Escoffier, R.; Mohamad, B.; Buckley, J.; Gwoziecki, R.; Biscarrat, J.; Sousa, V.; Orsatelli, M.; Marcault, E.; Ranc, J.; Modica, R.;
et al. Analytic Model of Threshold Voltage (VTH) Recovery in Fully Recessed Gate MOS-Channel HEMT (High Electron Mobility Transistor) after OFF-State Drain Stress. Energies 2022, 15, 677.
https://doi.org/10.3390/en15030677
AMA Style
Escoffier R, Mohamad B, Buckley J, Gwoziecki R, Biscarrat J, Sousa V, Orsatelli M, Marcault E, Ranc J, Modica R,
et al. Analytic Model of Threshold Voltage (VTH) Recovery in Fully Recessed Gate MOS-Channel HEMT (High Electron Mobility Transistor) after OFF-State Drain Stress. Energies. 2022; 15(3):677.
https://doi.org/10.3390/en15030677
Chicago/Turabian Style
Escoffier, René, Blend Mohamad, Julien Buckley, Romain Gwoziecki, Jérome Biscarrat, Véronique Sousa, Marc Orsatelli, Emmanuel Marcault, Julien Ranc, Roberto Modica,
and et al. 2022. "Analytic Model of Threshold Voltage (VTH) Recovery in Fully Recessed Gate MOS-Channel HEMT (High Electron Mobility Transistor) after OFF-State Drain Stress" Energies 15, no. 3: 677.
https://doi.org/10.3390/en15030677
APA Style
Escoffier, R., Mohamad, B., Buckley, J., Gwoziecki, R., Biscarrat, J., Sousa, V., Orsatelli, M., Marcault, E., Ranc, J., Modica, R., & Iucolano, F.
(2022). Analytic Model of Threshold Voltage (VTH) Recovery in Fully Recessed Gate MOS-Channel HEMT (High Electron Mobility Transistor) after OFF-State Drain Stress. Energies, 15(3), 677.
https://doi.org/10.3390/en15030677
