Photonic Integration: Technologies and Applications

A special issue of Photonics (ISSN 2304-6732). This special issue belongs to the section "Optoelectronics and Optical Materials".

Deadline for manuscript submissions: closed (31 December 2021) | Viewed by 7388

Special Issue Editors


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Guest Editor
Center for Photonics and Quantum Materials, Skolkovo Institute of Science and Technology (Skoltech), Moscow, Russia
Interests: photonics; optical communications; optical networks; optical computing; optical signal processing

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Guest Editor
Institute for Microwave Technology and Photonics, Technical University of Darmstadt, Karolinenpl. 5, 64289 Darmstadt, Germany
Interests: orbital angular momentum; chip; metamaterials

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Guest Editor
College Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
Interests: nanophotonics; acoustic metamaterials; optical 3D printing

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Guest Editor
TU/e Institute for Photonic Integration (IPI), Eindhoven, The Netherlands
Interests: photonic terahertz systems

Special Issue Information

Dear Colleagues,

Photonic integration appears to be a revolutionary technological breakthrough similar to the one that happened with electronics in the 20th century. It has put photonic technologies on a new, dramatically growing track. The development of ultrasmall and high-bandwidth electro-optic modulators, low-noise frequency synthesizers, chip-scale signal processors with orders-of-magnitude enhanced spectral resolution, plus complete integration of semiconductor-based light sources, modulators, and detectors in a single photonic chip has ushered the creation of multifunctional and reconfigurable photonic integrated circuits (PIC) similar to electronic circuits. PIC provide unparalleled performance in terms of bandwidth, power efficiency, footprint, and cost savings at all levels of the hierarchy, deploying a wealth of photonic integration platforms, spanning from electro-optic boards to silicon photonics, III–V materials, and novel materials.

The possible applications of PIC range from optical communication (including but not limited to free space, 5 and 6G, QKD), microwave photonics, structural health monitoring, optical clocks, optical computers, and emulators to biomedical and agricultural photonics. 

The forecasted market capacity for the PIC in practically all technological areas is expected to exceed USD 1.5 billion by 2023. Some of the key players are Agilent Technologies, Inc. (US), Aifotec AG (Germany), Alcatel-Lucent SA (France), Broadcom Inc. (US), Ciena Corporation (US), CyOptics Inc. (US), EMCORE Corporation (US), Enablence Technologies Inc. (Canada), Finisar Corporation (US), Hewlett-Packard Company (US), Infinera Corporation (US), Intel Corporation (US), JDS Uniphase Corporation (US), Kaiam Corporation (US), and Mellanox Technologies Ltd (US). These players contribute majorly toward market growth. Others (Luxtera Inc. (US), NeoPhotonics Corp (US), Oclaro Inc. (US), OneChip Photonics Inc. (US), TE Connectivity (Switzerland), etc.) contribute nearly 30–35% on the PIC market.

The goal of this Special Issue is to attract contributions from world-leading experts in the area of PIC in an effort to offer an overview of the field with a particular emphasis on major advances and outstanding challenges. The accepted contributions will include visionary works emphasizing state-of-the-art design, technological breakthroughs, experimental verifications, proof-of-concept demonstrations, and industrial applications.

All papers need to present original, previously unpublished work and will be subject to the normal standards and peer-review processes of the journal. Manuscripts must be prepared according to the usual standards for submission to Photonics and uploaded through the MDPI electronic submission system.

Prof. Dr. Franko Küppers
Prof. Dr. Arkadi Shipulin
Prof. Dr. Nicholas Xuanlai Fang
Prof. Dr. Idelfonso Tafur Monroy
Guest Editors

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Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Photonics is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • photonic integrated circuits (PIC)
  • PIC in optical communication
  • PIC in optical computing
  • PIC in microwave photonics
  • PIC in quantum key distribution
  • PIC in quantum computing
  • PIC in structural health monitoring
  • PIC-based neural networks
  • PIC in bio-photonics

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Published Papers (2 papers)

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Research

10 pages, 2128 KiB  
Article
Reduction in DC-Drift in LiNbO3-Based Electro-Optical Modulator
by Aleksei Sosunov, Roman Ponomarev, Anton Zhuravlev, Sergey Mushinsky and Mariana Kuneva
Photonics 2021, 8(12), 571; https://doi.org/10.3390/photonics8120571 - 11 Dec 2021
Cited by 7 | Viewed by 4188
Abstract
This study involves the results of research on short-term and long-term DC-drifts in electro-optical modulators based on annealed proton exchange waveguides in LiNbO3 crystals after wafer pre-annealing. The relaxation time of the DC-drift of the operating point for a short-term drift is [...] Read more.
This study involves the results of research on short-term and long-term DC-drifts in electro-optical modulators based on annealed proton exchange waveguides in LiNbO3 crystals after wafer pre-annealing. The relaxation time of the DC-drift of the operating point for a short-term drift is measured in minutes, and for a long-term drift it is measured in hours and days. DC-drift was measured by applying bias voltage and changing crystal temperature. The obtained results show significant impact on the stability of operating point in EO-modulators after treatment of defective structure of the near-surface layer of a LiNbO3 crystal. Treatment of the disturbed near-surface layer of a LiNbO3 crystal results in the simultaneous reduction in short-term DC-drift and increase in operation stability of electro-optical modulators during long-term measurement of temperature by activation energy calculation. Full article
(This article belongs to the Special Issue Photonic Integration: Technologies and Applications)
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12 pages, 3330 KiB  
Article
Influence of the Surface Roughness of a Silicon Disk Resonator on Its Q-Factor
by Anastasia V. Yakuhina, Alexey S. Kadochkin, Dmitry V. Gorelov, Vyacheslav V. Svetukhin, Sergey S. Generalov and Vladimir V. Amelichev
Photonics 2021, 8(6), 225; https://doi.org/10.3390/photonics8060225 - 17 Jun 2021
Cited by 3 | Viewed by 2584
Abstract
This article presents a silicon disk resonator of the whispering-gallery-mode (WGM) type. The calculated Q-factor of the silicon WGM resonator was 107. Two methods of studying the surface roughness of a silicon WGM resonator with a nonlinear profile by means of [...] Read more.
This article presents a silicon disk resonator of the whispering-gallery-mode (WGM) type. The calculated Q-factor of the silicon WGM resonator was 107. Two methods of studying the surface roughness of a silicon WGM resonator with a nonlinear profile by means of Helios 650 scanning electron microscope and Bruker atomic force microscope (AFM) are presented. The results obtained by the two methods agreed well with each other. A comparison of the surface roughness values of WGM resonators manufactured using different technological approaches is presented. Based on the obtained data, a preliminary estimated Q-factor calculation of the resonators was performed, which was refined by numerical calculation using the finite-difference time-domain (FDTD) method. The effect of the surface roughness of the resonator on its Q-factor was found. Reducing the surface roughness of the resonator from 30 nm to 1–2 nm led to an increase in its Q-factor from 104 to 107. Full article
(This article belongs to the Special Issue Photonic Integration: Technologies and Applications)
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