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Photonics
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Photonics Integration on Silicon-on-Insulator and Thin-Film Lithium Niobate Platforms
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Photonics Integration on Silicon-on-Insulator and Thin-Film Lithium Niobate Platforms

A special issue of Photonics (ISSN 2304-6732). This special issue belongs to the section "Optoelectronics and Optical Materials".

Deadline for manuscript submissions: closed (30 June 2024) | Viewed by 5794

Special Issue Editor

Dr. Bingxi Xiang

E-Mail Website
Guest Editor
College of New Materials and New Energies, Shenzhen Technology University, Shenzhen 518118, China
Interests: lithium niobate photonic integrated devices; optical thin film materials

Special Issue Information

Dear Colleagues,

Integrated photonics has emerged as a promising technology for developing cost-effective and scalable optical solutions for a wide range of applications, such as communication, sensing, and computation. Among the various platforms developed in integrated photonics, silicon on insulator (SOI) and thin-film lithium niobate (TFLN) have attracted considerable attention.

This Special Issue aims to present the latest research on and development activities in photonics integration technologies on the SOI and TFLN platforms, covering passive components and various active devices. The Special Issue invites original and review articles on the design and fabrication of photonic devices using SOI and TFLN, exploring their tremendous potential in communication, computation, quantum information, and other fields. Potential topics include, but are not limited to, the following:

  • Novel waveguide structures;
  • Lasers and alternative light sources;
  • Microwave photonics;
  • Optical detectors and sensors;
  • Nonlinear optics;
  • Metasurfaces and metamaterials;
  • Microcavities and photonic crystals;
  • Quantum optical devices.

Dr. Bingxi Xiang
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Photonics is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • integrated photonics
  • silicon on insulator
  • thin-film lithium niobate/lithium niobate on insulator

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Published Papers (3 papers)

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Research

14 pages, 5736 KiB  
Article
Design and Optimization of a High-Efficiency 3D Multi-Tip Edge Coupler Based Lithium Niobate on Insulator Platform
by Tian Zhang, Jinye Li, Mingxuan Li and Jianguo Liu
Photonics 2024, 11(2), 134; https://doi.org/10.3390/photonics11020134 - 31 Jan 2024
Cited by 1 | Viewed by 1841
Abstract
Fiber-chip edge couplers can minimize mode mismatch in integrated lithium niobate (LiNbO3) photonics via facilitating broad optical bandwidth coupling between optical fibers and waveguide circuits. We designed a high-efficiency multi-tip edge coupler utilizing the lithium niobate on insulator (LNOI) platform for [...] Read more.
Fiber-chip edge couplers can minimize mode mismatch in integrated lithium niobate (LiNbO3) photonics via facilitating broad optical bandwidth coupling between optical fibers and waveguide circuits. We designed a high-efficiency multi-tip edge coupler utilizing the lithium niobate on insulator (LNOI) platform for achieving superior fiber-to-chip coupling. The device comprises a bilayer LN inversely tapered waveguide, three 3D inversely tapered waveguides, and a silicon oxynitride (SiON) cladding waveguide (CLDWG). Finite difference method (FDM) and eigenmode expansion (EME) simulations were utilized to simulate and optimize the edge coupler structure specifically within the 1550 nm band. This coupler demonstrates a low fiber-chip coupling loss of 0.0682/0.0958 dB/facet for TE/TM mode at 1550 nm when interfaced with a commercially cleaved single-mode fiber (SMF) with a mode field diameter (MFD) of approximately 8.2 μm. Moreover, the 1 dB bandwidth of the coupler is 270 nm for the TE mode and 288 nm for the TM mode. Notably, the coupler exhibits a relatively large tolerance for optical misalignment owing to its large mode spot size of up to 4 μm. Given its ultra-low loss, high-efficiency ultra-broadband capabilities, and substantial tolerance features, this proposed device provides a paradigm for fiber-to-chip edge coupling within lithium niobate photonics. Full article
(This article belongs to the Special Issue Photonics Integration on Silicon-on-Insulator and Thin-Film Lithium Niobate Platforms)
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8 pages, 2003 KiB  
Communication
The Design and Characterization of an Ultra-Compact Asymmetrical Multimode Interference Splitter on Lithium Niobate Thin Film
by Dechen Li, Jinye Li, Run Li and Jianguo Liu
Photonics 2024, 11(1), 60; https://doi.org/10.3390/photonics11010060 - 5 Jan 2024
Cited by 4 | Viewed by 1980
Abstract
We propose and demonstrate a high-performance asymmetrical multimode interference splitter on X-cut lithium niobate on insulator (LNOI) with an ultra-compact size of 5.8 μm × (26.4–35.6) μm. A rectangle with a small region is removed from the upper left corner of the multimode [...] Read more.
We propose and demonstrate a high-performance asymmetrical multimode interference splitter on X-cut lithium niobate on insulator (LNOI) with an ultra-compact size of 5.8 μm × (26.4–35.6) μm. A rectangle with a small region is removed from the upper left corner of the multimode interference (MMI) coupler to achieve a variable splitting ratio. Here, we design and characterize MMIs in six different distribution ratios ranging from 50:50 to 95:5 on a 600 nm thick LNOI. Based on the cascade structure, the linear fitting method accurately shows the device loss (~0.1–0.9 dB). Our fabricated devices demonstrate robustness across a 30 nm optical bandwidth (1535–1565 nm). In addition, we numerically simulate the Z-cut LNOI, showing that the structure corresponding to the TM mode can also achieve a good variable splitting ratio. Full article
(This article belongs to the Special Issue Photonics Integration on Silicon-on-Insulator and Thin-Film Lithium Niobate Platforms)
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12 pages, 18703 KiB  
Article
RF Interconnection Design of Bump Bonding with a Dislocation Package Structure towards Electro-Optic Modulation Applications
by Jiahao Peng, Xiaofeng Wang, Libo Wang, Yang Li, Runhao Liu, Shiyao Deng, Heyuan Guan and Huihui Lu
Photonics 2023, 10(12), 1348; https://doi.org/10.3390/photonics10121348 - 7 Dec 2023
Viewed by 1349
Abstract
Bonding technology can be an important component of packaging for photonic chips, such as electro-optic (EO) modulators and other active function devices. In general, an EO modulator chip can achieve a broader 3 dB EO bandwidth than its packaging device, as the packaging [...] Read more.
Bonding technology can be an important component of packaging for photonic chips, such as electro-optic (EO) modulators and other active function devices. In general, an EO modulator chip can achieve a broader 3 dB EO bandwidth than its packaging device, as the packaging design and structure can technically limit modulation performance. Recently, bump bonding has been shown to be a good candidate for the EO interconnection technique, which has a higher transmission bandwidth than wire bonding. In this article, we propose a design for radio frequency (RF) interconnection of bump bonding with a dislocation packaging (BBDP) structure. Through simulation calculations and analysis, the proposed BBDP structure shows a 3 dB transmission bandwidth of approximately 145 GHz, which is 52.6% better than one using optimized wire-bonding structures (95 GHz). The proposed packaging structure presents an important alternative method for ultrahigh speed optical modulation applications. Full article
(This article belongs to the Special Issue Photonics Integration on Silicon-on-Insulator and Thin-Film Lithium Niobate Platforms)
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