AC “Back to Back” Switching Device in Industrial Application †
Abstract
:1. Introduction
2. An Overview on SCR and Its Application
- ⮚
- an appropriate gate to cathode voltage (VGATE) is needed to turn on the device while the SCR is forward biased;
- ⮚
- gate signal shall be removed after the device under test is turned on in order to reduce the losses and avoid higher junction temperature;
- ⮚
- while the device is in reverse biased conditions, no VGATE signal should be applied;
- ⮚
- when the device is in-off state, negative VGATE should be applied to improve the performance of the under-test device.
- ⮚
- Planar type: Typically used for low current devices because the junctions are obtained by diffusion and come to the same surface on the cathode side. The ratio silicon/ampere is typically high;
- ⮚
- Mesa type: It is used for high current devices but low di/dt ratio. Power SCRs are typically manufactured by this process;
- ⮚
- Press pack type: Widely used in applications where it is necessary to have SCR with center gate and large value of di/dt.
3. Problem Formulation: General and Practical Discussions
3.1. General Discusion
- ⮚
- i(t) is the sum of a regimen term (first term) and a transient one (second term), which depends on time constant τ equal to L/R;
- ⮚
- V is the rms voltage value applied by the voltage source, v(t);
- ⮚
- Z is the load impedance;
- ⮚
- α is the control phase angle evaluated starting from the voltage zero crossing and it can be managed by the gate driver circuit often triggered through a supervisory microcontroller.
3.2. Detail and Practical Discussions
- Supply voltage variation: applied voltage magnitude has linear effect on minimum pulse duration. For standard European voltage of 230 V RMS, this dependency is shown in Figure 8a with ±10% variation around nominal value in compliance with the international standard IEC 50160. It can be noticed that voltage variation has minor effect on minimum pulse time duration;
- Impedance variation:Figure 8b shows the load impedance variation on the minimum pulse time duration with constant φ and V. The variation range is ±50%. An increase in Z means a lower current and a decrease in Z means a higher current. Therefore, it can be seen that, by increasing the load, the minimum pulse time duration required will increase, and with lower load current, wider pulses are required to guarantee the conduction;
- Load power angle variation: with fixed Z and V, effect of load power angle variation has been studied. Figure 8c shows the effect of this variation on minimum pulse duration while the load changes from more resistive to more inductive absorbing the same RMS current. The variation range also in this case is ±50%. It can be seen that increasing the load power angle will cause increase in minimum pulse duration time. More inductive load needs pulses with longer width or in other word, with more resistive load the required pulse width for conduction become shorter;
- Resistance variation:Figure 8d shows the effect of varying load resistance variation on minimum pulse time (t) required, with constants L and V. The variation range also in this case is ±50%. It can be noticed that increasing or decreasing the load resistance does not significantly influence the pulse duration. Therefore, it can be seen from Figure 8d that the variation in resistance doesn’t have a major influence on the required pulse duration;
- Inductance variation:Figure 8e shows the effect of varying load inductance on minimum required pulse time (t), with R and V as constant values. The variation range is once again ±50%. Increasing the load inductance results in lower load current and vice versa. Hence, it can be noticed that by increasing the load inductance the minimum pulse duration needed will also increase. An aspect to note is that the variation in inductance is of very important with respect to the other parameters considered.
4. SCR Driver Circuits, Simulation and Experimental Results
4.1. Driver Circuit 1
4.2. Driver Circuit 2
4.3. Driver Circuit Losses Comparison
4.4. Driver Conduction Delay Comparison
- a
- SCR Driver 1 and
- b
- SCR Driver 2;
- I
- gate pulse,
- II
- series of gate pulses,
- III
- constant gate signal.
