Next-Generation Vertical-Cavity Surface-Emitting Lasers

A special issue of Photonics (ISSN 2304-6732). This special issue belongs to the section "Lasers, Light Sources and Sensors".

Deadline for manuscript submissions: 10 December 2024 | Viewed by 1148

Special Issue Editors


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Guest Editor
Institute of Microelectronics, Chinese Academy of Sciences, 3 Beitucheng West Road, Chaoyang District, Beijing 100029, China
Interests: vertical surface emitters; optical amplifiers; optoelectronic materials and devices

E-Mail Website
Guest Editor
Institute of Semiconductors, Chinese Academy of Sciences, A35 Qinghua East Road, Haidian District, Beijing 100083, China
Interests: vertical surface emitters; distributed feedback lasers; photonics integrated circuits

Special Issue Information

Dear Colleagues,

Vertical-cavity surface-emitting lasers (VCSELs) have become light sources of great importance for industrial, sensing and consumer applications. They offer many inherent advantages, such as efficient high-speed modulation at low currents, superior fiber coupling efficiency, wafer-level fabrication and scalability in high-density array architectures.

At present, the growing bandwidth demands for data communication and new applications under research, including autonomous vehicle systems (LiDAR in particular), gas detection, biomedical sensing, imaging, quantum computing, chip-scale atomic devices, etc., drive the significant development of VCSEL technology. Novel trends and concepts in the design, configuration and fabrication of VCSELs emerge to meet the specification requirements of the next generation of photonic systems.

This Special Issue aims to present recent progress and original state-of-the-art research dealing with the advanced design, fabrication, characterization and application of various types of VCSELs. In this Special Issue, original research articles and reviews are welcome. We are pleased to invite you to submit your contribution to this Special Issue. Research areas may include (but are not limited to) the following:

  • High power VCSELs;
  • High-speed VCSELs;
  • Tunable VCSELs;
  • VCSELs based on new material systems;
  • Novel VCSEL structure;
  • Optical mode control in VCSELs;
  • VCSEL-based communication;
  • Characterization methods;
  • Novel applications.

We look forward to receiving your contributions.

Dr. Yun Sun
Dr. Qiang Kan
Guest Editors

Manuscript Submission Information

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Keywords

  • VCSELs
  • laser array
  • optical modes
  • communication
  • sensing
  • dynamics
  • photonics

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Published Papers (1 paper)

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Research

13 pages, 5289 KiB  
Article
Structure Design of UVA VCSEL for High Wall Plug Efficiency and Low Threshold Current
by Bing An, Yukun Wang, Yachao Wang, Zhijie Zou, Yang Mei, Hao Long, Zhiwei Zheng and Baoping Zhang
Photonics 2024, 11(11), 1012; https://doi.org/10.3390/photonics11111012 - 27 Oct 2024
Viewed by 710
Abstract
Vertical-cavity surface emitting lasers in UVA band (UVA VCSELs) operating at a central wavelength of 395 nm are designed by employing PICS3D(2021) software. The simulation results indicate that the thickness of the InGaN quantum well and GaN barrier layers affect the emission efficiency [...] Read more.
Vertical-cavity surface emitting lasers in UVA band (UVA VCSELs) operating at a central wavelength of 395 nm are designed by employing PICS3D(2021) software. The simulation results indicate that the thickness of the InGaN quantum well and GaN barrier layers affect the emission efficiency of UVA VCSELs greatly, suggesting an optimal thicknesses of 2.2 nm for the well layer and 2.7 nm for the barrier layer. Additionally, an overall consideration of threshold current, series resistance, photoelectric conversion efficiency, and optical output power results in the optimized thickness of the ITO current spreading layer, ~20 nm. Furthermore, by employing a five-pair Al0.15Ga0.85N/GaN multi-quantum barrier electron blocking layer (EBL) instead of a single Al0.2Ga0.8N EBL, the device shows a ~51% enhancement in the optical output power and a ~48% reduction in the threshold current. The number of distributed Bragg reflector (DBR) pairs also plays crucial roles in the device’s photoelectric performance. The device designed in this study demonstrates a minimum lasing threshold of 1.16 mA and achieves a maximum wall plug efficiency of approximately 5%, outperforming other similar studies. Full article
(This article belongs to the Special Issue Next-Generation Vertical-Cavity Surface-Emitting Lasers)
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