Article Versions Notes

Rikan BS, Kim D, Choi K-D, Hejazi A, Yoo J-M, Pu Y, Kim S, Huh H, Jung Y, Lee K-Y. T/R RF Switch with 150 ns Switching Time and over 100 dBc IMD for Wideband Mobile Applications in Thick Oxide SOI Process. Sensors. 2022; 22(2):507. https://doi.org/10.3390/s22020507

Rikan, Behnam S., David Kim, Kyung-Duk Choi, Arash Hejazi, Joon-Mo Yoo, YoungGun Pu, Seokkee Kim, Hyungki Huh, Yeonjae Jung, and Kang-Yoon Lee. 2022. "T/R RF Switch with 150 ns Switching Time and over 100 dBc IMD for Wideband Mobile Applications in Thick Oxide SOI Process" Sensors 22, no. 2: 507. https://doi.org/10.3390/s22020507

Rikan, B. S., Kim, D., Choi, K. -D., Hejazi, A., Yoo, J. -M., Pu, Y., Kim, S., Huh, H., Jung, Y., & Lee, K. -Y. (2022). T/R RF Switch with 150 ns Switching Time and over 100 dBc IMD for Wideband Mobile Applications in Thick Oxide SOI Process. Sensors, 22(2), 507. https://doi.org/10.3390/s22020507