5. Conclusions
Author Contributions
Funding
Conflicts of Interest
References
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Device | Manufacturer | IF (A) | VR (V) | IH (A) | IL (A) |
---|---|---|---|---|---|
VSK135 | Vishay | 135 | 1600 | 0.2 | 0.4 |
VSK142 | Vishay | 140 | 1600 | 0.2 | 0.4 |
VSK162 | Vishay | 160 | 1600 | 0.2 | 0.4 |
SKKT132/16 | Semikron | 220 | 1600 | 0.15 | 0.3 |
SKKT162/16 | Semikron | 250 | 1600 | 0.15 | 0.3 |
SK45KQ16 | Semikron | 46 | 1600 | 0.08 (a) | 0.15 (a) |
SK70KQ16 | Semikron | 71 | 1600 | 0.1 (b) | 0.2 (b) |
TN25 | ST | 25 | 1000 | 0.05 (b) | 0.09 (b) |
TN12 | ST | 12 | 1000 | 0.005 (b) | 0.006 (b) |
PO10 | ST | 0.8 | 600 | 0.2 | 0.006 (b) |
α [ms] | Minimum tpulse [μs] | Injection Problem with a tpulse = 200 μs |
---|---|---|
0 | 671 | X |
0.2 | 500 | X |
0.4 | 379 | X |
0.6 | 298 | X |
0.8 | 243 | X |
1 | 204 | X |
2 | 114 | / |
3 | 84 | / |
4 | 72 | / |
5 | 69 | / |
6 | 72 | / |
7 | 86 | / |
8 | 120 | / |
9 | 257 | X |
Ic max (A) | Ic min (A) | Ic ave (A) | VDC (V) | Losses (W) | |
---|---|---|---|---|---|
Driver 1 | 0.658 | 0 | 0.041 | 14.75 | 0.605 |
Driver 2 | 0.031 | 0.031 | 0.031 | 14.75 | 0.457 |
α ms | Reference Value | R = 1.5 Ω +50% | L = 75 mH +50% | Vmin = 207 V −10% | Injection Problem with a tpulse of 200 μs | |||
---|---|---|---|---|---|---|---|---|
Minimum tpulse μs | Minimum tpulse μs | Variation % | Minimum tpulse μs | Variation % | Minimum tpulse μs | Variation % | ||
0 | 628 | 629 | 0.2 | 770 | 22.6 | 663 | 5.6 | X |
0.2 | 460 | 460 | 0.0 | 670 | 45.6 | 492 | 6.9 | X |
0.4 | 345 | 346 | 0.3 | 468 | 35.6 | 375 | 8.7 | X |
0.8 | 219 | 219 | 0.0 | 343 | 56.6 | 241 | 10.0 | X |
1 | 184 | 184 | 0.0 | 266 | 44.6 | 202 | 9.8 | X |
1.2 | 158 | 158 | 0.0 | 231 | 46.2 | 174 | 10.1 | X |
1.4 | 139 | 139 | 0.0 | 204 | 46.7 | 153 | 10.1 | X |
1.6 | 124 | 124 | 0.0 | 183 | 47.6 | 137 | 10.4 | / |
2 | 103 | 103 | 0.0 | 153 | 48.5 | 114 | 10.6 | / |
Voltage THD | |||||
---|---|---|---|---|---|
Power Factor | 1 | 0.8 | 0.6 | 0.4 | Range |
Driver 1 | 1.56–1.99% | 2.04–3.67% | 2.19–3.94% | 2.27–4.04% | 1.56–4.04% |
Voltage THD | |||||
---|---|---|---|---|---|
Power Factor | 1 | 0.8 | 0.6 | 0.4 | Range |
Driver 2 | 1.56% | 2.04% | 2.19% | 2.27% | 1.56–2.27% |
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Faranda, R.; Hafezi, H.; Akkala, K.; Lazzaroni, M. AC “Back to Back” Switching Device in Industrial Application. Energies 2020, 13, 3539. https://doi.org/10.3390/en13143539
Faranda R, Hafezi H, Akkala K, Lazzaroni M. AC “Back to Back” Switching Device in Industrial Application. Energies. 2020; 13(14):3539. https://doi.org/10.3390/en13143539
Chicago/Turabian StyleFaranda, Roberto, Hossein Hafezi, Kishore Akkala, and Massimo Lazzaroni. 2020. "AC “Back to Back” Switching Device in Industrial Application" Energies 13, no. 14: 3539. https://doi.org/10.3390/en13143539
APA StyleFaranda, R., Hafezi, H., Akkala, K., & Lazzaroni, M. (2020). AC “Back to Back” Switching Device in Industrial Application. Energies, 13(14), 3539. https://doi.org/10.3390/en13143539