstract
In this study, we report on the ultra-short lifetime of excited intersubband electrons in a 38 Å wide AlGaN/GaN-based quantum well. The rapid decay of these charge carriers occurs due to a resonance between the relevant intersubband transition energy and the size of [...] Read more.
In this study, we report on the ultra-short lifetime of excited intersubband electrons in a 38 Å wide AlGaN/GaN-based quantum well. The rapid decay of these charge carriers occurs due to a resonance between the relevant intersubband transition energy and the size of the GaN-based LO-phonon at 92 meV. Based on the experimentally observed Lorentz-shaped intersubband emission peak with a spectral width of roughly 6 meV (48 cm−1) respecting the Fourier transform limit, a very short lifetime, namely 111 fs, could be calculated. By comparing this lifetime to the existing literature data, our value confirms the potential high-speed capability of III-nitride-based optoelectronics. Full article
(This article belongs to the Special Issue III-V Semiconductors Optoelectronic Materials and Devices)
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