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Progress in the Development in High-Z and Wide-Bandgap Compound Semiconductor...
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Progress in the Development in High-Z and Wide-Bandgap Compound Semiconductor Radiation Detectors

A special issue of Sensors (ISSN 1424-8220). This special issue belongs to the section "Physical Sensors".

Deadline for manuscript submissions: closed (25 January 2024) | Viewed by 4211

Special Issue Editors

Dr. Leonardo Abbene

E-Mail Website
Guest Editor
Department of Physics and Chemistry, University of Palermo, Viale delle Scienze, Edificio 18, 90128 Palermo, Italy
Interests: X-ray and gamma-ray detectors; CdTe and CdZnTe detectors; digital pulse processing electronics; medical applications; astrophysical applications
Special Issues, Collections and Topics in MDPI journals
Dr. Antonino Buttacavoli

E-Mail Website
Guest Editor
Department of Physics and Chemistry (DiFC)—Emilio Segrè, University of Palermo, Viale Delle Scienze, Edificio 18, 90128 Palermo, Italy
Interests: X-ray and gamma-ray detectors; CdZnTe detectors; spectroscopic X-ray and gamma-ray imaging; pixel detectors; charge sharing; charge losses; drift strip detectors
Dr. Manuele Bettelli

E-Mail Website
Guest Editor
Istituto Materiali per l’Elettronica e il Magnetismo, Consiglio Nazionale delle Ricerche (IMEM/CNR), Parco Area delle Scienze 37/A, 43100 Parma, Italy
Interests: X-ray and gamma-ray detectors; CdZnTe detectors; detector fabrication; simulation of radiation detector; electrical contacts

Special Issue Information

Dear Colleagues,

Recently, high-Z and wide-bandgap compound semiconductor radiation detectors have been widely proposed for X-ray and gamma-ray spectroscopy and imaging, opening interesting perspectives in several application areas such as synchrotron science, homeland security, medical imaging, astrophysics and the food industry. These detectors represent an important class of X-ray and gamma-ray sensors able to perform high-resolution measurements near room-temperature conditions. Several high-Z and wide-bandgap compound semiconductors (CdTe, CdZnTe, CdZnTeSe, GaAs, HgI2, TlBr, perovskite and organic materials) have been developed, and continuous efforts have been made in the advancement of the crystal growth and device fabrication technologies.

In this framework, we are glad to present this Special Issue on “Progress in the Development in High-Z and Wide-Bandgap Compound Semiconductor Radiation Detectors".

This Special Issue aims to receive submissions of both review and original research articles related to the state-of-the-art in high-Z and wide-bandgap compound semiconductor radiation detectors as well as prospects for future developments and applications.

Dr. Leonardo Abbene
Dr. Antonino Buttacavoli
Dr. Manuele Bettelli
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Sensors is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • compound semiconductor radiation detectors
  • room temperature semiconductor detectors
  • X-ray and gamma ray semiconductor detectors
  • CdZnTe detectors
  • CdTe detectors
  • CdZnTeSe detectors
  • GaAs detectors
  • HgI2 detectors
  • TlBr detectors
  • SiC detectors
  • perovskite radiation detectors
  • organic radiation detectors

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Published Papers (2 papers)

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Research

16 pages, 4045 KiB  
Article
A Novel Extraction Procedure of Contact Characteristic Parameters from Current–Voltage Curves in CdZnTe and CdTe Detectors
by Fabio Principato, Manuele Bettelli, Andrea Zappettini and Leonardo Abbene
Sensors 2023, 23(13), 6075; https://doi.org/10.3390/s23136075 - 1 Jul 2023
Cited by 2 | Viewed by 1380
Abstract
The estimation of the characteristic parameters of the electrical contacts in CdZnTe and CdTe detectors is related to the identification of the main transport mechanisms dominating the currents. These investigations are typically approached by modelling the current–voltage (I–V) curves with [...] Read more.
The estimation of the characteristic parameters of the electrical contacts in CdZnTe and CdTe detectors is related to the identification of the main transport mechanisms dominating the currents. These investigations are typically approached by modelling the current–voltage (I–V) curves with the interfacial layer–thermionic-diffusion (ITD) theory, which incorporates the thermionic emission, diffusion and interfacial layer theories into a single theory. The implementation of the ITD model in measured I–V curves is a critical procedure, requiring dedicated simplifications, several best fitting parameters and the identification of the voltage range where each transport mechanism dominates. In this work, we will present a novel method allowing through a simple procedure the estimation of some characteristic parameters of the metal–semiconductor interface in CdZnTe and CdTe detectors. The barrier height and the effects of the interfacial layer will be evaluated through the application of a new function related to the differentiation of the experimental I–V curves. Full article
(This article belongs to the Special Issue Progress in the Development in High-Z and Wide-Bandgap Compound Semiconductor Radiation Detectors)
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34 pages, 4933 KiB  
Article
Demonstrating a Novel, Hidden Source of Spectral Distortion in X-ray Photon Counting Detectors and Assessing Novel Trigger Schemes Proposed to Avoid It
by Oliver L. P. Pickford Scienti and Dimitra G. Darambara
Sensors 2023, 23(9), 4445; https://doi.org/10.3390/s23094445 - 1 May 2023
Viewed by 1828
Abstract
X-ray photon counting spectral imaging (x-CSI) determines a detected photon’s energy by comparing the charge it induces with several thresholds, counting how many times each is crossed (the standard method, STD). This paper is the first to demonstrate that this approach can unexpectedly [...] Read more.
X-ray photon counting spectral imaging (x-CSI) determines a detected photon’s energy by comparing the charge it induces with several thresholds, counting how many times each is crossed (the standard method, STD). This paper is the first to demonstrate that this approach can unexpectedly delete counts from the recorded energy spectrum under some clinically relevant conditions: a process we call negative counting. Four alternative counting schemes are proposed and simulated for a wide range of sensor geometries (pixel pitch 100–600 µm, sensor thickness 1–3 mm), number of thresholds (3, 5, 8, 24 and 130) and medically relevant X-ray fluxes (106–109 photons mm−2 s−1). Spectral efficiency and counting efficiency are calculated for each simulation. Performance gains are explained mechanistically and correlated well with the improved suppression of “negative counting”. The best performing scheme (Shift Register, SR) entirely eliminates negative counting, remaining close to an ideal scheme at fluxes of up to 108 photons mm−2 s−1. At the highest fluxes considered, the deviation from ideal behaviour is reduced by 2/3 in SR compared with STD. The results have significant implications both for generally improving spectral fidelity and as a possible path toward the 109 photons mm−2 s−1 goal in photon-counting CT. Full article
(This article belongs to the Special Issue Progress in the Development in High-Z and Wide-Bandgap Compound Semiconductor Radiation Detectors)
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