Liu, J.-J.; Ho, W.-J.; Chiang, C.-C.; Teng, C.-J.; Yu, C.-C.; Li, Y.-C.
Fabrication and Characterization of Planar-Type Top-Illuminated InP-Based Avalanche Photodetector on Conductive Substrate with Operating Speeds Exceeding 10 Gbps. Sensors 2018, 18, 2800.
https://doi.org/10.3390/s18092800
AMA Style
Liu J-J, Ho W-J, Chiang C-C, Teng C-J, Yu C-C, Li Y-C.
Fabrication and Characterization of Planar-Type Top-Illuminated InP-Based Avalanche Photodetector on Conductive Substrate with Operating Speeds Exceeding 10 Gbps. Sensors. 2018; 18(9):2800.
https://doi.org/10.3390/s18092800
Chicago/Turabian Style
Liu, Jheng-Jie, Wen-Jeng Ho, Cho-Chun Chiang, Chi-Jen Teng, Chia-Chun Yu, and Yen-Chu Li.
2018. "Fabrication and Characterization of Planar-Type Top-Illuminated InP-Based Avalanche Photodetector on Conductive Substrate with Operating Speeds Exceeding 10 Gbps" Sensors 18, no. 9: 2800.
https://doi.org/10.3390/s18092800
APA Style
Liu, J. -J., Ho, W. -J., Chiang, C. -C., Teng, C. -J., Yu, C. -C., & Li, Y. -C.
(2018). Fabrication and Characterization of Planar-Type Top-Illuminated InP-Based Avalanche Photodetector on Conductive Substrate with Operating Speeds Exceeding 10 Gbps. Sensors, 18(9), 2800.
https://doi.org/10.3390/s18092800